STP65NF06 VBSEMI | Alldatasheet
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FEATURES
- 175 °C Ju nction Temperature TrenchFET ® Power MOSFET Material categorizatio Notes: a. Package limit ed. b. Surface mounted on 1" x 1" FR4 board. c. t 10 s. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.011 at VGS = 10 V 60 0.012 at VGS = 4.5 V 50 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Li mit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C ID A TC = 100 °C 50a Pulsed Drain Current IDM 200 Continuous Source Current (Diode Conductio n) IS 50a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycl e 1 %) L = 0.1 mH EAS 125 mJ Maximum Po wer Dissipation TC = 25 °C PD 136 WTA = 25 °C 3b, 8.3b, c Operating Junction and S torage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol T ypical Maximum Unit Maximum Junction-to-Ambienta t 10 sec RthJA 15 18 °C/WSteady State 40 50 Maximum Junction-to-Case RthJC 0.85 1.1 N-Channel 60-V (D-S) MOSFET TO-220AB G D S STP65NF06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width 300 µs, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unle ss otherwise noted) Parameter Symbol Test Cond itions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate V oltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µAVDS = 60 V, VGS = 0 V, TJ = 125 °C 50 VDS = 60 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V 60 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 20 A 0.011 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.014 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.018 VGS = 4.5 V, ID = 15 A 0.012 Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 60 S Dynamic Input Capacitan ce Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 3650 pFOutput Capacitance Coss 570 Reverse Transfer Capacitance Crss 325 Total Gate Chargec Qg VDS = 30 V, VGS = 10 V, ID = 50 A nCGate-Source Chargec Qgs 10 Gate-Drain Chargec Qgd 12 Tur n-On Delay Timec td(on) VDD = 30 V, RL = 0.6 ID 50 A, VGEN = 10 V, Rg = 2.5 10 20 nsRise Timec tr 15 25 Turn-Off Dela y Timec td(off) 35 50 Fall T imec tf 20 30 Source-Drain Diode Ratin gs and Characteristics (TC = 25 °C) Pulsed Current ISM 60 A Diode Forward V oltage VSD IF = 20 A, VGS = 0 V 11 . 5 V Re verse Recovery Time trr IF = 20 A, di/dt = 100 A/µs 45 100 ns STP65NF06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
STICS (25 °C unless noted) Output Characteristics T ransconductance Capacitance 120 160 200 02468 1 0 VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS = 10 thru 5 V
2 V, 3 V
- Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 600 1200 1800 2400 3000 3600 4200 4800 0 1 02 03 0 4 05 06 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Ciss Coss Transfer Characteristics On-Res istance vs. Drain Current Gate Charge 100 012345 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C - 55 °C TC = 125 °C 0.000 0.004 0.008 0.012 0.016 0.020 0 2 04 06 08 0 1 0 0 ID - Drain Current (A) RDS(on) VGS = 4.5 V VGS = 10 V 0 1 02 03 04 05 0 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 30 V ID = 50 A STP65NF06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
TYPICAL CHARACTERISTICS (25 °C unless noted) On-Resistance vs. Junction Temperature 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS = 10 V ID = 20 A RDS(on) - On-Resistance (Normaliz ed) Source-Drain Dio de Forward Voltage - Source Current (A)IS VSD - Source-to-Drain Voltage (V) 100 TJ = 25 °C TJ = 150 °C STP65NF06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
rrent vs. Ambient Temperature 0 25 50 75 100 125 150 175 TA - Ambient Temperature (° - Drain Current (A)ID Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified - Drain Current (A)ID 1000 0.01 0.1 1 10 100 100 TC = 25 °C Single Pulse 1 ms 10 ms DC 0.1 RDS(on)* Limited by 10 µs 100 µs 100 ms Normalized Thermal Transie nt Impedance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 11 0 Normalized Effective Tr ansient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 100 Single Pulse 0.02 0.05 STP65NF06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
- M* = 0.0 52 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C DIM. MILLIMETERS INCH ES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 Ø P 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 STP65NF06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com
All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. STP65NF06 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com