BTA12 SUNTAC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
® B S MAIN FEATURES:
DESCRIPTION
Available either in through-hole or surface-mount packages, the BTA/BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless versions (BTA/BTB...W and T12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface directly with low power drivers such as microcontrollers. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734) Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 and 800 V IGT (Q1) 5 to 50 mA ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) D²PAK/TO-220AB Tc = 105°C 12 A TO-220AB Ins. Tc = 90°C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 120 A F = 60 Hz t = 16.7 ms 126 I²tI ²t Value for fusing tp = 10 ms 78 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°C V DRM/VRRM + 100 V IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C G G A2A1 G D2PAK (T12-G) GA2 TO-220AB Insulated (BTA12) TO-220AB BTA/BTB12 series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) ■ STANDARD (4 Quadrants) STATIC CHARACTERISTICS Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Symbol Test Conditions Quadrant T12 BTA/BTB12 Unit T1235 TW SW CW BW IGT (1) VD = 12 V RL = 30 Ω I - II - III MAX. 35 5 10 35 50 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III MIN. 0.2 V IH (2) IT = 100 mA M A X . 3 51 01 53 55 0m A IL IG = 1.2 IGT I - III MAX. 50 10 25 50 70 mA II 60 15 30 60 80 dV/dt (2) V D = 67 %VDRM gate open Tj = 125°C MIN. 500 20 40 500 1000 V/µs (dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. - 3.5 6.5 - - A/ms (dV/dt)c = 10 V/µs Tj = 125°C - 1 2.9 - - Without snubber Tj = 125°C 6.5 - - 6.5 12 Symbol Test Conditions Quadrant BTA/BTB12 Unit CB IGT (1) VD = 12 V RL = 30 Ω I - II - III IV MAX. 25 100 mA VGT ALL MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C ALL MIN. 0.2 V IH (2) IT = 500 mA MAX. 25 50 mA IL IG = 1.2 IGT I - III - IV MAX. 40 50 mA II 80 100 dV/dt (2) V D = 67 %VDRM gate open Tj = 125°C MIN. 200 400 V/µs (dV/dt)c (2) (dI/dt)c = 5.3 A/ms Tj = 125°C MIN. 5 10 V/µs Symbol Test Conditions Value Unit VT (2) I TM = 17 A tp = 380 µs Tj = 25°C MAX. 1.55 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 35 m Ω IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µ A Tj = 125°C 1 mA BTA/BTB12 series
Note: xxx = voltage, yy = sensitivity, z = type Part Number Marking Weight Base quantity Packing mode BTA/BTB12-xxxyz BTA/BTB12-xxxyz 2.3 g 250 Bulk BTA/BTB12-xxxyzRG BTA/BTB12-xxxyz 2.3 g 50 Tube T1235-xxxG T1235xxxG 1.5 g 50 Tube T1235-xxxG-TR T1235xxxG 1.5 g 1000 Tape & reel Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2-1: RMS on-state current versus case temperature (full cycle). Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm),full cycle. Fig. 3: Relative variation of thermal impedance versus pulse duration. 0123456789 1 0 1 1 1 20 P (W) IT(RMS)(A) 0 25 50 75 100 1250 IT(RMS) (A) BTA BTB/T12 Tc(°C) 0 25 50 75 100 1250.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Tamb(°C) IT(RMS) (A) DP A K (S=1cm ) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+21E-2 1E-1 1E+0 K=[Zth/Rth] Zth(j-c) Zth(j-a) tp(s) BTA/BTB12 series
Fig. 4: On-state characteristics (maximum values). Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (BW/CW/T1235). Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (TW). 100 ITM (A) Tj=25°C Tj max Tj max. Vto = 0.85 V Rd = 35 mΩ VTM(V) 1 10 100 10000 100 110 120 130 ITSM (A) Non repetitive Tj initial=25°C Repetitive Tc=90°C One cycle t=20ms Number of cycles 0.01 0.10 1.00 10.0010 100 1000 tp (ms) ITSM (A), I²t (A²s) Tj initial=25°C ITSM I²t dI/dt limitation: 50A/µs -40 -20 0 20 40 60 80 100 120 1400.0 0.5 1.0 1.5 2.0 2.5 IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] IGT IH & IL Tj(°C) 0.4 0.8 1.2 1.6 2.0 2.4 2.8 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c BW/CW/T1235 C B SW (dV/dt)c (V/µs) 0.1 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10.0 100.0 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c TW (dV/dt)c (V/µs) BTA/BTB12 series