STP2327

STP2327 STANSON | Alldatasheet

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P Channel Enhancement Mode MOSFET -1.5A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP2327 2013. Rev.1 DESCRIPTION STP2327 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-6L PART MARKING Y: Year Code A: date Code

P Channel Enhancement Mode MOSFET -1.5A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP2327 2013. Rev.1

P Channel Enhancement Mode MOSFET -1.5A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP2327 2013. Rev.1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) 2 nS 19 Turn-Off Time td(off) tf 20 19

P Channel Enhancement Mode MOSFET -1.5A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP2327 2013. Rev.1 TYPICAL CHARACTERISTICS Fig 1 Output Characteristics Fig. 2 On-Resistance vs Gate Source Voltage Fig 3 Source-Drain Forward Voltage Fig. 4 Gate Charge Fig. 5 Gate Voltage vs Junction temperature Fig. 6 On-Resistance vs Junction

P Channel Enhancement Mode MOSFET -1.5A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP2327 2013. Rev.1 SOT-23-6L PACKAGE OUTLINE