TF12N50 VBSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

FEATURES

  • O p t i m al D e s i g n - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses High Body Diode Ruggedness - Avalanche Energy Rated (UIS)
  • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching

APPLICATIONS

  • Consumer Electronics - Displays (L CD or Plasma TV)
  • Server and Telecom Power Supplies - SMPS
  • Industrial - Welding - Induction Heating - Motor Drives
  • Battery Chargers
  • S M P S - Power Factor Correction (PFC) Notes a. Repetitive rating; pulse width limite d by maximum junction temperature. b. V DD = 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = 7.5 A. c. 1.6 mm from cas d. I SD  ID, starting TJ = 25 °C. PRODUCT SUMMARY VDS (V) 550 RDS(on) max. at 25 °C ()V GS = 10 V 0.30 Qg max. (nC) 150 Qgs (nC) 12 Qgd (nC) 25 Configuration Sing le N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless othe rwise noted) PARAMETER SYMBOL LIMIT UNIT Drain- Source Voltage VDS 550 V Gate-Source Vo ltage VGS ± 20 Gate-Source V oltage AC (f > 1 Hz) 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C ID ATC = 100 °C 11 Pulsed Drain Curr enta IDM 56 Linear Derating Factor 2.2 W/°C S ingle Pulse Avalanche Energyb EAS 281 mJ Maximum Power D issipation PD 60 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Drain-Sourc e Voltage Slope TJ = 125 °C dV/dt 24 V/nsReverse Diode dV/d td 0.36 Soldering Reco mmendations (Peak Temperature) for 10 s 300c °C Power MOSFET G D S TO-220 FULLPAK Top View E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TF12N50 A ll data sheet.com

a. C oss(er) is a fixed capac itance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS. b. C oss(tr) is a fixed capa citance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER S YMBOL TYP . MAX. UNIT Maximum Junction-to-Ambient RthJA -4 0 °C/WMaximum Juncti on-to-Case (Drain) RthJC -0 .45 SPECIFICATIONS (TJ = 25 °C, u nless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 550 - - V VDS Temperature C oefficient VDS/TJ Reference to 25 °C, ID = 250 μA -0 . 5 6- V/°C Ga te-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate- Source Leakage IGSS V GS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 1 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 10 Dra in-Source On-State Resistance RDS(on) V GS = 10 V ID = 10 A - - 0.30  Forward Transconduc tance gfs VDS = 50 V, ID = 10 A - 12 - S Dynamic Input Capacitance C iss VGS = 0 V, VDS = 100 V, f = 1 MHz - 3094 - pF Output Capacitance Coss - 152 - Reverse Tr ansfer Capacitance Crss -1 3- Effective o utput capacitance, energy relateda Co(er) VGS = 0 V, VDS = 0 V to 400 V - 131 - Effective o utput capacitance, time relatedb Co(tr) - 189 - Total Gate Charge Qg VGS = 10 V I D = 10 A, VDS = 400 V - 80 150 nC Gate-Source C harge Qgs - Gate-Drain Charge Qgd - Turn-On Dela y Time td(on) VDD = 400 V, ID = 10 A, VGS = 10 V, Rg = 9.1  -2 4 5 0 nsRise Time tr -3 1 6 2 Turn-Off Delay Time td(off) - 117 176 Fall Time tf - 56 112 Gate Input Resistance Rg f = 1 MHz, open drain - 1.8 -  Drain-Source Bo dy Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integr al reverse p - n junction diode -- 2 0 A Pulsed Diode Forward Current ISM -- 80 Diode For ward Voltage VSD TJ = 25 °C, IS = 10 A, VGS = 0 V - - 1.2 V Reverse Recovery Time trr TJ = 25 °C, IF = IS = 10 A, dI/dt = 100 A/μs, VR = 20 V - 437 - ns Reverse Re covery Charge Qrr -5 . 9- μ C Reve rse Recovery Current IRRM -2 5-A S D G 12 - 25 - E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TF12N50 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output C haracteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 11 V VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) 0 5 10 15 20 25 30 TJ = 25 °C TOP 15 V 14 V 13 V 12 V 11 V 10 V 9 V 8 V 7 V 6 V BOTTOM 5 V 11 V VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) 0 5 10 15 20 25 30 TJ = 150 °C TOP 15 V 14 V 13 V 12 V 11 V 10 V 9 V 8 V 7 V 6 V BOTTOM 5 V VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) 0 5 10 15 20 25 TJ = 25 °C TJ = 150 °C TJ, Junction Temperature (°C) RDS(on), Drain-to-Source - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 On Resistance (Normalized) 0.5 1.5 2.5 VGS = 10 V ID = 10 A ġ ġ ġ ġ ġ VDS, Drain-to-Source Voltage (V) Capacitance (pF) Ciss Coss Crss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 100 1000 0 100 200 300 400 500 10 000 Qg, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) 03 0 6 0 9 0 120 150 180 VDS = 400 V VDS = 250 V VDS = 100 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TF12N50 A ll data sheet.com

Fig. 7 - Typi cal Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10 - Temperature vs. Drain-to-Source Voltage Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case 0.1 100 VSD, Source-Drain Voltage (V) ISD, Reverse Drain Current (A) 1.6 ġ ġ ġVGS = 0 V TJ = 25 °C TJ = 150 °C VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) 0.1 100 1000 1 10 100 1000 * VGS > minimum VGS at which RDS(on) is specified Operation in this area limited by RDS(on) BVDSS Limited TC = 25 °C TJ = 150 °C Single Pulse 100 μs 1 ms 10 ms Limited by RDS(on)* TJ, Case Temperature (°C) ID, Drain Current (A) 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain-to-Source - 60 0 160 Brakdown Voltage (V) - 40 - 20 20 40 60 80 100 120 140 475 500 525 550 575 600 625 0.01 0.1 0.0001 0.001 0.01 0.1 1 Normalized Effective Transient Thermal Impedance Pulse Time (s) Duty Cycle = 0.5 0.2 0.1 0.02 0.05 Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TF12N50 A ll data sheet.com

Fig. 12 - Switc hing Time Test Circuit Fig. 13 - Switching Time Waveforms Fig. 14 - Unclamped Inductive Test Circuit Fig. 15 - Unclamped Inductive Waveforms Fig. 16 - Basic Gate Charge Waveform Fig. 17 - Gate Charge Test Circuit Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf RG IAS 0.01 Ωtp D.U.T L VDS - VDD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TF12N50 A ll data sheet.com

Fig. 18 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer R g Note a. VGS = 5 V for logic level devices VDD E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TF12N50 A ll data sheet.com

TO-220 FULLPAK (HIGH VOLTAGE) Notes 1. To be used only for process drawing. 2. These dime ns ions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet C pk > 1.33. 4. All dimensions include bur rs and plating thickness. 5. N o chipping or package da mage. E b n L e Ø P D c u V A MILLIMETERS INCHES A 4.570 4.83 0 0.180 0.190 A1 2.570 2.830 0.101 0.111 A2 2.510 2.850 0.099 0.112 b 0.622 0.890 0.024 0.035 b2 1.229 1.400 0.048 0.055 b3 1.229 1.400 0.048 0.055 c 0.440 0.629 0.017 0.025 D 8.650 9.800 0.341 0.386 d1 15.88 16.120 0.622 0.635 d3 12.300 12.920 0.484 0.509 E 10.360 10.630 0.408 0.419 e 2.54 BSC 0.100 BSC L 13.200 13.730 0.520 0.541 L1 3.100 3.500 0.122 0.138 n 6.050 6.150 0.238 0.242 Ø P 3.050 3.450 0.120 0.136 u 2.400 2.500 0.094 0.098 v 0.400 0.500 0.016 0.020 ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TF12N50 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TF12N50 A ll data sheet.com