STP601 STANSON | Alldatasheet
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P Channel Enhancement Mode MOSFET 630A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com Copyright © 2009, Stanson Corp. STP601 / STP601D 2010 . V1
DESCRIPTION
STP601/STP601D is the P6Channel logic enhancement m ode power field effect transistor which is produced using high cell densit y, DMOS trench technology. The STP401 has been designed specially to improve the o verall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R DS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 PART MARKING Y: Year Code A: Week Code Q: Process Code FEATURE /circle6 660V/620.0A, R DS(ON) = 20mΩ(typ.) @V GS = 610V /circle6 660V/620.0A, R DS(ON) = 27mΩ @V GS = 64.5V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional on6resistance and maximum DC current capability /circle6 TO6252,TO6251 package design ( STP601D ) ( STP610 )
P Channel Enhancement Mode MOSFET 630A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP601 / STP601D 2010 . V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted) Parameter Symbo l Typical Unit Drain6Source Voltage VDSS 660 V Gate6Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150 ℃) TA=25 ℃ TA=100 ℃ ID 630.0 622.0 A Pulsed Drain Current IDM 6110 A Continuous Source Current (Diode Conduction) IS 630 A Power Dissipation TA=25 ℃ PD 60 W Operation Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG 655/150 ℃ Thermal Resistance6Junction to Ambient RθJA 25 ℃/W
P Channel Enhancement Mode MOSFET 630A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP601 / STP601D 2010 . V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain 6Source Breakdown Voltage V(BR)DSS V GS =0V,ID=6250uA 660 V Gate Threshold Voltage VGS(th) V DS =V GS ,ID=6250uA 61.0 63.0 V Gate Leakage Current I GSS V DS =0V,V GS =±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS =648V,V GS =0V 61 uA VDS =648V,V GS =0V TJ=55 ℃ 65 On 6St ate Drain Current ID(on) VDS ≧610V,V DS =65V 630 A Drain6source On6 Resistance R DS(on) VGS =610V,I D=620A VGS =64.5V,I D=620A 40 mΩ Forward Transconductance gfs V DS =650V,I D=67.8A 33 S Diode Forward Voltage V SD I S=67.8A,V GS =0V 61.2 V Dynamic Total Gate Charge Q g VDS =630V,V GS=610V ID=620A nC Gate6Source Charge Q gs 23 Gate6Drain Charge Q gd 10 Input Capacitance Ciss VDS =630V,V GS=0V F=1MHz 3600 pF Output Capacitance Coss 240 Reverse TransferCapacitance Crss 153 Turn6On Time td(on) tr VGS =610V,V DS=630V RD=3Ω,R G=1.5Ω nS Turn6Off Time td(off) tf
P Channel Enhancement Mode MOSFET 630A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP601 / STP601D 2010 . V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET 630A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP601 / STP601D 2010 . V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET 630A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP601 / STP601D 2010 . V1 TO-252-2L PACKAGE OUTLINE SOP-8P
P Channel Enhancement Mode MOSFET 630A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP601 / STP601D 2010 . V1 TO-251 PACKAGE OUTLINE SOP-8P