TS3310

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FEATURES

 Ultra-Efficient Boost Converter: Active Mode, No-load Supply Current: 150nA Efficiency: Up to 92% Input Voltage Range: 0.9V-5V Delivers up to 35mA at 3V STORE from 1.2VIN Single-inductor, Discontinuous Conduction Mode Operation No External Schottky Diode Required  Pin-Selectable Output Voltages: 4.1V, and 5V  User-enabled Secondary Output Load Switch  10-Pin, Low-Profile, 2mm x 2mm TDFN Package

APPLICATIONS

Coin Cell-Powered Portable Equipment Single Cell Li-ion or Alkaline Powered Equipment Solar or Mechanical Energy Harvesting Wireless Microphones Wireless Remote Sensors RFID Tags Blood Glucose Meters Personal Health-Monitoring Devices ZigBee Radio Enabled Devices Low-Energy Bluetooth Radio Enabled Devices

DESCRIPTION

The TS3310 is a low power boost switching regulator with an industry leading low quiescent current of 150nA. The 150nA is the actual current consumed from the battery while the output is in regulation. The TS3310’s extremely low power internal circuitry consumes 90nA on average, with periodic switching cycles which service the load occurring at intervals of up to 25 seconds, together yielding the average 150nA. The TS3310 steps up input voltages from 0.9V to 5V to eight selectable output voltages ranging from 1.8V to 5V. The TS3310 includes two output options, one being an always-on storage output while the additional output is an out put load switch that is designed to supply burst-on loads in a low duty cycle manner. The TS3310 operat es in Discontinuous Conduction Mode with an on-time proportional to 1/V IN, thereby limiting the maximum input current by the selection of the inductor value, ensuring the input current does not drag down the input source. The extremely low quiescent current combined with the output load switch make the TS3310 an ideal choice for applications where the load can be periodically powered from the output, while being disconnected from the output storage capacitor when the load is powered off to isolate the load’s leakage current. The TS3310 is fully specified over the -40°C to +85°C temperature range and is available in a low-profile, thermally-enhanced 10-pin 2x2mm TDFN package with an exposed back-side paddle. Efficiency vs STORE Current IN=1.2V, STORE=3V 0.0001 0.001 0.01 0.1 1 10 100 ISTORE - mA 100 EFFICIENCY - % Circuit A Circuit B A True 150-nA IQ, 0.9-5VIN, Selectable 1.8-5VOUT Instant-OnTM Boost Converter TYPICAL APPLICATION CIRCUIT Circuit A Circuit B L 10µH PN: CBC3225T100KR 100µH PN: CBC3225T101KR CIN = CSTORE 22 µF 2.2 µF CLSW 220pF ---

Page 2 TS3310 Rev. 1.1 ABSOLUTE MAXIMUM RATINGS Continuous Power Dissipation (T A = +70°C) 10-Pin TDFN22EP (Derate at 13.48mW/°C above +70°C) 1078mW Electrical and thermal stresses beyond thos e listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to any absolute maximum rating condi tions for extended periods may affect device reliability and lifetime. PACKAGE/ORDERING INFORMATION ORDER NUMBER PART MARKING CARRIER QUANTITY TS3310ITD1022 3310 TAPE & REEL ----- TS3310ITD1022T TAPE & REEL 3000 Lead-free Program: Silicon Labs supplies only lead-free packaging. Consult Silicon Labs for products specified with wider operating temperature ranges.

TS3310 Rev. 1.1 Page 3

ELECTRICAL CHARACTERISTICS

VIN=1.2V, VOUT_ON=VIN, VPROG is the programmed voltage according to S2, S1, S0 pins set for STORE voltage of 3V unless otherwise specified. TA=-40°C to 85°C. Typical values are at TA=+25°C unless otherwise specified. Please see Note 1. PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Voltage Range V IN 0.9 5 V Under Voltage Lock Out UVLO 0.855 0.9 V Hysteresis 20 mV STORE Voltage V STORE ISTORE=50% of ISTORE(MAX), 0.9V<VIN<3.6V, at any VPROG>VIN. TA=+25°C. See Note 2. 0.97 x VPROG VPROG 1.03 x VPROG V VPROG Tempco 0.027 % / °C No-Load Input Current, IQ I-Floor @ IN. See Note 3. 90 180 nA @ STORE. See Note 3. 30 Active-Mode @ IN. See Note 4. 150 Boost Switch On-Time T ON V IN=1.8V 0.8 x 2/V IN 2/V IN 1.2 x 2/V IN µsec On Resistance NMOS RON NMOS VSTORE=1.8V 0.8 1.3 Ω PMOS RON PMOS 1.1 1.65 LOAD SWITCH RON LOAD SWITCH 1.1 1.65 NMOS RON NMOS VSTORE=3V 500 mΩ PMOS RON PMOS 650 LOAD SWITCH RON LOAD SWITCH 650 VSTORE GOOD VVGOOD % of target STORE voltage 80 90 95 Hysteresis 5 VOUT_ON Input Voltage VOUT_ON L Low CMOS Logic Level 0.2 V VOUT_ON H High CMOS Logic Level 0.6 S0, S1, S2 Input Voltage S0L, S1L, S2L Low CMOS Logic Level 0.2 V S0H, S1H, S2H High CMOS Logic Level 0.6 S0, S1, S2, OUT_ON Input Leakage Current 5 nA Note 1: All devices are 100% production tested at TA = +25°C and are guaranteed by characterization for TA = -40°C to +85°C, as specified. Note 2: ISTORE(MAX) is provided as the Maximum Average STORE Current by the graph entitled “Expected Maximum STORE Output Current” in the TS3310 Applications Section. Note 3: VSTORE output is driven above regulation point. No switching is occurring. Note 4: VSTORE=3V. L=100µH. CSTORE=1µF.

Page 4 TS3310 Rev. 1.1 Efficiency vs STORE Output Current IN=2.4V, STORE=3V 100 EFFICIENCY - % 0.0001 0.001 0.01 0.1 1 10 100 ISTORE - mA TYPICAL PERFORMANCE CHARACTERISTICS Efficiency vs STORE Output Current IN=1.2V, STORE=3V 0.0001 0.001 0.01 0.1 1 10 100 ISTORE - mA 100 EFFICIENCY - % Efficiency vs STORE Output Current IN=1.2V, STORE=1.8V 0.0001 0.001 0.01 0.1 1 10 100 ISTORE - mA 100 EFFICIENCY - % Efficiency vs STORE Output Current IN=2V, STORE=5V 0.0001 0.001 0.01 0.1 1 10 100 ISTORE - mA 100 EFFICIENCY - % Circuit A Circuit BCircuit A Circuit B Circuit A Circuit B Circuit A Circuit B VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise specified. Circuit A Circuit B L 10µH PN: CBC3225T100KR 100µH PN: CBC3225T101KR CIN=CSTORE 22 µF 2.2 µF CLSW 220pF ---

TS3310 Rev. 1.1 Page 5 Active-Mode IQ vs Input Voltage with No Load : Circuit A (STORE=1.8V) Input Voltage - V Active-Mode IQ - nA 800 640 480 160 320 Active-Mode IQ vs Input Voltage with No Load : Circuit B (STORE=1.8V) Input Voltage - V Active-Mode IQ - nA 800 640 480 160 320 Efficiency vs STORE Output Current IN=3V, STORE=5V 0.0001 0.001 0.01 0.1 1 10 100 ISTORE - mA 100 EFFICIENCY - % TYPICAL PERFORMANCE CHARACTERISTICS +25°C -40°C +85°C +25°C -40°C +85°C VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise specified. Circuit B Circuit A Circuit A Circuit B L 10µH PN: CBC3225T100KR 100µH PN: CBC3225T101KR CIN=CSTORE 22 µF 2.2 µF CLSW 220pF ---

Page 6 TS3310 Rev. 1.1 Active-Mode IQ vs Input Voltage with No Load : Circuit B (STORE=3V) Input Voltage - V Active-Mode IQ - nA 800 640 480 160 320 Active-Mode IQ vs Input Voltage with No Load : Circuit A (STORE=3V) Input Voltage - V Active-Mode IQ - nA 800 640 480 160 320 Active-Mode IQ vs Input Voltage with No Load : Circuit A (STORE=5V) Input Voltage - V Active-Mode IQ - nA 800 640 480 160 320 Active-Mode IQ vs Input Voltage with No Load : Circuit B (STORE=5V) Input Voltage - V Active-Mode IQ - nA 800 640 480 160 320 TYPICAL PERFORMANCE CHARACTERISTICS +25°C -40°C +85°C +25°C -40°C +85°C +85°C -40°C +25°C VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise specified. +85°C -40°C +25°C Circuit A Circuit B L 10µH PN: CBC3225T100KR 100µH PN: CBC3225T101KR CIN=CSTORE 22 µF 2.2 µF CLSW 220pF ---

TS3310 Rev. 1.1 Page 7 TYPICAL PERFORMANCE CHARACTERISTICS Minimum Start-Up Voltage vs STORE Output Current Circuit A with 10Ω Source Resistance (STORE=1.8V) ISTORE - mA 0.001 0.01 0.1 1 10 100 Source Voltage - V 1.50 1.25 1.00 0.75 0.50 Minimum Start-Up Voltage vs STORE Output Current Circuit A with 10Ω Source Resistance (STORE=3V) ISTORE - mA 0.001 0.01 0.1 1 10 100 Source Voltage - V 2.00 1.75 1.50 1.25 0.50 0.75 1.00 Minimum Start-Up Voltage vs STORE Output Current Circuit B with 10Ω Source Resistance (STORE=1.8V) Source Voltage - V 1.50 1.30 1.10 0.90 0.70 ISTORE - mA 0.001 0.01 0.1 1 10 Minimum Start-Up Voltage vs STORE Output Current Circuit B with 10Ω Source Resistance (STORE=3V) Source Voltage - V 1.50 1.30 1.10 0.90 0.70 ISTORE - mA 0.001 0.01 0.1 1 10 +85°C +25°C -40°C +25°C -40°C +85°C +85°C +85°C +25°C -40°C -40°C +25°C VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise specified. Circuit A Circuit B L 10µH PN: CBC3225T100KR 100µH PN: CBC3225T101KR CIN=CSTORE 22 µF 2.2 µF CLSW 220pF ---

Page 8 TS3310 Rev. 1.1 Minimum Start-Up Voltage vs Source Resistance : VSTORE=3V Source Voltage - V 2.0 1.5 1.0 0.5 Source Resistance - kΩ 0 5 10 15 20 Minimum Start-Up Voltage vs Source Resistance : VSTORE=1.8V Source Voltage - V 2.0 1.5 1.0 0.5 Source Resistance - kΩ 0 5 10 15 20 TYPICAL PERFORMANCE CHARACTERISTICS Circuit B Circuit A Circuit A Circuit B Minimum Start-Up Voltage vs STORE Output Current Circuit A with 10Ω Source Resistance (STORE=5V) ISTORE - mA 0.001 0.01 0.1 1 10 100 Source Voltage - V 3.6 3.0 2.7 2.4 1.5 1.8 2.1 3.3 Minimum Start-Up Voltage vs STORE Output Current Circuit B with 10Ω Source Resistance (STORE=5V) Source Voltage - V 3.0 2.5 2.0 1.5 ISTORE - mA 0.001 0.01 0.1 1 10 -40°C -40°C +25°C +25°C +85°C VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise specified. +85°C Circuit A Circuit B L 10µH PN: CBC3225T100KR 100µH PN: CBC3225T101KR CIN=CSTORE 22 µF 2.2 µF CLSW 220pF ---

TS3310 Rev. 1.1 Page 9 TYPICAL PERFORMANCE CHARACTERISTICS Maximum STORE Output Current vs Input Voltage w/ VSTORE ≥ 96% of Target Voltage : Circuit B STORE Output Current - mA Input Voltage - V Maximum STORE Output Current vs Input Voltage w/ VSTORE ≥ 96% of Target Voltage : Circuit A Input Voltage - V STORE Output Current - mA STORE=5.0V STORE=3.0V STORE=1.8V STORE=1.8V STORE=3.0V STORE=5.0V VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise specified. IFLOOR 90nA IPEAK 80mA/DIV Active-Mode IQ : Circuit A with No-Load VIN=3V, STORE=3V IPEAK 50mA/DIV IFLOOR 90nA Active-Mode IQ : Circuit A with No-Load VIN=1.2V, STORE=3V 5 s/DIV 10 s/DIV Circuit A Circuit B L 10µH PN: CBC3225T100KR 100µH PN: CBC3225T101KR CIN=CSTORE 22 µF 2.2 µF CLSW 220pF ---

Page 10 TS3310 Rev. 1.1 TYPICAL PERFORMANCE CHARACTERISTICS VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise specified. LSW 1V/DIV STORE 50mV/DIV IL 100mA/DIV STORE Output Voltage Ripple, Inductor Current, and LSW Voltage : Circuit A VIN=1.2V, STORE=3V, ISTORE=10mA LSW 2V/DIV STORE 100mV/DIV ISTORE 30mA/DIV IL 200mA/DIV STORE Load Step Response : Circuit A VIN=1.2V, STORE=3V, ISTORE=24mA LSW 2V/DIV STORE 100mV/DIV ISTORE 3.33mA/DIV IL 20mA/DIV STORE Load Step Response : Circuit B VIN=1.2V, STORE=3V, ISTORE=3mA LSW 5V/DIV STORE 20mV/DIV IL 100mA/DIV STORE Output Voltage Ripple, Inductor Current, and LSW Voltage : Circuit A VIN=1.2V, STORE=3V, ISTORE(MAX)=35mA Circuit A Circuit B L 10µH PN: CBC3225T100KR 100µH PN: CBC3225T101KR CIN=CSTORE 22 µF 2.2 µF CLSW 220pF ---

TS3310 Rev. 1.1 Page 11 TYPICAL PERFORMANCE CHARACTERISTICS VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise specified. LSW 5V/DIV STORE 5V/DIV VIN 2V/DIV IL 100mA/DIV Startup : Circuit A with RIN=10Ω VIN=2V, STORE=5V, ISTORE=10mA LSW 1V/DIV STORE 1V/DIV VIN 1V/DIV IL 200mA/DIV Startup : Circuit A with RIN=10Ω VIN=1.2V, STORE=1.8V, ISTORE=10mA LSW 1V/DIV STORE 1V/DIV VIN 1V/DIV IL 200mA/DIV Startup : Circuit A with RIN=10Ω VIN=0.9V, STORE=1.8V, ISTORE=0.18µA LSW 2V/DIV STORE 5V/DIV VIN 2V/DIV IL 100mA/DIV Startup : Circuit A with RIN=10Ω VIN=2V, STORE=5V, ISTORE=0.5µA Circuit A Circuit B L 10µH PN: CBC3225T100KR 100µH PN: CBC3225T101KR CIN=CSTORE 22 µF 2.2 µF CLSW 220pF ---

Page 12 TS3310 Rev. 1.1 TYPICAL PERFORMANCE CHARACTERISTICS VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise specified. OUT_ON 2V/DIV STORE 200mV/DIV IFLOOR 120nA OUT 2V/DIV OUT_ON Switched OFF : Circuit A with COUT Removed VIN=1.2V, STORE=3V, ISTORE=0.3µA, IOUT=3mA LSW 2V/DIV STORE 2V/DIV STORE Switch to GND IL 100mA/DIV Short STORE to GND for 1msec Recovery : Circuit A VIN=1.2V, STORE=3V, ISTORE=9mA OUT_ON 2V/DIV STORE 200mV/DIV IFLOOR 120nA OUT 2V/DIV OUT_ON Switched ON : Circuit A with COUT Removed VIN=1.2V, STORE=3V, ISTORE=0.3µA, IOUT=3mA Circuit A Circuit B L 10µH PN: CBC3225T100KR 100µH PN: CBC3225T101KR CIN=CSTORE 22 µF 2.2 µF CLSW 220pF ---

TS3310 Rev. 1.1 Page 13 PIN FUNCTIONS PIN NAME FUNCTION 1 OUT_ON Logic Input. Turns on OUT switch. 2 S0 Logic Input. Sets the regulated voltage at STORE. 3 IN Boost Input. Connect to input source. Connect Input capacitor, C IN. 4 S1 Logic Input. Sets the regulated voltage at STORE. 5 S2 Logic Input. Sets the regulated voltage at STORE. 6 VGOOD Open Drain Output. High impedance when STORE>90% of regulation voltage. 7 GND Ground. Connect this pin to the analog ground plane. 8 LSW Inductor Connection. If using an inductor value ≤22µH, please see Table 3 for recommended CLSW values. 9 STORE Regulated output voltage set by S0, S1, S2 logic. Connect Storage capacitor, CSTORE. 10 OUT Switched Output. Exposed Paddle EP For best electrical and thermal performance, connect exposed backside paddle to analog ground plane. BLOCK DIAGRAM

comparator causes switching periods to stop. cycles have completed, the PMOS switch turns off. the time between switching cycles is decreased. voltage can be one of 8 selectable output voltages. from the storage capacitor at the STORE output. Table 1. STORE Output Voltage Options

some inductor manufacturers. CLSW with a minimum voltage rating of 50V. capacitors, use a 10V or greater voltage rating. Table 5. Murata Example Inductors Table 4. Taiyo-Yuden Example Inductors Table 3. Recommended CLSW Values Table 2. Inductor Manufacturers Figure 4. Inductor Peak Current vs Inductor Value

Silicon Laboratories, Inc. Page 18 400 West Cesar Chavez, Austin, TX 78701 TS3310 Rev. 1.1 +1 (512) 416-8500 ▪ www.silabs.com Dimensions Min Nom Max A 0.700 0.750 0.800 A1 0.000 --- 0.050 b 0.150 0.200 0.250 A3 0.203 REF D 2.000 BSC e 0.400 BSC E 2.000 BSC D2 0.850 0.900 0.950 E2 1.350 1.400 1.450 L 0.250 0.300 0.350 aaa 0.500 bbb 0.100 ccc 0.050 ddd 0.050 eee 0.080 fff 0.050 Notes: 1. All dimensions shown are in millimeters (mm) unless otherwise noted. 2. Dimensioning and Tolerancing per ANSI Y14.5M-1994. 3. Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components. PACKAGE OUTLINE DRAWING

Page 19 TS3310 Rev. 1.1 Document Change List Revision 1.0 to Revision 1.1  Top mark changed from AAW to 3310.  Package outline drawing updated (dimens ions unchanged, but pins look slightly different in side view).  Input voltage range increas ed to from 3.6 V to 5 V  C STORE and CIN values increased 2.2x in recommended application circuit A (to 22 µF from 10 µF) and circuit B (to 2.2 µF from 1 µF)

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