STP4435A STANSON | Alldatasheet
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P Channel Enhancement Mode MOSFET -10A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com Copyright © 2007, Stanson Corp.
DESCRIPTION
STP4435A is the P-Channel logic enhancemen t mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and other battery powered circuits. FEATURE z -30V/-9.2A, R DS(ON) = 22mΩ (Typ.) @VGS =-10V z -30V/-7.0A, RDS(ON) = 30mΩ @VGS = -4.5V z Super high density cell design for extremely low R DS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design PIN CONFIGURATION SOP-8 PART MARKING SOP-8 STP4435A 2007. V1
P Channel Enhancement Mode MOSFET -10A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP4435A 2007. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) T A=25℃ TA=70℃ ID -10.0 -7.0 A Pulsed Drain Current IDM -50 A Continuous Source Current (Diode Conduction) I S -2.3 A Power Dissipation TA=25℃ TA=70℃ PD 2.8 1.8 W Operation Junction Temperature TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 ℃/W
P Channel Enhancement Mode MOSFET -10A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP4435A 2007. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS VGS=0V,ID=-250uA -30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250 uA -1.0 -3.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA VDS=-30V,VGS=0V -1 Zero Gate Voltage Drain Current I DSS TJ=55℃ VDS=-30V,VGS=0V -5 uA On-State Drain Current ID(on) V DS=-5V,VGS=10V -40 A Drain-source On-Resistance RDS(on) VGS=-10V, ID=-9.2A VGS=-4.5V, ID=-7.0 0.022 0.030 Ω Forward Tran Conductance gfs VDS=-10V,ID=-9.0A 24 S Diode Forward Voltage VSD I S=-2.0A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 16 24 Gate-Source Charge Qgs 2.3 Gate-Drain Charge Qgd VDS=-15V,VGS=-10V ID≣-9.A 4.5 nC Input Capacitance Ciss 1650 Output Capacitance Coss 350 Reverse TransferCapacitance Crss VDS =-15V,VGS=0V f=1MHz 235 pF 16 30 Turn-On Time td(on) tr 17 30 65 110 Turn-Off Time td(off) tf VDD=15V,RL=15Ω ID=-1.0A,VGEN=-10V RG=6Ω 35 80 nS
P Channel Enhancement Mode MOSFET -10A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. TYPICAL CHARACTERICTICS (25℃ Unless Note) STP4435A 2007. V1
P Channel Enhancement Mode MOSFET -10A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. TYPICAL CHARACTERICTICS (25℃ Unless Note) STP4435A 2007. V1
P Channel Enhancement Mode MOSFET -10A SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STP4435A 2007. V1