STP60NF06FP

STP60NF06FP VBSEMI | Alldatasheet

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• 175 °C Ju nction Temperature  TrenchFET ® Power MOSFET  Material categorizatio Notes: a. Package limit ed. b. Surface mounted on 1" x 1" FR4 board. c. t  10 s. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.010 at VGS = 10 V 60 0.012 at VGS = 4.5 V 50 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Li mit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C ID A TC = 100 °C 50a Pulsed Drain Current IDM 200 Continuous Source Current (Diode Conductio n) IS 50a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycl e  1 %) L = 0.1 mH EAS 125 mJ Maximum Po wer Dissipation TC = 25 °C PD 136 WTA = 25 °C 3b, 8.3b, c Operating Junction and S torage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol T ypical Maximum Unit Maximum Junction-to-Ambienta t  10 sec RthJA 15 18 °C/WSteady State 40 50 Maximum Junction-to-Case RthJC 0.85 1.1 G D S TO-220 FULLPAK Top View N-Channel 60-V (D-S) MOSFET STP60NF06FP E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unle ss otherwise noted) Parameter Symbol Test Cond itions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 123 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate V oltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µAVDS = 60 V, VGS = 0 V, TJ = 125 °C 50 VDS = 60 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V 60 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 20 A 0.010 0.012 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.016 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.020 VGS = 4.5 V, ID = 15 A 0.013 Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 60 S Dynamic Input Capacitan ce Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 2650 pFOutput Capacitance Coss 470 Reverse Transfer Capacitance Crss 225 Total Gate Chargec Qg VDS = 30 V, VGS = 10 V, ID = 50 A 47 70 nCGate-Source Chargec Qgs 10 Gate-Drain Chargec Qgd 12 Tur n-On Delay Timec td(on) VDD = 30 V, RL = 0.6  ID  50 A, VGEN = 10 V, Rg = 2.5  10 20 nsRise Timec tr 15 25 Turn-Off Dela y Timec td(off) 35 50 Fall T imec tf 20 30 Source-Drain Diode Ratin gs and Characteristics (TC = 25 °C) Pulsed Current ISM 60 A Diode Forward V oltage VSD IF = 20 A, VGS = 0 V 11 . 5 V Re verse Recovery Time trr IF = 20 A, di/dt = 100 A/µs 45 100 ns STP60NF06FP E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

STICS (25 °C unless noted) Output Characteristics T ransconductance Capacitance 120 160 200 02468 1 0 VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS = 10 thru 5 V

2 V, 3 V

• Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 500 1000 1500 2000 2500 3000 3500 4000 0 1 02 03 0 4 05 06 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Crss Ciss Coss Transfer Characteristics On-Res istance vs. Drain Current Gate Charge 100 012345 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C - 55 °C TC = 125 °C 0.000 0.004 0.008 0.012 0.016 0.020 0 2 04 06 08 0 1 0 0 ID - Drain Current (A) RDS(on) VGS = 4.5 V VGS = 10 V 0 1 02 03 04 05 0 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 30 V ID = 50 A STP60NF06FP E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C unless noted) On-Resistance vs. Junction Temperature 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS = 10 V ID = 20 A RDS(on) - On-Resistance (Normaliz ed) Source-Drain Dio de Forward Voltage - Source Current (A)IS VSD - Source-to-Drain Voltage (V) 100 TJ = 25 °C TJ = 150 °C STP60NF06FP E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

rrent vs. Ambient Temperature 0 25 50 75 100 125 150 175 TA - Ambient Temperature (° - Drain Current (A)ID Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified - Drain Current (A)ID 1000 0.01 0.1 1 10 100 100 TC = 25 °C Single Pulse 1 ms 10 ms DC 0.1 RDS(on)* Limited by 10 µs 100 µs 100 ms Normalized Thermal Transie nt Impedance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 11 0 Normalized Effective Tr ansient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 100 Single Pulse 0.02 0.05 STP60NF06FP E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TO-220 FULLPAK (HIGH VOLTAGE) Notes 1. To be used only for process drawing. 2. These di mensions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet C pk > 1.33. 4. All dimensions include bur rs and plating thickness. No chipping or package damage. E b n L e Ø P D c u V A MILLIMETERS INCHES DIM. MIN. MAX . MIN. MAX. A 4.570 4.830 0.180 0.190 A1 2.570 2.830 0.101 0.111 A2 2.510 2.850 0.099 0.112 b 0.622 0.890 0.024 0.035 b2 1.229 1.400 0.048 0.055 b3 1.229 1.400 0.048 0.055 c 0.440 0.629 0.017 0.025 D 8.650 9.800 0.341 0.386 d1 15.88 16.120 0.622 0.635 d3 12.300 12.920 0.484 0.509 E 10.360 10.630 0.408 0.419 e 2.54 BSC 0.100 BSC L 13.200 13.730 0.520 0.541 L1 3.100 3.500 0.122 0.138 n 6.050 6.150 0.238 0.242 Ø P 3.050 3.450 0.120 0.136 u 2.400 2.500 0.094 0.098 v 0.400 0.500 0.016 0.020 ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 STP60NF06FP E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. STP60NF06FP E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com