TLN233 TOREX | Alldatasheet

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TOSHIBA Infrared LED GaA ℓAs Infrared Emitter TLN233 Infrared LED for Space-Optical-Transmission /Gb7/G20High radiant intensity: 80 mW/sr (typ.) at I F = 50 mA /Gb7/G20Half-angle value: θ1/2 = ±13° (typ.) /Gb7/G20A light source for remote control /Gb7/G20Wireless AV-signal transmission purpose /Gb7/G20High speed data transmission purpose Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Forward current I F 100 mA Pulse forward current I FP 1000 (Note 1) mA Power dissipation P D 200 mW Reverse voltage V R 4 V Operating temperature range T opr /G2d25~85 °C Storage temperature range T stg /G2d30~100 °C Soldering temperature (5 s), (Note 2) T sol 260 °C Note 1: f /G3d 100 kHz, duty /G3d 1% Note 2: Soldering must be performed under the stopper. Unit: mm JEDEC ― JEITA ― TOSHIBA 4-5V3 Pin Connection 12 1. Anode 2. Cathode

Optical and Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V F I F /G3d 100 mA /Gbe 1.6 2.0 V Reverse current I R V R /G3d 4 V/G20/Gbe /Gbe 60 /G6dA Radiant intensity I E I F /G3d 50 mA 46 80 /Gbe mW/sr Radiant power P O I F /G3d 50 mA /Gbe 30 /Gbe mW Cut-off frequency f c I F /G3d 50 mA /G2b 5 mAP-P (Note 3) /Gbe 15 /Gbe MHz Peak emission wavelength /G6cP I F /G3d 50 mA /Gbe 870 /Gbe nm Half-angle value /G712

1 IF /G3d 50 mA /Gbe /Gb113 /Gbe °

Note 3: Frequency when modulation light power decreases by 3dB from 1 MHz. Handling Precautions /Gb7/G20Soldering must be performed under the stopper. /Gb7/G20When forming the leads, bend each lead under the 5 mm of package body. Soldering must be performed after the leads have been formed. /Gb7/G20The radiant intensity decrease over time due to current flowing in the infrared LED. When designing circuits, the device must take into account the change in radiant intensity over time. The change in radiant intensity is equal to the reciprocal of the change in LED infrared optical output. P (0) o P (t) o I (0) E I (t) E /G3d

Allowable pulse forward current I FP (mA) Pulse forward current I FP (mA) Ambient temperature Ta (°C) IF – Ta Allowable forward current I F ( m A ) Forward voltage V F (V) I F – VF (typ.) Forward current I F (mA) Ambient temperature Ta (°C) V F – Ta (typ.) Forward voltage V F (V) Pulse forward voltage V FP (V) I FP – VFP (typ.) Pulse width P w ( /G6ds) IFP – Pw Pulse forward current I FP (mA) Relative IE – IFP Relative radiant intensity 0 20 40 60 80 100 100 120 0.01 0.1 100 /G2d25°C 0°C Ta /G3d 25°C 50°C 75°C 85°C /G2d50 /G2d25 0 25 50 75 100 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 IF /G3d 10 mA 30 mA 50 mA 70 mA 100 mA 0 1 2 3 4 5 100 1000 300 Pulse width /G3c/G3d100 /G6ds Repetitive frequency /G3d 100 Hz Ta /G3d 25°C 1 10 100 1000 10000 100 1000 10000 300 3000 Ta /G3d 25°C f /G3d 100 Hz 200 Hz 500 Hz 1 kHz 2 kHz 5 kHz 10 kHz 0 200 400 600 800 1000 1200 0.2 0.4 0.6 0.8 1.0 1.2 Pulse width /G3d 1 ms Duty /G3d 10% Ta /G3d 25°C

90° 90/Gb0 30/Gb0 60/Gb0 0 1.0 80/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb0 10/Gb0 70/Gb0 50/Gb0 40/Gb0 20/Gb010/Gb0 0.80.6 0.4 0.2 Relative radiant power Ta /G3d 25°C 80/Gb0 Wavelength /G6c (nm) Wavelength characteristic Relative power intensity Ambient temperature Ta (°C) Relative I E – Ta (typ.) Relative radiant intensity Radiation pattern (typ.) 700 740 780 820 860 900 940 980 0.2 0.4 0.6 0.8 IF /G3d 50 mA 0.1 /G2d50 /G2d25 0 25 50 75 100 0.3 IF /G3d 50 mA

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EACRESTRICTIONS ON PRODUCT USE