STC6301D STANSON | Alldatasheet
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N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6301D 2017. V1 DESCRIPTION The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION TO252-4L D1 / D2 PART MARKING Y ∶Year A ∶Date code B/C：Process Code X ：Package Code
N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6301D 2017. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical N P Unit Drain-Source Voltage VDSS 60 -60 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current TA=25℃ TA=70℃ ID 23.0 15.0 -18.0 -11.0 A Pulsed Drain Current IDM 46 -36 A Continuous Source Current (Diode Conduction) IS 59 -50 A Power Dissipation TA=25℃ PD 34.7 34.7 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 85 85 ℃/W
N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6301D 2017. V1 Turn-On Time td(on) tr N-Channel VDS=30V,RG=3.3Ω ID=8A,VGS=10V P-Channel VDS=-20V,RG=3.3Ω ID=-1A,RGS=-10V
N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6301D 2017. V1 TYPICAL CHARACTERICTICS (N MOS)
N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6301D 2017. V1 TYPICAL CHARACTERICTICS (N MOS)
N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6301D 2017. V1 YPICAL CHARACTERICTICS (P MOS)
N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6301D 2017. V1 TYPICAL CHARACTERICTICS (P MOS)
N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6301D 2017. V1 TO252-4L PACKAGE OUTLINE