STC4301D STANSON | Alldatasheet
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N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC4301D 2017. V1 DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION TO252-4L D1 / D2 PART MARKING Y ∶Year A ∶Date code B/C：Process Code X ：Package Code
N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC4301D 2017. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical N P Unit Drain-Source Voltage VDSS 40 -40 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current TA=25℃ TA=70℃ ID 23.0 18.0 -20.0 -16.0 A Pulsed Drain Current IDM 40 -46 A Continuous Source Current (Diode Conduction) IS 18 -27.5 A Power Dissipation TA=25℃ PD 25 31.5 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 62.5 62.5 ℃/W
N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC4301D 2017. V1 Turn-On Time td(on) tr N-Channel VDS=20V,RG=3.3Ω ID=1A,VGS=10V P-Channel VDS=-20V,RG=3.3Ω ID=-1A,RGS=-10V
N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC4301D 2017. V1 TYPICAL CHARACTERICTICS (N MOS)
N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC4301D 2017. V1 TYPICAL CHARACTERICTICS (N MOS)
N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC4301D 2017. V1 YPICAL CHARACTERICTICS (P MOS)
N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC4301D 2017. V1 TYPICAL CHARACTERICTICS (P MOS)
N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC4301D 2017. V1 TO252-4L PACKAGE OUTLINE