STP7401 STANSON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

P Channel Enhancement Mode MOSFET -2.8A STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com STP7401 2005. V1

DESCRIPTION

STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-323 (SC-70) 1.Gate 2.Source 3.Drain PART MARKING SOT-323 Y: Year Code A: Process Code

ORDERING INFORMATION

Part Number Package Part Marking STP7401S32RG SOT-323 01YW ※ Process Code : A ~ Z ; a ~ z ※ ST7401S32RG S32 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free FEATURE z - 30V/-2.8A, RDS(ON) = 115mΩ @VGS = -10V z -30V/-2.5A, RDS(ON) = 135mΩ @VGS = -4.5V z -30V/-1.5A, RDS(ON) = 170mΩ @VGS = -2.5V z -30V/-1.0A, RDS(ON) = 240mΩ @VGS = -1.8V z Super high density cell design for Extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-323 (SC-70) package design 1 2 D G S 1 2 01YW

P Channel Enhancement Mode MOSFET -2.8A STANSON TECHNOLOGY http://www.stansontech.com STP7401 2005. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GSS ±12 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID -2.8 -2.1 A Pulsed Drain Current I DM -8 A Continuous Source Current (Diode Conduction) I S -1.4 A Power Dissipation TA=25℃ TA=70℃ PD 0.33 0.21 W Operation Junction Temperature T J 150 ℃ Storage Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 105 ℃/W

P Channel Enhancement Mode MOSFET -2.8A STANSON TECHNOLOGY http://www.stansontech.com STP7401 2005. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 V Gate Threshold Voltage V GS(th) V DS=VGS,ID=-250uA -0.4 -1.0 V Gate Leakage Current I GSS VDS=0V,VGS=±12V ±100 nA VDS=-24V,VGS=0V -1 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V TJ=85℃ -5 uA On-State Drain Current I D(on) VDS≦-5V,VGS=-4.5V -4.0 A Drain-source On-Resistance R DS(on) VGS=-10V,ID=-2.8A VGS=-4.5V,ID=-2.5A VGS=-2.5V,ID=-1.5A VGS=-1.8V,ID=-1.0A 105 125 155 210 115 135 170 240 mΩ Forward Transconductance g fs V DS=-5V,ID=-4.0V 4 S Diode Forward Voltage V SD I S=-1.0A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Q g 5.8 Gate-Source Charge Q gs 0.8 Gate-Drain Charge Q gd VDS=-15V VGS=-4.5V ID≣-2.0A 1.5 nC Input Capacitance C iss 380 Output Capacitance C oss 55 Reverse Transfer Capacitance C rss VDS=-15V VGS=0V F=1MHz 40 pF Turn-On Time td(on) tr 3.9 Turn-Off Time td(off) tf VDS=-15V ID=-1A RL=15Ω RG=-3Ω VGEN=-10V 15 nS

P Channel Enhancement Mode MOSFET -2.8A STANSON TECHNOLOGY http://www.stansontech.com STP7401 2005. V1 TYPICAL CHARACTERICTICS (25℃ unless otherwise noted)

P Channel Enhancement Mode MOSFET -2.8A STANSON TECHNOLOGY http://www.stansontech.com STP7401 2005. V1 TYPICAL CHARACTERICTICS (25℃ unless otherwise noted)

P Channel Enhancement Mode MOSFET -2.8A STANSON TECHNOLOGY http://www.stansontech.com STP7401 2005. V1 SOT-323 PACKAGE OUTLINE