STU309DH

STU309DH VBSEMI | Alldatasheet

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N- and P-Channel 40 V (D-S) MOSFET

FEATURES

• T r e n c h F E T® Power MOSFET d•1 0 0 % Rg and UIS Tested Notes a. Package lim ited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" squa re PCB (FR4 material). d. Parametric verification ongoing. PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) 40 - 40 RDS(on) () at VGS = ± 10 V 0.014 0.014 RDS(on) () at VGS = ± 4.5 V 0.016 0.016 ID (A) 50 - 50 Configuration N- and P-Pair ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNI T Drain-Source Voltage VDS 40 - 40 V Gate-Source Vo ltag e VGS ± 20 Continuous Drain Currenta TC = 25 °C ID A TC = 125 °C Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Curr ent L = 0.1 mH IAS 30 - 30 Single Pulse Avalan che Energy EAS 245 245 mJ Maximum Power Dissipati onb TC = 25 °C PD 108 108 W TC = 125 °C 32 32 Operating Junction and Storag e Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL P-CH A NNEL UNIT Junction-to-Ambient PCB Mountc RthJA 85 85 °C/WJunction-to-Case (Drain) RthJC 3.1 3.1 50 -50 35 -35 50 -50 150 -150 D1/D2 N -channel P -channel

APPLICATIONS

 CCFL Inverter S1 G1 S2 G2 TO-252-4L D-PAK Top View Drain Connected to Tab D1/D2 STU309DH A ll data sheet.com

a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design , not subject to production testing. c. Independent of operating temperature.  SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYM BOL TEST CONDITI ONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS VGS = 0 V, ID = 250 μA N-Ch 40 - - V VGS = 0 V, ID = - 250 μA P-Ch - 40 - - Gate-Source Thr eshold Voltage V GS(th) VDS = VGS, ID = 250 μA N-Ch 1.0 - 3.0 VDS = VGS, ID = - 250 μA P-Ch - 1.0 - -30 Gate-Source Leakage IGSS V DS = 0 V, VGS = ± 20 V N-Ch - - ± 100 nA P-Ch - - ± 100 Ze ro Gate Voltage Drain Current I DSS VGS = 0 V VDS = 40 V N-Ch - - 1 μA VGS = 0 V V DS = - 40 V P-Ch - - - 1 VGS = 0 V V DS = 40 V, TJ = 125 °C N-Ch - - 50 VGS = 0 V V DS = - 40 V, TJ = 125 °C P-Ch - - - 50 VGS = 0 V V DS = 40 V, TJ = 175 °C N-Ch - - 150 VGS = 0 V V DS = - 40 V, TJ = 175 °C P-Ch - - - 150 On-State Drain Currenta I D(on) VGS = 10 V VDS 5 V N-Ch 25 - - A VGS = - 10 V V DS 5 V P-Ch - 25 - - Drain-Source On-State Resistancea R DS(on) VGS = 10 V ID = 38 A N-Ch - 0.014 VGS = - 10 V I D = - 38 A P-Ch - 0.014 VGS = 10 V I D = 38 A, TJ = 125 °C N-Ch - - 0.017 VGS = - 10 V I D = - 38 A, TJ = 125 °C P-Ch - - 0.017 VGS = 10 V I D = 38 A, TJ = 175 °C N-Ch - - 0.025 VGS = - 10 V I D = - 38 A, TJ = 175 °C P-Ch - - 0.025 VGS = 4.5 V ID = 30 A N-Ch - 0.016 - VGS = - 4.5 V I D = - 30A P-Ch - 0.016 - Forward Transconductanceb gfs VDS = 15 V, ID = 38 A N-Ch - 40 - S VDS = - 15 V, ID = - 38 A P-Ch - 18 - Dynamicb Input Capacitance Ciss VGS = 0 V V DS = 20 V, f = 1 MHz N-Ch - 1799 2248 pF VGS = 0 V V DS = - 20 V, f = 1 MHz P-Ch - 2000 3500 Output Capacitance Coss VGS = 0 V V DS = 20 V, f = 1 MHz N-Ch - 282 352 VGS = 0 V V DS = - 20 V, f = 1 MHz P-Ch - 320 550 Reverse Transfer Capaci tance Crss VGS = 0 V V DS = 20 V, f = 1 MHz N-Ch - 109 136 VGS = 0 V V DS = - 20 V, f = 1 MHz P-Ch - 220 360 Total Gate Chargec Qg VGS = 10 V V DS = 20 V, ID = 10 A N-Ch - 310 - nC VGS = - 10 V V DS = - 20 V, ID = - 10 A P-Ch Gate-Source Chargec Qgs VGS = 10 V V DS = 20 V, ID = 10 A N-Ch - 5.7 - VGS = - 10 V V DS = - 20 V, ID = - 10 A P-Ch - 5.5 - Gate-Drain Chargec Qgd VGS = 10 V V DS = 20 V, ID = 10 A N-Ch - 4.8 - VGS = - 10 V V DS = - 20 V, ID = - 10 A P-Ch - 10.5 - Gate Resistance Rg f = 1 MHz N-Ch 2 4.11 6.2 P-Ch 3.1 6.3 9.5 - 420 - STU309DH A ll data sheet.com

a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design , not subject to production testing. c. Independent of operating temperature.  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITI ONS MIN. TYP. MAX. UNIT Turn-On Delay Timec td(on) VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  N-Ch - 7 11 ns VDD = - 20 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1  P-Ch - 11 17 Rise Timec tr VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  N-Ch - 21 32 VDD = - 20 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1  P-Ch - 9 14 Turn-Off Del ay Timec td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  N-Ch - 33 50 VDD = - 20 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1  P-Ch - 55 83 Fall Timec tf VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  N-Ch - 19 29 VDD = - 20 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1  P-Ch - 91 137 Source-Drain Di ode Ratings and Characteristicsb Pulsed Currenta ISM N-Ch - - 32 A P-Ch - - - 32 Forw ard Voltage VSD IS = 4 A N-Ch - 0.79 1.2 V STU309DH A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless othe rwise noted) Output Characteristics Transfer Characteristic s On-Resistance vs. Drain Current Transfer Characteristics Transconductance Capacitance 120 150 0 2 4 6 8 10 ID - Drain Current (A) VDS -D r a i n - t o -Source Voltage (V) VGS = 10 V thru 4 V VGS = 3 V 0.0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = - 55 °C TC = 125 °C 0.000 0.005 0.010 0.015 0.020 0.025 0 8 16 24 32 40 RDS(on) -O n - R esistance (Ω) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 120 150 0 3 6 9 12 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = - 55 °C TC = 125 °C TC = 25 °C 0 5 10 15 20 25 gfs -T ransconductance (S) ID -D r a i n C u r re n t ( A ) TC = 125 °C TC = - 55 °CTC = 25 °C 500 1000 1500 2000 2500 0 8 16 24 32 40 C - Capacitance (pF) VDS -D r a i n - t o -Source Voltage (V) Ciss CossCrss STU309DH A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise n oted) Gate Charge Source Drain Diode Forward Voltage Threshold Voltage On-Res istance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature 0 8 16 24 32 40 VGS - Gate-to-Source Voltage (V) Qg -T o t a l Gate Charge (nC) ID = 10 A VDS = 20 V 0.001 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C -1 . 5 -1 . 1 -0 . 7 -0 . 3 0.1 0.5 - 50 - 25 0 25 50 75 100 125 150 175 VGS(th) Variance (V) TJ -T e m p e r a t ur e (°C) ID = 250 μA ID = 5 mA 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 RDS(on) -O n - R esistance (No rmalized) TJ - Junction Temperature (°C) ID = 8 A VGS = 4.5 V VGS = 10 V 0.00 0.02 0.04 0.06 0.08 0.10 02468 1 0 RDS(on) -O n - R esistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C - 50 - 25 0 25 50 75 100 125 150 175 VDS -D r a i n - t o -Source Voltage (V) TJ - Junction Temperature (°C) ID = 1 mA STU309DH A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise n oted) Safe Operating Area N ormalized Thermal Transient Impedance, Junction-to-Ambient 0.05 0.5 500 0.01 0.1 1 10 100 ID - Drain Current (A) VDS -D r a i n - t o -Source Voltage (V * VGS > minimum VGS at which RDS(on) is specified Limited by RDS(on)* 1 ms IDM Limited TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 ms, 1 s, 10 s, DC ID Limited 10-3 10-2 1 10 60010-1 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R th J A = 85 °C/W 3. T JM - T A = P DM Z th J A (t ) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM STU309DH A ll data sheet.com

N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise n oted) Normalized Therma l Transient Impedance, Junction-to-Case Note

• The characteristics shown in the two graphs  - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 10-3 10-2 10-110-4 0.1 0.01 0.2 0.1 0.05 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Single Pulse 0.02 STU309DH A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Output Characteristics Transfer Characteristic s On-Resistance vs. Drain Current Transfer Characteristics Transconductance Capacitance 120 150 0 2 4 6 8 10 ID - Drain Current (A) VDS -D r a i n - t o -Source Vo ltage (V) VGS = 10 V thru 5 V VGS = 3 V VGS = 4 V 0.0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = - 55 °C TC = 125 °C 0.00 0.02 0.04 0.06 0.08 0.10 0 10 20 30 40 50 RDS(on) -O n - R esistance (Ω) ID -D r a i n C u r re n t ( A ) VGS = 4.5 V VGS = 10 V 120 150 0 3 6 9 12 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = - 55 °CTC = 125 °C TC = 25 °C 0 5 10 15 20 25 gfs -T r a nsconductance (S) ID - Drain Current (A) TC = 125 °C TC = - 55 °C TC = 25 °C 600 1200 1800 2400 3000 0 8 16 24 32 40 C - Capacitance (pF) VDS -D r a i n - t o -Source Voltage (V) Ciss Coss Crss STU309DH A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless othe rwise noted) Gate Charge Source Drain Diode Forward Voltage Threshold Voltage On-Res istance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature 0 10 20 30 40 50 VGS - Gate-to-Source Voltage (V) Qg -T o t a l Gate Charge (nC) ID = 10 A VDS = 20 V 0.001 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C -0 . 5 -0 . 2 0.1 0.4 0.7 1.0 - 50 - 25 0 25 50 75 100 125 150 175 VGS(th) Variance (V) TJ -T e m p e r a t u r e (°C) ID = 250 μA ID = 5 mA 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 RDS(on) -O n - R esistance (No rmalized) TJ - Junction Temperature (°C) ID = 8 A VGS = 4.5 V VGS = 10 V 0.00 0.03 0.06 0.09 0.12 0.15 02468 1 0 RDS(on) -O n - R esistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C -5 1 -4 9 -4 7 -4 5 -4 3 -4 1 - 50 - 25 0 25 50 7 5 100 125 150 175 VDS -D r a i n - t o -Source Voltage (V) TJ - Junction Temperature (°C) ID = 1 mA STU309DH A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless othe rwise noted) Safe Operating Area N ormalized Thermal Transient Impedance, Junction-to-Ambient 0.05 0.5 500 0.01 0.1 1 10 100 ID - Drain Current (A) VDS -D r a i n - t o -Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Limited by RDS(on)* 1 ms IDM Limited TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 ms, 1 s, 10 s, DC ID Limited 10-3 10-2 1 10 60010-1 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R th J A = 85 °C/W 3. T JM - T A = P DM Z th J A (t ) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM STU309DH A ll data sheet.com

P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherw ise noted) Normalized Thermal Tra nsient Impedance, Junction-to-Case Note

• The characteristics shown in the two graphs  - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 10-3 10-2 10-110-4 0.1 0.01 0.2 0.1 0.05 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective T ransient Thermal Impedance Single Pulse 0.02 STU309DH A ll data sheet.com

A ll data sheet.com

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