TCST1103

TCST1103 SYC | Alldatasheet

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Technical content

Rev. 1.9, 17-Aug-09 1 Transmissive Optical Sensor with Phototransistor Output TCST1103, TCST1202, TCST1300 Vishay Semiconductors

DESCRIPTION

The TCST1103, TCST1202, and TCST1300 are transmissive sensors that incl ude an infrared emitter and phototransistor, located face-to-face on the optical axes in a leaded package which blocks visible light. These part numbers include options for aperture width.

FEATURES

• Package type: leaded  Detector type: phototransistor  Dimensions (L x W x H in mm): 11.9 x 6.3 x 10.8  Gap (in mm): 3.1  Typical output current under test: I C = 4 mA (TCST1103)  Typical output cu rrent under test: IC = 2 mA (TCST1202)  Typical output current under test: IC = 0.5 mA (TCST1300)  Daylight blocking filter  Emitter wavelength: 950 nm  Lead (Pb)-free soldering released  Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

APPLICATIONS

 Optical switch  Photo interrupter  Counter  Encoder Note (1) Conditions like in table basic characteristics/coupler Note (1) MOQ: minimum order quantity 19180_5 19180_3 Top view D 7.6 mm 0.3" PRODUCT SUMMARY PART NUMBER GAP WIDTH (mm) APERTURE WIDTH (mm) TYPICAL OUTPUT CURRENT UNDER TEST (1) (mA) DAYLIGHT BLOCKING FILTER INTEGRATED TCST1103 3.1 1 4 Yes TCST1202 3.1 0.5 2 Yes TCST1300 3.1 0.25 0.5 Yes

ORDERING INFORMATION

VOLUME (1) REMARKS TCST1103 Tube MOQ: 1020 pcs, 85 pcs/tube Without mounting flange TCST1202 Tube MOQ: 1020 pcs, 85 pcs/tube Without mounting flange TCST1300 Tube MOQ: 1020 pcs, 85 pcs/tube Without mounting flange ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Total power dissipation T amb ≤ 25 °C P tot 250 mW Ambient temperature range T amb - 55 to + 85 °C Storage temperature range T stg - 55 to + 100 °C Soldering temperature Distance to package: 2 mm; t ≤ 5 s T sd 260 °C www.sycelectronica.com.ar

Document Number: 83764 2 Rev. 1.9, 17-Aug-09 TCST1103, TCST1202, TCST1300 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output Note (1) Tamb = 25 °C, unless otherwise specified ABSOLUTE MAXIMUM RATINGS Fig. 1 - Power Dissipation Limit vs. Ambient Temperature INPUT (EMITTER) Reverse voltage V R 6V Forward current I F 60 mA Forward surge current t p ≤ 10 µs I FSM 3A Power dissipation T amb ≤ 25 °C P V 100 mW Junction temperature T j 100 °C OUTPUT (DETECTOR) Collector emitter voltage V CEO 70 V Emitter collector voltage V ECO 7V Collector peak current t p/T = 0.5, tp ≤ 10 ms I CM 200 mA Power dissipation T amb ≤ 25 °C P V 150 mW Junction temperature T j 100 °C ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT 100 200 300 400 95 11088 P - Power Dissipation (mW) T amb - Ambient Tem p erature Coupled device Phototransistor IR-diode 150 120 90 60 30 BASIC CHARACTERISTICS (1) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT COUPLER Current transfer ratio V CE = 5 V, IF = 20 mA TCST1103 CTR 10 20 % TCST1202 CTR 5 10 % TCST1300 CTR 1.25 2.5 % Collector current V CE = 5 V, IF = 20 mA TCST1103 I C 24 m A TCST1202 I C 12 m A TCST1300 I C 0.25 0.5 mA Collector emitter saturation voltage IF = 20 mA, IC = 1 mA TCST1103 V CEsat 0.4 V IF = 20 mA, IC = 0.5 mA TCST1202 V CEsat 0.4 V IF = 20 mA, IC = 0.1 mA TCST1300 V CEsat 0.4 V Resolution, path of the shutter crossing the radiant sensitive zone I Crel = 10 % to 90 % TCST1103 s 0.6 mm TCST1202 s 0.4 mm TCST1300 s 0.2 mm www.sycelectronica.com.ar

Rev. 1.9, 17-Aug-09 3 TCST1103, TCST1202, TCST1300 Transmissive Optical Sensor with Phototransistor Output Vishay Semiconductors Note (1) Tamb = 25 °C, unless otherwise specified Fig. 2 - Test Circuit for ton and toff Fig. 3 - Switching Times BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 4 - Forward Current vs. Forward Voltage Fig. 5 - Re lative Current Transfer Ratio vs. Ambient Temperature INPUT (EMITTER) Forward voltage I F = 60 mA V F 1.25 1.6 V Junction capacitance V R = 0 V, f = 1 MHz C j 50 pF OUTPUT (DETECTOR) Collector emitter voltage I C = 1 mA V CEO 70 V Emitter collector voltage I E = 10 µA V ECO 7V Collector dark current V CE = 25 V, IF = 0 A, E = 0 lx I CEO 100 nA SWITCHING CHARACTERISTICS Turn-on time IC = 2 mA, VS = 5 V, RL = 100 Ω (see figure 2) ton 10 µs Turn-off time IC = 2 mA, VS = 5 V, RL = 100 Ω (see figure 2) toff 8µ s BASIC CHARACTERISTICS (1) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Channel I Channel II 20688 + 5 V IC adjusted by IF IF IF RG = 50 Ω tp tp = 1 ms T = 20 Oscilloscope 50 Ω 100 Ω R L ≥ 1 MΩ CL ≤ 20 pF t p t t 10 % 90 % 100 % tr td ton ts tf toff IF IC tp Pulse duration td Delay time tr Rise time ton (= td + tr) T urn-on time ts Storage time t f Fall time toff (= ts + tf)T urn-off time 96 11698 0.1 100 1000 VF - Forward Voltage (V)96 11862 IF - Forward Current (mA) - 25 0.5 1.0 1.5 2.0 CTR - Relative Current Transfer Ratiorel T amb - Ambient Temperature (°C) 95 11089 V CE = 5 V I F = 20 mA 10075 50 25 0 www.sycelectronica.com.ar

4 Rev. 1.9, 17-Aug-09 TCST1103, TCST1202, TCST1300 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output Fig. 6 - Collector Dark Current vs. Ambient Temperature Fig. 7 - Collector Current vs. Forward Current Fig. 8 - Collector Current vs. Collector Emitter Voltage Fig. 9 - Current Transfer Ratio vs. Forward Current Fig. 10 - Turn-off/Turn-on Time vs. Collector Current Fig. 11 - Relative Collector Current vs. Displacement 100 1000 10 000 I - Collector Dark C urrent (nA)CEO T amb - Ambient Temperature (°C) 95 11090 V CE = 25 V I F = 0 A 100755025 0.001 0.01 0.1 0.1 I F - Forward Current (mA) 96 12066 VCE = 5 V I - Collector C urrent (mA) C 10010 1 0.01 0.1 0.1 V CE - Collector Emitter Voltage (V)96 12067 I - Collector Current (mA) C 20 mA 10 mA 5 mA 2 mA 1 mA I F = 50 mA 10010 1 0.1 100 0.1 I F - Forward Current (mA) 96 12068 V CE = 5 V CTR - Current Transfer Ratio (%) 10010 1 I C - Collector Current (mA) 95 11086 t t - T urn on Turn off Time (µs) off on Non saturated operation V S = 5 V R L = 100 Ω t on t off 108642 100 110 - 0.5 s - Displacement (mm) 96 12005 I - Relati ve Collector CurrentCrel s A = 1 mm www.sycelectronica.com.ar

Rev. 1.9, 17-Aug-09 5 TCST1103, TCST1202, TCST1300 Transmissive Optical Sensor with Phototransistor Output Vishay Semiconductors Fig. 12 - Relative Collector Current vs. Displacement Fig. 13 - Relative Collector Current vs. Displacement PACKAGE DIMENSIONS in millimeters 96 12006 s A = 0.5 mm 100 110 - 0.5 s - Dis p lacement mm I - Relative Collector CurrentCrel 96 12007 s A = 0.25 mm 100 110 - 0.5 s - Displacement (mm) I - Relati ve Collector CurrentCrel 96 12094 Drawing-No.: 6.550-5039.01-4 Issue: 2; 10.11.98 www.sycelectronica.com.ar

6 Rev. 1.9, 17-Aug-09 TCST1103, TCST1202, TCST1300 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output TUBE DIMENSIONS in millimeters 20252 www.sycelectronica.com.ar

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