STP9527 STANSON | Alldatasheet

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P Channel Enhancement Mode MOSFET 710.0A STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 suSCRIPTION STP9527 is the P7Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench te chnology. This high density process is especially tailored to minimize on7state resistance. These devices are particularly suited for low voltage application, no teook power management ane ther battery powered circuits where high7side witching. PIN CONFIGURATION SOP-8 PART MARKING SOP-8

ORDERING INFORMATION

Part Number Package Part Marking STP9527 SOP78 STP9527 ※ Process Code : A ~ Z ; a ~ z FEATURE /circle6 740V/710.0A, R DS(ON) = 32mΩ (Typ.) GS =710V /circle6 740V/78.0A, R DS(ON) = 38mΩ @V GS = 74.5V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional on7resistance and maximum DC current capability /circle6 SOP78 package design

P Channel Enhancement Mode MOSFET 710.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain7Source Voltage V DSS 740 V Gate7Source Voltage V GSS ±20 V Continuous Drain Current (TJ=150 ℃) T A=25 ℃ TA=70 ℃ ID 710.0 78.0 A Pulsed Drain Current I DM 730 A Continuous Source Current (Diode Conduction) I S 72.3 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 2.8 1.8 W Operation Junction Temperature T J 755/150 ℃ Storgae Temperature Range T STG 755/150 ℃ Thermal Resistance7Junction to Ambient RθJA 70 ℃/W

P Channel Enhancement Mode MOSFET 710.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain7Source Breakdown Voltage V (BR)DSS VGS =0V,I D=7250uA 740 V Gate Threshold Voltage V GS(th) VDS =V GS ,I D=7250 uA 70.8 72.5 V Gate Leakage Current I GSS VDS =0V,V GS =±20V ±100 nA VDS =736V,V GS =0V 71 Zero Gate Voltage Drain Current I DSS VDS =736V,V GS =0V TJ=85 ℃ 710 uA On7State Drain Current I D(on) V DS=75V,V GS =4.5 710 A Drain7source On7Resistance R DS(on) VGS =710V, ID=710A VGS =74.5V, I D=78A 0.032 0.038 0.040 0.050 Ω Forward Tran Conductance gfs VDS =715V,I D=75.7A 13 S Diode Forward Voltage V SD I S=72.3A,V GS =0V 70.8 71.2 V Dynamic Total Gate Charge Q g 13 20 Gate7Source Charge Q gs 4.5 Gate7Drain Charge Q gd VDS =720V,V GS =74.5 ID≡75.0A 6.5 nC Input Capacitance Ciss 1100 Output Capacitance Coss 145 Reverse TransferCapacitance Crss VDS =720V,VGS=0V f=1MHz 115 pF 40 80 Turn7On Time td(on) tr 55 100 30 60 Turn7Off Time td(off) tf VDD =20V,R L=4Ω ID=75.0A,V GEN =74.5 RG=1Ω 12 20 nS

P Channel Enhancement Mode MOSFET 710.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 TYPICAL CHARACTERICTICS

P Channel Enhancement Mode MOSFET 710.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 TYPICAL CHARACTERICTICS

P Channel Enhancement Mode MOSFET 710.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 TYPICAL CHARACTERICTICS

P Channel Enhancement Mode MOSFET 710.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 SOP-8 PACKAGE OUTLINE