TSM3N80CIC0 VBSEMI | Alldatasheet

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Technical content

FEATURES

  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • Isolated Central Mounting Hole
  • F a s t S w i t c h i n g
  • E ase of Paralleling
  • Simple Drive Requirements
  • Compliant to RoHS Directive 2002/95/EC Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 Ω, IAS = 7.8 A (see fig. 12). c. I SD ≤ 7.8 A, dI/dt ≤ 140 A/μs, VDD ≤ 600 V, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 850 RDS(on) (Ω)V GS = 10 V 2. Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration Single Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 850 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID ATC = 100 °C 3.9 Pulsed Drain Currenta IDM 24 Linear Derating Factor 1.5 W/°C Single Pulse Avalanche Energyb EAS 770 mJ Repetitive Avalanche Currenta IAR 7.8 A Repetitive Avalanche Energya EAR 19 mJ Maximum Power Dissipation TC = 25 °C PD 45 W Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

  • Pb containing terminations are not RoHS compliant, exemptions may apply S N-Channel MOSFET G D G D S TO-220 FULLPAK Top View Power MOSFET 5.5 TSM3N80CI C0 服务热线：400-655-8788 www.VBsemi.com A ll data sheet.com

a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -4 0 °C/WCase-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0 .65 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 850 VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA -0 . 9 8- V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 850 V, VGS = 0 V - - μA VDS = 680 V, VGS = 0 V, TJ = 125 °C - - Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 3.7 Ab Ω Forward Transconductance gfs VDS = 100 V, ID = 3.7 Ab - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - - pFOutput Capacitance Coss - - Reverse Transfer Capacitance Crss - - Total Gate Charge Qg VGS = 10 V ID = 3.8 A, VDS = 400 V, see fig. 6 and 13b - - 28 nC Gate-Source Charge Qgs -- 5 Gate-Drain Charge Qgd - - 12 Turn-On Delay Time td(on) VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD= 52 Ω see fig. 10b - - ns Rise Time tr - - Turn-Off Delay Time td(off) - - Fall Time tf - - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -5 . 0- nH Internal Source Inductance L S -1 3- Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral reverse p - n junction diode -- 5 . 0 A Pulsed Diode Forward Currenta ISM -- 2 1 Body Diode Voltage VSD TJ = 25 °C, IS = 3.8 A, VGS = 0 Vb -- 1 . 8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 3.8 A, dI/dt = 100 A/μsb - ns Body Diode Reverse Recovery Charge Q rr - μ C Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G 2.40 816 4.5 320 3.3 - - V TSM3N80CI C0 服务热线：400-655-8788 www.VBsemi.com A ll data sheet.com

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Te mperature 91114_01 Bottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 25 °C 4.5 V VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) 100 101 101 100 10-1 10-2 10-2 10-1 102 101 100 10-1 100 101 VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) Bottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 150 °C 91114_02 4.5 V 10-2 10-2 10-1 102 20 µs Pulse Width VDS = 100 V 101 100 10-1 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 5678 9 1 04 25 °C 150 °C 91114_03 ID = 4 A VGS = 10 V3.0 0.0 0.5 1.0 1.5 2.0 2.5 TJ, Junction Temperature (°C) RDS(on), Drain-to-Source On Resistance (Normalized) 91114_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 3.5 TSM3N80CI C0 服务热线：400-655-8788 www.VBsemi.com A ll data sheet.com

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig . 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 2400 2000 1600 1200 400 800 100 101 Capacitance (pF) VDS, Drain-to-Source Voltage (V) Ciss Crss Coss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 91114_05 QG, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) 0 8 40322416 VDS = 180 V VDS = 240 V For test circuit see figure 13 VDS = 300 V 91114_06 ID = 3.2 A 101 100 VSD, Source-to-Drain Voltage (V) ISD, Reverse Drain Current (A) 25 °C 150 °C VGS = 0 V 91114_07 10 µs 100 µs 1 ms 10 ms Operation in this area limited by RDS(on) VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) TC = 25 °C TJ = 150 °C Single Pulse10-2 103 0.1 0.1 25 102 25 103 25 104 91114_08 102 TSM3N80CI C0 服务热线：400-655-8788 www.VBsemi.com A ll data sheet.com

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximu m Effective Transient Thermal Impedance, Junction-to-Case ID, Drain Current (A) TC, Case Temperature (°C) 0.0 3.0 4.0 5.0 6.0 7.0 25 1501251007550 91114_09 1.0 2.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS Rg D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 0.1 10-2 10-5 10-4 10-3 10-2 0.1 1 10 PDM t1, Rectangular Pulse Duration (s) Thermal Response (ZthJC) Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 0 − 0.5 0.2 0.1 0.05 0.02 0.01 91114_11 TSM3N80CI C0 服务热线：400-655-8788 www.VBsemi.com A ll data sheet.com

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Wavef orms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit RG IAS 0.01 Ωtp D.U.T L VDS - VDD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. TSM3N80CI C0 服务热线：400-655-8788 www.VBsemi.com A ll data sheet.com

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD TSM3N80CI C0 服务热线：400-655-8788 www.VBsemi.com A ll data sheet.com

TO-220 FULLPAK (HIGH VOLTAGE) Notes 1. To be used only for process drawing. 2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet C pk > 1.33. 4. All dimensions include bur rs and plating thickness. 5. No chipping or package damage. E b n L e Ø P D c u V A MILLIMETERS INCHES A 4.570 4.830 0.180 0.190 A1 2.570 2.830 0.101 0.111 A2 2.510 2.850 0.099 0.112 b 0.622 0.890 0.024 0.035 b2 1.229 1.400 0.048 0.055 b3 1.229 1.400 0.048 0.055 c 0.440 0.629 0.017 0.025 D 8.650 9.800 0.341 0.386 d1 15.88 16.120 0.622 0.635 d3 12.300 12.920 0.484 0.509 E 10.360 10.630 0.408 0.419 e 2.54 BSC 0.100 BSC L 13.200 13.730 0.520 0.541 L1 3.100 3.500 0.122 0.138 n 6.050 6.150 0.238 0.242 Ø P 3.050 3.450 0.120 0.136 u 2.40 0 2.500 0.094 0.098 v 0.400 0.500 0.016 0.020 ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 TSM3N80CI C0 服务热线：400-655-8788 www.VBsemi.com A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. TSM3N80CI C0 服务热线：400-655-8788 www.VBsemi.com A ll data sheet.com