STP6635GH VBSEMI | Alldatasheet

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Technical content

P-Channel 30-V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition r e n c h F E T® Power MOSFET  100 % Rg Tested

APPLICATIONS

 Load Switch  Batte ry Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) - 30 0.018 at VGS = - 10 V - 40 13 nC 0.025 at VGS = - 4.5 V - 35 Notes: a. Surface mounted on 1" x 1" FR 4 board. b. t = 10 s. c. Maximum under Steady State conditions is 95 °C/W. d. Based on T C = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, un less otherwise noted Parameter Symbol Limit Un it Drain-Source Voltage VDS - 30 VGate-Source Voltage VGS ± 20 Continuous Drain C urrent (TJ = 150 °C) TC = 25 °C ID - 40 A TC = 70 °C - 35 TA = 25 °C - 30.0a, b TA = 70 °C - 28 a, b Pulsed Drain Current IDM - 150 Continuous Source-Drain Diode Current TC = 25 °C IS - 3.5 TA = 25 °C - 2.1a, b Maximum Po wer Dissipation TC = 25 °C PD WTC = 70 °C 27 TA = 25 °C 2.5a, b TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Ra nge TJ, Tstg - 55 to 150 °C THERMAL RE SISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 40 50 °C/WMaximum Junction-to-Foot Steady State RthJF 24 30 T O-252 S GD S G D P-Channel MOSFET E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP6635GH A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Ab solute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, un less otherwise noted Parameter Symbol Test Co nditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 31 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 2.5 V Gate-Sou rce Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 10 V - 40 A Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs VDS = - 15 V, ID = - 7.0 A 18 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 1455 pFOutput Capacitance Coss 180 Reverse Transfer Capacitance Crss 145 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 7.0 A 25 38 nCVDS = - 15 V, VGS = - 4.5 V, ID = - 7.0 A 13 20 Gate-Source Charge Qgs 3.5 Gate-Drain Charge Qgd 5.5 Gate Resistance Rg f = 1 MHz 0.4 2.0 4.0 Ω Tur n-On Delay Time td(on) VDD = - 15 V, RL = 2.7 Ω ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω 10 20 ns Rise Time tr 13 20 Turn-Off DelayTime td(off) 23 35 Fall Time tf 91 8 Tur n-On D elay Time td(on) VDD = - 15 V, RL = 2.7 Ω ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω 38 57 Rise Time tr 89 134 Turn-Off DelayTime td(off) 22 33 Fall Time tf 11 17 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I S TC = 25 °C - 6.5 APulse Diode Forward Current ISM - 30 Body Diode Voltage VSD IS = - 5.6 A, VGS = 0 V - 0.71 - 1.2 V Body Diode Reverse Reco very Time t rr IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C 22 33 ns Body Diode Reverse Recover y Charge Q rr 17 26 nC Reverse Recove ry Fall Time ta 13 nsReverse Recover y Rise Time tb 9 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP6635GH A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteris tics On-Resistance vs. Drain Current Gate Charge 012345 VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS =1 0V thr u 4 V VGS =3 V VGS = 2V 0.010 0.015 0.020 0.025 0.030 0.035 0 5 10 15 20 25 30 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS =1 0V VGS =4 . 5V 048 12 16 20 24 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS ID =7A VDS =1 5 V VDS =2 4V Transfer Characteristics Capacitance On-Res istance vs. Junction Temperature 0.0 0.8 1.6 2.4 3.2 4.0 3.0 VGS - Gate-to-Sou rce Voltage (V) - Drain Current (A)ID TC = 25 °C TC = 125 °C TC = - 55 °C Crss 300 600 900 1200 1500 1800 0 6 12 18 24 30 Ciss VDS - Drain-to-So urce Voltage (V) C - Capacitance (pF) Coss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) VGS = - 4.5 V,I D =-7A VGS =-1 0 V,I D =-5 . 6A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP6635GH A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Fo rward Voltage 0.1 100 TJ = 150 °C VSD -S ource-to-Drain Voltage ( - Source Current (A)IS TJ = 25 °C On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junct ion-to-Ambient 0.00 0.01 0.02 0.03 0.04 0.05 04 8 12 16 20 - On-Resistance (Ω)RDS(on) VGS - Gate-to-Sou rce Voltage (V) TJ = 25 °C TJ = 125 °C ID =7A 0.001 0.01 0.1 1 10 100 Time (s) Power ( W) Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimu m VGS at which RDS(on) is specified 100 0.1 1 10 100 0.01 ID - Drain Current (A) 0.1 TA =2 5 ° C Single Pulse 100 ms 10 s DC Limited byR DS(on)* BVDSS Limited 10 ms 1m s Threshold Voltag e - 0.2 - 0.1 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 175 ID =5m A ID = 250 μA VGS(th) Variance (V) TJ - Temperature (°C) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP6635GH A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 T C - Case Temperature (°C) ID - Drain Current (A) Power, Junction-to-Foot 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Derating, Junct ion-to-Ambient 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 T A -A mbient Temperature (°C) Power (W) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP6635GH A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Ju nction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 75 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0. Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Ju nction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0. Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse 0.02 0.05 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP6635GH A ll data sheet.com

  • Dimensi on L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MIN. MAX. M I N. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP6635GH A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR DP AK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP6635GH A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP6635GH A ll data sheet.com