STP9435 STANSON | Alldatasheet
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Technical content
P Channel Enhancement Mode MOSFET - 5.6A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1
DESCRIPTION
ST9435 is the P-Channel logic enhancement mo de power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, notebook computer power management, and other battery powered circuits. PIN CONFIGURATION SOP-8 PART MARKING SOP-8
ORDERING INFORMATION
Part Number Package Part Marking STP9435S8RG SOP-8P STP9435 STP9435S8TG SOP-8P STP9435 ※ Process Code : A ~ Z ; a ~ z ※ STP9435S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STP9435S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free FEATURE z -30V/-5.6A, RDS(ON) = 60mΩ @VGS = -10V z -30V/-5.0A, RDS(ON) = 70mΩ @VGS = -6.0V z -30V/-4.4A, RDS(ON) = 80mΩ @VGS = -4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design
P Channel Enhancement Mode MOSFET - 5.6A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -6.5 -4.6 A Pulsed Drain Current IDM -30 A Continuous Source Current (Diode Conduction) IS -2.3 A Power Dissipation TA=25℃ TA=70℃ PD 2.5 1.6 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient R θJA 70 ℃/W
P Channel Enhancement Mode MOSFET - 5.6A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS V GS=0V,ID=-250uA -30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=- 250uA -1.0 -3.0 V Gate Leakage Current I GSS V DS=0V,VGS=±20V ±100 nA VDS=-24V,VGS=0V -1 Zero Gate Voltage Drain Current I DSS VDS=-24V,VGS=0V TJ=85℃ -5 uA On-State Drain Current I D(on) V DS=-5V,VGS=-4.5V -10 A Drain-source On- Resistance RDS(on) VGS=-10V,ID=-5.6A VGS=-6.0V,ID=-5.0A VGS=-4.5V,ID=-4.4A mΩ Forward Transconductance gfs V DS=-15V,ID=-5.7V 13 S Diode Forward Voltage V SD I S=-2.3A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Q g 16 24 Gate-Source Charge Q gs 2.3 Gate-Drain Charge Q gd VDS=-15V,VGS=-10V ID≡-3.5A 4.5 nC Input Capacitance Ciss 680 Output Capacitance Coss 120 Reverse TransferCapacitance Crss VDS ==-15V,VGS=0V f=1MHz pF 14 25 Turn-On Time td(on) tr 16 26 43 70 Turn-Off Time td(off) tf VDD=-15V,RL=15Ω ID=-1A,VGEN=-10V RG=6Ω 30 52 nS
P Channel Enhancement Mode MOSFET - 5.6A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET - 5.6A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET - 5.6A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET - 5.6A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP9435 2007. V1 PACKAGE OUTLINE SOP-8P