STP5N60 VBSEMI | Alldatasheet

Document overview

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Technical content

FEATURES

  • Low gate charge Q g results in simple drive requirement Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche voltage and current

APPLICATIONS

  • Switch mode power supply (SMPS) Uninterruptible power supply
  • High speed power switching APPLICABLE OFF LINE SMPS TOPOLOGIES
  • Active clamped forward
  • M a i n s w i t c h Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). c. I SD  9.2 A, dI/dt  50 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 600 RDS(on) ()V GS = 10 V 0.8 Qg max. (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configurat ion Single N-Channel MOSFET G D S TO-220AB G D S Available ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, u nless otherwise noted) PARAMETER SY MBOL LI MIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 8.0 ATC = 100 °C 5.8 Pulsed Dra in Currenta IDM 37 Linear Derating Factor 1.3 W/°C Single P ulse Avalanche Energy b EAS 290 mJ Repetitive Av alanche Current a IAR 8.0 A Repetitive Aval anche Energy a EAR 17 mJ Maximum Power Dissipation TC = 25 °C PD 170 W Peak Dio de Recovery dV/dt c dV/dt 5.0 V/ns Operating Juncti on and Storage Temperature Range TJ, Tstg -55 to +150 °C Solder ing Recommendations (Peak temperature) d for 10 s 300 Mounting Torque 6-32 or M3 screw 10 lbf · in

1.1 N · m

/$IBOOFM07 %4 P ower MOSFET E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP5N60 A ll data sheet.ocm

a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. C oss effect ive is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESISTANCE R ATINGS PARAMETER SYMBO L TYP. MAX. UNIT Maxi mum Junction-to-Ambient RthJA -6 2 °C/WCase-to-Sink, Flat, Greased Surf ace RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -0 .75 SPECIFICATIONS (TJ = 25 °C, unless ot herwise noted) PARAMETER SYMB OL T EST CONDITIONS MIN. TYP. MAX. UNIT Static Drai n-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS Temperatur e Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 660 - m V/°C Ga te-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS V GS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 25 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 2 50 Drain-S ource On-State Resistance RDS(on) V GS = 10 V I D = 5.5 A b - 0.8 -  Forward Tr ansconductance gfs VDS = 50 V, ID = 5.5 A 5.5 - - S Dynamic Input Capacitance C iss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1400 - pF Output Ca pacitance Coss - 180 - Reve rse Transfer Capacitance Crss -7 . 1- Output Capacitance Coss VGS = 0 V VDS = 1.0 V, f = 1.0 MHz - 1957 - VDS = 480 V, f = 1.0 MHz - 49 - Ef fective Output Capacitance Coss eff. VDS = 0 V to 480 V - 96 - Total Gate C harge Qg VGS = 10 V ID = 8.0A, V DS = 400 V see fig. 6 and 13 b -- 4 9 nC Gate-So urce Charge Qgs -- 1 3 Gate-Drain Charge Qgd -- 2 0 Turn-On Dela y Time td(on) VDD = 300 V, ID = 8.0 A Rg = 9.1 , RD = 35.5 , see fig. 10 b -1 3- nsRise Time tr -2 5- Turn-Off D elay Time td(off) -3 0- Fall T ime tf -2 2- Gate Input Resistance Rg f = 1 MHz, open drain 0.5 - 3.2  Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the  in tegral reverse p - n junction diode -- 9 . 2 A Pulsed Diode Forward Current a ISM -- 3 7 Body Dio de Voltage VSD TJ = 25 °C, IS = 8.0 A, VGS = 0 V b -- 1 . 5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs b - 530 800 ns Bo dy Diode Reverse Recovery Charge Q rr -3 . 0 4 . 4 μ C Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP5N60 A ll data sheet.ocm

ACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typi cal Output Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 0.1 100 0.1 1 10 100 20µs PULSE WI DTH T = 25 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.7V V , Drain-to-Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.7V 100 1 10 100 20µs PUL SE WIDTH T = 150 CJ ° TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.7V V , Drain-to -Source Voltage (V) I , Drain-to-Source Current (A) DS D 4.7V 0.1 100 V = 50V 20µs PULSE W IDTH DS V , Gate-to-Source Voltage (V) I , Drain-to-Source Current (A) GS D T = 25 CJ ° T = 150 CJ ° -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 8.0A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP5N60 A ll data sheet.ocm

Fig. 5 - Typic al Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 100 1000 10000 100000 1 10 100 1000 C, Capacita nce (pF) DSV , Drain -to-Source Voltage (V) A V = 0 V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd Ciss Coss Crss 0 10 20 30 40 50 Q , Total Ga te Charge (nC) V , Gate-to-Source Voltage (V) G GS FOR TEST CIRCUI T SEE FIGUR E I =D 9.2A V = 120VDS V = 300VDS V = 480VDS 400V 0.1 100 V ,Source-to -Drain Voltage (V) I , Reverse Drain Current (A) SD SD V = 0 V GS T = 25 CJ ° T = 150 CJ ° 0.1 100 1000 10 100 1000 10000 OPERAT ION IN THIS AREA LIMITED BY RDS(on) Single Pu lse T T = 150 C = 25 C° C V , Drain-to -Source Voltage (V) I , Drain Current (A)I , Drain Current (A) DS D 10us 100us 1ms 10ms E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP5N60 A ll data sheet.ocm

Fig. 9 - Maximum Drain C urrent vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 T , Case Te mperature ( C) I , Drain Current (A) D VDS Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10V - VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 0.01 0.1 Notes: 1. Duty fac tor D = t / t 2. Peak T =P x Z + T 1 2 J DM thJC C P t t DM t , Rectang ular Pulse Duration (s) Thermal Re sponse (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL R ESPONSE) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP5N60 A ll data sheet.ocm

Fig. 12a - Uncl amped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit RG IAS

0.01 Wtp

D.U.T. LVDS - VDD Driver A 15 V 20 V tp VDS IAS 25 50 75 100 125 150 100 200 300 400 500 600 Starting T , Junction Temperature ( C) E , Single P ulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 4.1A 5.8A 9.2A QG QGS QGD VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP5N60 A ll data sheet.ocm

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD

  • dV/dt controlled by Rg
  • Driver same type as D.U.T.
  • ISD controlled by duty factor “D”
  • D.U.T. - device under test D.U.T. Circuit layout considerations
  • Low stray inductance
  • Ground plane
  • Low leakage inductance current transformer R g Note a. VGS = 5 V for logic level devices VDD E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP5N60 A ll data sheet.ocm
  • M* = 0.0 52 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C DIM. MILLIMETERS INCHE S MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 Ø P 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP5N60 A ll data sheet.ocm

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP5N60 A ll data sheet.ocm