STP4189D STANSON | Alldatasheet
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P Channel Enhancement Mode MOSFET D12.0A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com Copyright © 2009, Stanson Corp. STP4189D 2009. V1
DESCRIPTION
STP4189D is the PDChannel logic enhancement mode po wer field effect transistor which is produced using high cell density, DMOS tre nch technology. The STP413D has been designed specially to improve the overall effi ciency of DC/DC converters using either synchronous or conventional switching PWM co ntrollers. It has been optimized for low gate charge, low R DS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 PART MARKING Y: Year Code A: Week Date Q: Process Code FEATURE /circle6 D40V/D12.0A, R DS(ON) = 18mΩ (Typ.) @V GS = D10V /circle6 D40V/D8.0A, R DS(ON) = 24mΩ @V GS =D4.5V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional onDresistance and maximum DC current capability /circle6 TOD252,TOD251 package design
P Channel Enhancement Mode MOSFET D12.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP4189D 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit DrainDSource Voltage VDSS D40 V GateDSource Voltage VGSS ±20 V Pulsed Drain Current IDM D50 A Continuous Source Current (Diode Conduction) IS D20 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 52.5 31 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG D55/150 ℃ Thermal ResistanceDJunction to Ambient RθJA 50 ℃/W
P Channel Enhancement Mode MOSFET D12.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP4189D 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Uni t Static DrainDSource Breakdown Voltage V (BR)DSS V GS =0V,ID=D250uA D40 V Gate Threshold Voltage V GS(th) V DS =V GS ,ID=D250uA D1.0 D3.0 V Gate Leakage Current I GSS V DS =0V,V GS =±20V ±100 nA Zero Gate Voltage Drain Current I DSS VDS =D40V,V GS =0V D1 uA VDS =D40V,V GS =0V TJ=55℃ D5 DrainDsource OnD Resistance R DS(on) VGS =D10V,I D=D12A VGS =D4.5V,I D=D8A 29 mΩ Forward Transconductance gfs V DS =D5V,I D=D12A 23 S Diode Forward Voltage V SD I S=D1.0A,V GS =0V D1.2 V Dynamic Total Gate Charge Q g VDS =D10V,V DS =D20V ID=D12A 31.5 nC GateDSource Charge Q gs 7.8 GateDDrain Charge Q gd 6.5 Input Capacitance Ciss VDS =D20V,VGS=0V F=1MHz 1870 pF Output Capacitance Coss 185 Reverse TransferCapacitance C rss 155 TurnDOn Time td(on) tr VGS =D10V,VDS =D20V RL=1.6Ω,R GEN =3Ω nS TurnDOff Time td(off) tf
P Channel Enhancement Mode MOSFET D12.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP4189D 2009. V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET D12.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP4189D 2009. V1
P Channel Enhancement Mode MOSFET D12.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP4189D 2009. V1
P Channel Enhancement Mode MOSFET D12.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP4189D 2009. V1 GATE CHARGE TEST CIRCUIT & WAVEFORM TESISTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
P Channel Enhancement Mode MOSFET D12.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP4189D 2009. V1 UNCLAMPED INDUCTIVE SWITCHING (UIS) TEST CIRCUIT & WAVEFORMS DIODE TEC0VERY TEST CIRCUIT & WAVEFORMS
P Channel Enhancement Mode MOSFET D12.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP4189D 2009. V1 TO-252-2L PACKAGE OUTLINE SOP-8P