STP4435A VBSEMI | Alldatasheet

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Technical content

P-Channel 30-V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition T r e n c h F ET® Power MOSFET  100 % Rg Tested

APPLICATIONS

 Load Switch  Battery Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) - 30 0.018 at VGS = - 10 V - 9.0 13 nC 0.024 at VGS = - 4.5 V - 7.8 Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 95 °C/W. Based on TC = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 9.0 A TC = 70 °C - 7.2 TA = 25 °C - 7.0a, b TA = 70 °C - 5.6a, b Pulsed Drain Current IDM - 30 Continuous Source-Drain Diode Current TC = 25 °C IS - 3.5 TA = 25 °C - 2.1a, b Maximum Power Dissipation TC = 25 °C PD 4.2 WTC = 70 °C 2.7 TA = 25 °C 2.5a, b TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 40 50 °C/WMaximum Junction-to-Foot Steady State RthJF 24 30 S G D P-Channel MOSFET S S D D D S G D SO-8 Top View STP4435A A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Un it Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 31 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 10 V - 20 A Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs VDS = - 15 V, ID = - 7.0 A 18 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 1455 pFOutput Capacitance Coss 180 Reverse Transfer Capacitance Crss 145 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 7.0 A 25 38 nCVDS = - 15 V, VGS = - 4.5 V, ID = - 7.0 A 13 20 Gate-Source Charge Qgs 3.5 Gate-Drain Charge Qgd 5.5 Gate Resistance Rg f = 1 MHz 0.4 2.0 4.0 Ω Tur n-On Delay Tim e td(on) VDD = - 15 V, RL = 2.7 Ω ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω 10 20 ns Rise Time tr 13 20 Turn-Off DelayTime td(off) 23 35 Fall Time tf 91 8 Tur n-On Delay Time td(on) VDD = - 15 V, RL = 2.7 Ω ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω 38 57 Rise Time tr 89 134 Turn-Off DelayTime td(off) 22 33 Fall Time tf 11 17 Drain-Source Body Diode Characteristics Continous Source-Dr ain Diode Current I S TC = 25 °C - 6.5 APulse Diode Forward Current ISM - 30 Body Diode Voltage VSD IS = - 5.6 A, VGS = 0 V - 0.71 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C 22 33 ns Body Diode Reverse Recovery Charge Q rr 17 26 nC Reverse Recovery Fall Time ta 13 nsReverse Recovery Rise Time tb 9 STP4435A A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless othe rwise noted Output Characteristics On-Resistance vs. Drain Curre nt Gate Charge 012345 VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID VGS =1 0V thr u 4 V VGS =3 V VGS = 2V 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 5 10 15 20 25 30 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS =1 0V VGS =4 . 5V 048 12 16 20 24 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS ID =7A VDS =1 5 V VDS =2 4V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.8 1.6 2.4 3.2 4.0 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID TC = 25 °C TC = 125 °C TC = - 55 °C Crss 300 600 900 1200 1500 1800 0 6 12 18 24 30 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) VGS = - 4.5 V,I D =-7A VGS =-1 0 V,I D =-5 . 6A STP4435A A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 100 TJ = 150 °C VSD -S ource-to-Drain Voltage (V) - Source Current (A)IS TJ = 25 °C 1.1 1.3 1.5 1.7 1.9 2.1 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.01 0.02 0.03 0.04 0.05 04 8 12 16 20 - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =7A 0.001 0.01 0.1 1 10 100 Time (s) Power ( W) Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimu m VGS at which RDS(on) is specified 100 0.1 1 10 100 0.01 ID - Drain Current (A) 0.1 TA =2 5 ° C Single Pulse 100 ms 10 s DC Limited byR DS(on)* BVDSS Limited 10 ms 1m s STP4435A A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless othe rwise noted * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases w here additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 T C - Case Temperature (°C) ID - Drain Current (A) Power, Junction-to-Foot 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Derating, Junction-to-Ambient 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 T A -A mbient Temperature (°C) Power (W) STP4435A A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 75 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square WaveP ulse Du ration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse 0.02 0.05 STP4435A A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.15 0 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S STP4435A A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) STP4435A A ll data sheet.com

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