BTA16 SUNTAC | Alldatasheet
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Available either in through-hole or surface-mount packages, the BTA/BTB16 and T16 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ... The snubberless versions (BTA/BTB...W and T16 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734). Symbol Value Unit IT(RMS) 16 A VDRM/VRRM 600, 700 and 800 V IGT (Q1) 10 to 50 mA ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) D2²PA K Tc = 100°C A TO-220AB TO-220AB Ins. Tc = 85°C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 60 Hz t = 16.7 ms 168 A F = 50 Hz t = 20 ms 160 I ²tI ²t Value for fusing tp = 10 ms 144 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°C VDRM/VRRM + 100 V IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C G GA2 G TO-220AB (BTB16) TO-220AB Insulated (BTA16) D2PAK (T16-G) G BTA/BTB16 series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) ■ STANDARD (4 Quadrants) STATIC CHARACTERISTICS Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Symbol Test Conditions Quadrant T16 BTA/BTB16 Unit T1635 SW CW BW IGT (1) VD = 12 V RL = 33 Ω I - II - III MAX. 35 10 35 50 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III MIN. 0.2 V IH (2) IT = 500 mA M A X . 3 51 53 55 0 m A IL IG = 1.2 IGT I - III MAX. 50 25 50 70 mA II 60 30 60 80 dV/dt (2) V D = 67 % VDRM gate open Tj = 125°C MIN. 500 40 500 1000 V/µs (dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. - 8.5 - - A/ms (dV/dt)c = 10 V/µs Tj = 125°C - 3.0 - - Without snubber Tj = 125°C 8.5 - 8.5 14 Symbol Test Conditions Quadrant BTA/BTB16 Unit CB IGT (1) VD = 12 V RL = 33 Ω I - II - III IV MAX. 25 100 mA VGT ALL MAX. 1.3 V VGD VD = VDRM R L = 3.3 kΩ Tj = 125°C ALL MIN. 0.2 V IH (2) IT = 500 mA MAX. 25 50 mA IL IG = 1.2 IGT I - III - IV MAX. 40 60 mA II 80 120 dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C MIN. 200 400 V/µs (dV/dt)c(2) (dI/dt)c = 7 A/ms Tj = 125°C MIN. 5 10 V/µs Symbol Test Conditions Value Unit VTM (2) I TM = 22.5 A tp = 380 µs Tj = 25°C MAX. 1.55 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 25 m Ω IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µ A Tj = 125°C 2 mA BTA/BTB16 series
Note: xxx = voltage, y = sensitivity, z = type Part Number Marking Weight Base quantity Packing mode BTA/BTB16-xxxyz BTA/BTB16xxxyz 2.3 g 250 Bulk BTA/BTB16-xxxyzRG BTA/BTB16-xxxyz 2.3 g 50 Tube T1635-xxxG T1635xxxG 1.5 g 50 Tube T1635-xxxG-TR T1635xxxG 1.5 g 1000 T ape & reel Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2-1: RMS on-state current versus case temperature (full cycle). Fig. 2-2: D²PAK RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35 µm), full cycle. Fig. 3: Relative variation of thermal impedance versus pulse duration. 02468 1 0 1 2 1 4 1 60 IT(RMS) (A) P (W) 0 25 50 75 100 1250 Tc(°C) IT(RMS) (A) BTA BTB/T16 0 25 50 75 100 1250.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Tamb(°C) IT(RMS) (A) D PAK (S=1cm ) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+21E-2 1E-1 1E+0 tp (s) K=[Zth/Rth] Zth(j-c) Zth(j-a) BTA/BTB16 series
Fig. 4: On-state characteristics (maximum values) Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. 100 200 VTM (V) ITM (A) Tj=25°C Tj max Tj max: Vto = 0.85 V Rd = 25 mΩ 1 10 100 10000 100 120 140 160 180 Number of cycles ITSM (A) Non repetitive Tj initial=25°C Repetitive Tc=85°C One cycle t=20ms 0.01 0.10 1.00 10.00100 1000 3000 tp (ms) ITSM (A), I²t (A²s) Tj initial=25°C ITSM I²t dI/dt limitation: 50A/µs -40 -20 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 Tj(°C) IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] IGT IH & IL 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dV/dt)c (V/µs) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c BW/CW/T1635 C B SW 0 25 50 75 100 1250 Tj (°C) (dI/dt)c [Tj] / (dI/dt)c [Tj specified] BTA/BTB16 series