STP3481 STANSON | Alldatasheet
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Technical content
P Channel Enhancement Mode MOSFET -5.2A
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com STP3481 2006. V1
DESCRIPTION
The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6P PART MARKING TSOP-6P Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number Package Part Marking STP3481S6RG TSOP-6P 81YA ※ Process Code : A ~ Z ; a ~ z FEATURE z -30V/-5.2A, RDS(ON) = 55m-ohm @VGS = -10V z -30V/-4.2A, RDS(ON) = 75m-ohm @VGS = -4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z TSOP-6P package design
P Channel Enhancement Mode MOSFET -5.2A www.stansontech.com STP3481 2006. V1 ※ STP3481S6RG S6 : TSOP-6P ; R : Tape Reel ; G : Pb – Free ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GSS ±20 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID -5.2 -4.2 A Pulsed Drain Current I DM -20 A Continuous Source Current (Diode Conduction) I S -1.7 A Power Dissipation TA=25℃ TA=70℃ PD 2.0 1.3 W Operation Junction Temperature T J 150 ℃ Storgae Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 90 ℃/W
P Channel Enhancement Mode MOSFET -5.2A www.stansontech.com STP3481 2006. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 V Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250uA -1.0 -3.0 V Gate Leakage Current I GSS VDS=0V,VGS=±20V ±100 Na VDS=-24V,VGS=0V -1 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V TJ=55℃ -10 UA On-State Drain Current I D(on) VDS≦-5V,VGS=-10V -10 A Drain-source On-Resistance R DS(on) VGS=-10.0V,ID=-5.2A VGS=-4.5V,ID=-4.2A 0.041 0.058 0.055 0.075 Ω Forward Transconductance g fs V DS=-5.0V,ID=-4.0A 10 S Diode Forward Voltage V SD I S=-1.0A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Q g 14 21 Gate-Source Charge Q gs 1.9 Gate-Drain Charge Q gd VDS=-15V VGS=-10V ID≣-4.0A 3.7 nC Input Capacitance C iss 540 Output Capacitance C oss 131 Reverse Transfer Capacitance C rss VDS=-15V VGS=0V F=1MHz 105 pF 10 16 Turn-On Time td(on) tr 15 25 32 50 Turn-Off Time td(off) tf VDD=-15V RL=15Ω ID=-1.0A VGEN=-10V RG=6Ω 21 32 nS
P Channel Enhancement Mode MOSFET -5.2A www.stansontech.com STP3481 2006. V1 TYPICAL CHARACTERICTICS (25℃ Unless noted)
P Channel Enhancement Mode MOSFET -5.2A www.stansontech.com STP3481 2006. V1 TYPICAL CHARACTERICTICS (25℃ Unless noted)
P Channel Enhancement Mode MOSFET -5.2A www.stansontech.com STP3481 2006. V1 TSOP-6P PACKAGE OUTLINE C