STP6621 STANSON | Alldatasheet

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P Channel Enhancement Mode MOSFET 618.0A STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com STP6621 2010. V1 SCRIPTION STP6621 is the P6Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench te chnology. This high density process is especially tailored to minimize on6state resistance. These devices are particularly suited for low voltage application, no teook power management ane ther battery powered circuits where high6side witching. PIN CONFIGURATION SOP-8 PART MARKING SOP-8 FEATURE /circle6 660V/610.0A, R DS(ON) = 23mΩ (Typ.) @V GS =610V /circle6 660V/68.0A, R DS(ON) = 28mΩ @V GS = 64.5V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional on6resistance and maximum DC current capability /circle6 SOP68 package design

P Channel Enhancement Mode MOSFET 618.0A STANSON TECHNOLOGY www.stansontech.com STP6621 2010. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain6Source Voltage V DSS 660 V Gate6Source Voltage V GSS ±20 V Continuous Drain Current (TJ=150 ℃) T A=25 ℃ TA=70 ℃ ID 618.0 611.0 A Pulsed Drain Current I DM 650 A Continuous Source Current (Diode Conduction) I S 64.3 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 3.1 2.0 W Operation Junction Temperature T J 655/150 ℃ Storgae Temperature Range T STG 655/150 ℃ Thermal Resistance6Junction to Ambient RθJA 70 ℃/W

P Channel Enhancement Mode MOSFET 618.0A STANSON TECHNOLOGY www.stansontech.com STP6621 2010. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain6Source Breakdown Voltage V (BR)DSS VGS =0V,I D=6250uA 660 V Gate Threshold Voltage V GS(th) VDS =V GS ,I D=6250 uA 60.8 62.5 V Gate Leakage Current I GSS VDS =0V,V GS =±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS =648V,V GS =0V 61 uA VDS =648V,V GS =0V TJ=85 ℃ 610 On6State Drain Current I D(on) V DS=65V,V GS =10V 618 A Drain6source On6Resistance R DS(on) VGS =610V, I D=610A VGS =64.5V, I D=68A 0.023 0.028 0.030 0.038 Ω Forward Tran Conductance gfs VDS =65V,I D=66.7A 18 S Diode Forward Voltage V SD I S=62.3A,V GS =0V 60.7 61.0 V Dynamic Total Gate Charge Q g VDS =630V,V GS =610 ID≡66.2A 47 55 nC Gate6Source Charge Q gs 9.2 Gate6Drain Charge Q gd 9.3 Input Capacitance Ciss VDS =630V,V GS =0V f=1MHz 2410 pF Output Capacitance Coss 179 Reverse TransferCapacitance Crss 125 Turn6On Time td(on) tr VDS=630V,R L=4.7 Ω VGS =610V,RGEN =3Ω 9.8 nS 6.1 Turn6Off Time td(off) tf 12.9

P Channel Enhancement Mode MOSFET 618.0A STANSON TECHNOLOGY www.stansontech.com STP6621 2010. V1 TYPICAL CHARACTERICTICS

P Channel Enhancement Mode MOSFET 618.0A STANSON TECHNOLOGY www.stansontech.com STP6621 2010. V1 TYPICAL CHARACTERICTICS

P Channel Enhancement Mode MOSFET 618.0A STANSON TECHNOLOGY www.stansontech.com STP6621 2010. V1 SOP-8 PACKAGE OUTLINE