TCST2103 SYC | Alldatasheet
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Technical content
Transmissive Optical Sensor with Phototransistor Output TCST2103, TCST2202, TCST2300
DESCRIPTION
The TCST2103, TCST2202, and TCST2300 are transmissive sensors that incl ude an infrared emitter and phototransistor, located face-to-face on the optical axes in a leaded package which blocks visible light. These part numbers include options for aperture width.
FEATURES
- Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 24.5 x 6.3 x 10.8 Gap (in mm): 3.1 Typical output current under test: I C = 4 mA (TCST2103) Typical output cu rrent under test: IC = 2 mA (TCST2202) Typical output current under test: IC = 0.5 mA (TCST2300) Daylight blocking filter Emitter wavelength: 950 nm Lead (Pb)-free soldering released Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
APPLICATIONS
Optical switch Photo interrupter Counter Encoder Note (1) Conditions like in table basic characteristics/coupler 19180_3 Top view D 7.6 mm 0.3" 19180_1 PRODUCT SUMMARY PART NUMBER GAP WIDTH (mm) APERTURE WIDTH (mm) TYPICAL OUTPUT CURRENT UNDER TEST (1) (mA) DAYLIGHT BLOCKING FILTER INTEGRATED TCST2103 3.1 1 4 Yes TCST2202 3.1 0.5 2 Yes TCST2300 3.1 0.25 0.5 Yes
TCST2103, TCST2202, TCST2300 Transmissive Optical Sensor with Phototransistor Output Note (1) Tamb = 25 °C, unless otherwise specified ABSOLUTE MAXIMUM RATINGS Fig. 1 - Power Dissipation Limit vs. Ambient Temperature ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Total power dissipation T amb ≤ 25 °C P tot 250 mW Ambient temperature range T amb - 55 to + 85 °C Storage temperature range T stg - 55 to + 100 °C Soldering temperature Distance to package: 2 mm; t ≤ 5 s T sd 260 °C INPUT (EMITTER) Reverse voltage V R 6V Forward current I F 60 mA Forward surge current t p ≤ 10 µs I FSM 3A Power dissipation T amb ≤ 25 °C P V 100 mW Junction temperature T j 100 °C OUTPUT (DETECTOR) Collector emitter voltage V CEO 70 V Emitter collector voltage V ECO 7V Collector peak current t p/T = 0.5, tp ≤ 10 ms I CM 200 mA Power dissipation T amb ≤ 25 °C P V 150 mW Junction temperature T j 100 °C 100 200 300 400 95 11088 P - Power Dissipation (mW) T amb - Ambient Tem p erature Coupled device Phototransistor IR-diode 150 120 90 60 30
TCST2103, TCST2202, TCST2300 Transmissive Optical Sensor with Phototransistor Output Note (1) Tamb = 25 °C, unless otherwise specified Fig. 2 - Test Circuit for ton and toff Fig. 3 - Switching Times BASIC CHARACTERISTICS (1) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT COUPLER Current transfer ratio V CE = 5 V, IF = 20 mA TCST2103 CTR 10 20 % TCST2202 CTR 5 10 % TCST2300 CTR 1.25 2.5 % Collector current V CE = 5 V, IF = 20 mA TCST2103 I C 24 m A TCST2202 I C 12 m A TCST2300 I C 0.25 0.5 mA Collector emitter saturation voltage IF = 20 mA, IC = 1 mA TCST2103 V CEsat 0.4 V IF = 20 mA, IC = 0.5 mA TCST2202 V CEsat 0.4 V IF = 20 mA, IC = 0.1 mA TCST2300 V CEsat 0.4 V Resolution, path of the shutter crossing the radiant sensitive zone I Crel = 10 % to 90 % TCST2103 s 0.6 mm TCST2202 s 0.4 mm TCST2300 s 0.2 mm INPUT (EMITTER) Forward voltage I F = 60 mA V F 1.25 1.6 V Junction capacitance V R = 0 V, f = 1 MHz C j 50 pF OUTPUT (DETECTOR) Collector emitter voltage I C = 1 mA V CEO 70 V Emitter collector voltage I E = 10 µA V ECO 7V Collector dark current V CE = 25 V, IF = 0 A, E = 0 lx I CEO 100 nA SWITCHING CHARACTERISTICS Turn-on time IC = 2 mA, VS = 5 V, RL = 100 Ω (see figure 2) ton 10 µs Turn-off time IC = 2 mA, VS = 5 V, RL = 100 Ω (see figure 2) toff 8µ s Channel I Channel II 20688 + 5 V IC adjusted by IF IF IF RG = 50 Ω tp tp = 1 ms T = 20 Oscilloscope 50 Ω 100 Ω R L ≥ 1 MΩ CL ≤ 20 pF t p t t 10 % 90 % 100 % tr td ton ts tf toff IF IC tp Pulse duration td Delay time tr Rise time ton (= td + tr) T urn-on time ts Storage time t f Fall time toff (= ts + tf)T urn-off time 96 11698
TCST2103, TCST2202, TCST2300 Transmissive Optical Sensor with Phototransistor Output BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 4 - Forward Current vs. Forward Voltage Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature Fig. 6 - Collector Dark Current vs. Ambient Temperature Fig. 7 - Collector Current vs. Forward Current Fig. 8 - Collector Current vs. Collector Emitter Voltage Fig. 9 - Current Transfer Ratio vs. Forward Current 0.1 100 1000 VF - Forward Voltage (V)96 11862 IF - Forward Current (mA) - 25 0.5 1.0 1.5 2.0 CTR - Relative Current Transfer Ratiorel T amb - Ambient Temperature (°C) 95 11089 V CE = 5 V I F = 20 mA 10075 50 25 0 100 1000 10 000 I - Collector Dark C urrent (nA)CEO T amb - Ambient Temperature (°C) 95 11090 V CE = 25 V I F = 0 A 100755025 0.001 0.01 0.1 0.1 I F - Forward Current (mA) 96 12066 VCE = 5 V I - Collector C urrent (mA) C 10010 1 0.01 0.1 0.1 V CE - Collector Emitter Voltage (V)96 12067 I - Collector Current (mA) C 20 mA 10 mA 5 mA 2 mA 1 mA I F = 50 mA 10010 1 0.1 100 0.1 I F - Forward Current (mA) 96 12068 V CE = 5 V CTR - Current Transfer Ratio (%) 10010 1
TCST2103, TCST2202, TCST2300 Transmissive Optical Sensor with Phototransistor Output Fig. 10 - Turn-off/Turn-on Time vs. Collector Current Fig. 11 - Relative Collector Current vs. Displacement Fig. 12 - Relative Collector Current vs. Displacement Fig. 13 - Relative Collector Current vs. Displacement I C - Collector Current mA 95 11086 t t - T urn on Turn off Time (µs) off on Non saturated operation V S = 5 V R L = 100 Ω t on t off 108642 100 110 - 0.5 s - Displacement (mm) 96 12005 I - Relati ve Collector CurrentCrel s A = 1 mm 96 12006 s A = 0.5 mm 100 110 - 0.5 s - Dis p lacement mm I - Relative Collector CurrentCrel 96 12007 s A = 0.25 mm 100 110 - 0.5 s - Displacement (mm) I - Relati ve Collector CurrentCrel
TCST2103, TCST2202, TCST2300 Transmissive Optical Sensor with Phototransistor Output PACKAGE DIMENSIONS in millimeters TUBE DIMENSIONS in millimeters 96 12095 Drawing-No.: 6.550-5040.01-4 Issue: 2; 10.11.98 20252