STP607D STANSON | Alldatasheet
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P Channel Enhancement Mode MOSFET -10.0A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com STP607D 2010. V1
DESCRIPTION
STP607D is the P-Channel logic enhancement mode pow er field effect transistor which is produced using high cell density, DMOS trench te chnology. The STP607D has been designed specially to improve the overall efficienc y of DC/DC converters using either synchronous or conventional switching PWM controlle rs. It has been optimized for low gate charge, low R DS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 PART MARKING Y: Year Code A: Date Code Q: Process Code FEATURE -60V/-10.0A, R DS(ON) = 150mΩ（Typ. ） @V GS = -10V Super high density cell design for extremely low R DS(ON) Exceptional on-resistance and maximum DC current capability TO-252package design
P Channel Enhancement Mode MOSFET -10.0A STANSON TECHNOLOGY www.stansontech.com STP607D 2010. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbo l Typical Unit Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150 ℃) TA=25 ℃ TA=100 ℃ ID -10.0 -6.0 A Pulsed Drain Current IDM -20 A Continuous Source Current (Diode Conduction) IS -12 A Power Dissipation TA=25 ℃ PD 25 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 20 ℃/W
P Channel Enhancement Mode MOSFET -10.0A STANSON TECHNOLOGY www.stansontech.com STP607D 2010. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Uni t Static Drain -Source Breakdown Voltage V(BR)DSS V GS =0V,ID=-250uA -60 V Gate Threshold Voltage VGS(th) V DS =V GS ,ID=-250uA -1.5 -3.0 V Gate Leakage Current I GSS V DS =0V,V GS =±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS =-48V,V GS =0V -1 uA VDS =-48V,V GS =0V TJ=55 ℃ -5 On -State Drain Current ID(on) VDS ≧-10V,V DS=-5V -10 A Drain-source On- Resistance R DS(on) V GS =-10V,I D=-10A 150 160 mΩ Forward Transconductance gfs V DS =-5V,I D=-10A 13 S Diode Forward Voltage V SD I S=-7.8A,V GS =0V -1.0 V Dynamic Total Gate Charge Q g VDS =-30V,V GS=-10V ID=-10A nC Gate-Source Charge Q gs 8 Gate-Drain Charge Q gd 3.0 Input Capacitance Ciss VDS =-30V,V GS=0V F=1MHz 1200 pF Output Capacitance Coss 115 Reverse TransferCapacitance Crss 7 Turn-On Time td(on) tr VGS =-10V,V DS=-30V REGN =3Ω,R L=2.5Ω nS Turn-Off Time td(off) tf
P Channel Enhancement Mode MOSFET -10.0A STANSON TECHNOLOGY www.stansontech.com STP607D 2010. V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET -10.0A STANSON TECHNOLOGY www.stansontech.com STP607D 2010. V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET -10.0A STANSON TECHNOLOGY www.stansontech.com STP607D 2010. V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET -10.0A STANSON TECHNOLOGY www.stansontech.com STP607D 2010. V1
P Channel Enhancement Mode MOSFET -10.0A STANSON TECHNOLOGY www.stansontech.com STP607D 2010. V1 TO-252-2L PACKAGE OUTLINE SOP-8P