TLP621-X

TLP621-X SYC | Alldatasheet

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TLP621,TLP621−2,TLP621−4 TOSHIBA Photocoupler GaAs Ired & Photo −Transistor Programmable Controller AC / DC−Input Module Solid State Relay The TOSHIBA TLP621, −2 and −4 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP621−2 offers two isolated channels in an eight lead plastic DIP , which the TLP621−4 provides four isolated channels in a sixteen plastic DIP. /Gb7/G20Collector−emitter voltage: 55 V (min.) /Gb7/G20Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Pin Configurations (top view) TLP621 TLP621-2 TLP621-4 1 1 1 2 2 2 4 4 3 3 8 9 1: Anode 2: Cathode 3: Emitter 4: Collecto r 1, 3: Anode 2, 4: Cathode 5, 7: Emitter 6, 8: Collector 1, 3, 5, 7: Anode 2, 4, 6, 8: Cathode 9, 11, 13, 15: Emitter 10, 12, 14, 16: Collector TOSHIBA 11 −5B2 Weight: 0.26 g TOSHIBA 11 −10C4 Weight: 0.54 g TOSHIBA 11 −20A3 Weight: 1.1 g Unit in mm

TLP621,TLP621−2,TLP621−4

• Current Transfer Ratio Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°CType Classi/G2d/G20 fication Min. Max. Marking Of Classification (None) 50 600 Blank, Y, Y ■, G, G■, B, B■, GB Rank Y 50 150 Y, Y ■ Rank GR 100 300 G, G ■ Rank BL 200 600 B, B ■ TLP621 Rank GB 100 600 G, G ■, B, B■, GB (None) 50 600 Blank, GR, BL, GB TLP621/G2d2 TLP621/G2d4 Rank GB 100 600 GR, BL, GB *1: Ex. rank GB: TLP621 (GB) (Note) Application type name for certification test, please use standard product type name, i.e. TLP621 (GB): TLP621 TLP621/G2d2 (GB): TLP621/G2d2 Made In Japan Made In Thailand UL recognized E67349 *2 E152349 *2 BSI approved 6508, 7445 *3 6505, 7445 *3 SEMKO approved 9735090 / 01 *4 ― *2 UL1577 *3 BS EN60065: 1994, BS EN60950: 1992 *4 EN60950 (approved is TLP621 only)

TLP621,TLP621−2,TLP621−4 /Gb7/G20Option (D4) type VDE approved: DIN VDE0884 / 06.92, certificate no. 68384 Maximum operating insulation voltage: 890 VPK Highest permissible over voltage: 8000 VPK (Note) When a VIDE0884 approved type is needed, please disignate the “Option (D4)” 7.62 mm pich 10.16 mm pich standard type (LF2) type /Gb7/G20Creepage distance : 6.4 mm (min.) 8.0 mm (min) Clearance : 6.4 mm (min.) 8.0 mm (min) Insulation thickness : 0.4 mm (min.) 0.4 mm (min)

TLP621,TLP621−2,TLP621−4 Maximum Ratings (Ta = 25°C) Rating Characteritic Symbol TLP621 TLP621/G2d2 TLP621/G2d4 Unit Forward current I F 60 50 mA Forward current derating ∆IF /°C /G2d0.7 (Ta > 39°C) /G2d0.5 (Ta = 25°C) mA /°C Pulse forward current I FP 1 (100µs pulse, 100pps) A Power dissipation P D 100 70 mW Power dissipation derating ∆PD /°C /G2d1.0 /G2d0.7 mW /°C Reverse voltage V R 5 V LED Junction temperature T j 125 °C Collector/G2demitter voltage V CEO 55 V Emitter/G2dcollector valtage V ECO 7 V Collector current I C 50 mA Collector power dissipation (1 circuit) PC 150 100 mW Collector power dissipation derating (1 circuit, Ta ≥ 25°C) ∆PC /°C /G2d1.5 /G2d1.0 mW /°C Detector Junction temperature T j 125 °C Storage temperature range T stg /G2d55~125 °C Operating temperature range T opr /G2d55~100 °C Lead soldering temperature T sol 260 (10 s) °C Total package power dissipation P T 250 150 mW Total package power dissipation derating (Ta ≥ 25°C) ∆PT /°C /G2d2.5 /G2d1.5 mW /°C Isolation voltage (Note 1) BV S 5000 (AC, 1min., R.H. ≤ 60%) Vrms (Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage V CC ―/G20 5 24 V Forward current I F ― 16 20 mA Collector current I C ―/G20 1 10 mA Operating temperature T opr /G2d25 ―/G20 85 °C

TLP621,TLP621−2,TLP621−4 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F I F = 10 mA 1.0 1.15 1.3 V Reverse current I R V R = 5 V — — 10 µA LED Capacitance C T V = 0, f = 1 MHz — 30 — pF Collector/G2demitter breakdown voltage V(BR) CEO IC = 0.5 mA 55 — — V Emitter/G2dcollector breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 24 V — 10 100 nA Collector dark current I CEO VCE = 24 V, Ta = 85°C — 2 50 µA Detector Capacitance (collector to emitter) CCE V = 0, f = 1 MHz — 10 — pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn. Typ. Max. Unit 50 — 600 Current transfer ratio I C / IF IF = 5 mA, VCE = 5 V Rank GB 100 — 600 — 60 — Saturated CTR I C / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB 30 — — IC = 2.4 mA, IF = 8 mA — — 0.4 — 0.2 — Collector/G2demitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB — — 0.4 V Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance (input to output) C S VS = 0, f = 1 MHz — 0.8 — pF Isolation resistance R S VS = 500 V 1×10 12 1014 — Ω AC, 1 minute 5000 — — AC, 1 second, in oil — 10000 — Vrms Isolation voltage BV S DC, 1 minute, in oil — 10000 — V dc

TLP621,TLP621−2,TLP621−4 Switching Characteristics (Ta = 25°C) Characterictic Symbol Test Condition Min. Typ. Max. Unit Rise time t r — 2 — Fall time t f — 3 — Turn/G2don time t on — 3 — Turn/G2doff time t off VCC = 10 V, IC = 2 mA RL = 100Ω — 3 — µs Turn/G2don time t ON — 2 — Storage time t S — 15 — Turn/G2doff time t OFF RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = 16 mA — 25 — µs Fig. 1 Switching time test circuit IF RL VCC VCE VCE tON IF tOFF VCC 4.5V 0.5V tS

TLP621,TLP621−2,TLP621−4 TLP621 I F – Ta Ambient temperature Ta (°C) Allowable forward current IF ( m A ) -20 0 20 40 60 80 100 100 120 TLP621-2 TLP621-4 I F – Ta Ambient temperature Ta (°C) Allowable forward current IF (mA) 100 -20 0 20 40 60 80 100 120 TLP621 P C – Ta Ambient temperature Ta (°C) Allowable collector power dissipation P C (mW) 240 -20 160 0 60 100 120 200 120 20 40 80 TLP621-2 TLP621-4 P C – Ta Ambient temperature Ta (°C) Allowable collector power dissipation P C (mW) 120 -20 0 40 100 20 60 80 100 120 TLP621 I FP – DR Duty cycle ratio DR Pulse forward current I FP (mA) 3000 3 10-3 10-2 10 -1 3 300 100 1000 500 3 3 100 Pulse width ≤ 100µs Ta = 25°C TLP621-2 TLP621-4 I FP – DR Duty cycle ratio DR Pulse forward current I FP (mA) 3000 1000 500 300 100 3 10-3 3 10-2 3 100 Pulse width ≤ 100µs Ta = 25°C 10-1 3

TLP621,TLP621−2,TLP621−4 ∆VF / ∆Ta – IF Forward current I F (mA) Forward voltage temperature coefficent ∆VF / ∆Ta (mV /°C) -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 0.3 31 0 30 ID – Ta Ambient temperature T a (°C) Dark current I D (µA) 0 40 80 120 160 101 100 10-1 10-2 10-3 10-4 VCE = 24V 10V I F – VF Forward voltage V F (V) Forward current I F (mA) 100 0.1 0.5 0.3 Ta = 25°C I FP – VFP Pulse forward voltage V FP (V) Pulse forward current I FP (mA) 1000 500 300 100 2.4 Pulse width ≤ 10µs Repetitive Frequency = 100Hz Ta = 25°C IC – VCE Collector-emitter voltage V CE (V) Collector current I C (mA) 0 2 4 861 0 50mA 30mA 20mA 15mA 10mA IF = 5mA PC (MAX.) Ta = 25°C IC – VCE Collector-emitter voltage V CE (V) Collector current I C (mA) 50mA 40mA 30mA 20mA 10mA 5mA IF = 2mA 5 Ta = 25°C

TLP621,TLP621−2,TLP621−4 IC / IF – IF Foward current I F (mA) Current transfer ratio I C / IF (%) 500 300 100 0.3 13 10 30 100 Ta = 25°C VCE = 5V VCE = 0.4V Sample B Sample A VCE (sat) – Ta Ambient temperature T a (°C) Collector-emitter saturation Voltage V CE (sat) (V) -20 0 20 40 60 80 100 0.20 0.16 0.12 0.08 0.04 IF = 5mA IC = 1mA Switchingtime – RL Load resistance R L ( k Ω) Switching time (µs) 1000 500 300 100 1 3 10 30 100 300 Ta = 25°C IF = 16mA VCC = 5V tOFF ts tON IC – IF Forward current I F (mA) Collector current I C (mA) 100 0.5 0.3 1 3 10 30 100 Sample A Sample B 0.3 0.1 0.05 0.03 Ta = 25°C VCE = 5V VCE = 0.4V IC – Ta Ambient temperature T a (°C) Collector current I C (mA) 100 -20 0 20 40 80 100 25mA 10mA 5mA 1mA IF = 0.5mA 0.5 0.3 0.1 VCE = 5V