STP5950

STP5950 STANSON | Alldatasheet

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P Channel Enhancement Mode MOSFET -35.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP5950 2016 V1 DESCRIPTION STP5950 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power management and other battery circuits where high-side switching. PIN CONFIGURATION ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=80℃ ID -35.0 -33.0 A Pulsed Drain Current IDM -140 A Power Dissipation TA=25℃ PD 140 W Operation Junction Temperature TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 62 ℃/W FEATURE l -100V/-15A, RDS(ON) = 36mΩ (Typ.) @VGS = -10V l -100V/-10A, RDS(ON) = 40mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-220 package design

P Channel Enhancement Mode MOSFET -35.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP5950 2016 V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250mA -100 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -1.0 -2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-100V,VGS=0V -1 uA VDS=-80V,VGS=0V TJ=85℃ -10 Drain-source On-Resistance RDS(on) VGS=-10V,ID=-15A VGS=-4.5V,ID=-10A 36 40 45 55 mΩ Forward Transconductance gfs VDS=-30V,ID=-10A 21 S Diode Forward Voltage VSD IS=-1A,VGS=0V -1.0 V Dynamic Total Gate Charge Qg VDS=-50V VGS=-10V ID≡-10A 95 150 nC Gate-Source Charge Qgs 16 30 Gate-Drain Charge Qgd 13.8 26 Input Capacitance Ciss VDS =-25V VGS=0V F=1MHz 2800 3600 pF Output Capacitance Coss 1300 1700 Reverse TransferCapacitance Crss 320 420 Turn-On Time td(on) tr VDS=-50V RG= 25Ω ID=-5A 58 110 nS 24 50 Turn-Off Time td(off) tf 215 450 55 100

P Channel Enhancement Mode MOSFET -35.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP5950 2016 V1 TYPICALCHARACTERICTICS

P Channel Enhancement Mode MOSFET -35.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP5950 2016 V1 TYPICAL CHARACTERICTICS

P Channel Enhancement Mode MOSFET -35.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP5950 2016 V1 TO-220-3L PACKAGE OUTLINE