STP413D VBSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

FEATURES

  • TrenchFET® power MOSFET
  • Package with low thermal resist ance
  • 100 % Rg and UIS tested Notes a. Packag e l imited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) -40 RDS(on) () at VGS = -10 V 0.012 RDS(on) () at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unle ss otherwise noted) PARAMETER SYMBOL LIMIT UNIT Dr ain-Source Voltage VDS -40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a ID -50 A TC = 125 °C -39 Continuous Source Current (Diode Conduction) a IS -50 Pulsed Drain Current b IDM -200 Single Pulse Av alanche Current L = 0.1 mH IAS -40 Single Pulse Avalanc he Energy EAS 80 mJ Maximum Power D issipation b TA = 25 °C PD W TC = 25 °C 136 TC = 125 °C 45 Operating Junction and Stor age Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Am bient PCB Mount c RthJA 50 °C/WJunction-to-Case (Drain) RthJC 1.1 P-Channel 4 0 V (D-S) MOSFET TO-252 SG D Top View E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP413D A ll data sheet.com

a. Pulse test ; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subj ect to production testing. c. Independent of operating temperature. Stresses beyond those listed un der “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unle ss otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-S ource Breakdown Voltage VDS VGS = 0 V, ID = -250 μA -40 - - V Gate-Source Thr eshold Voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 - -2.5 Gate-Source Leakage IGSS V DS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = -40 V - - -1 μA VGS = 0 V V DS = -40 V, TJ = 125 °C - - -5 0 VGS = 0 V V DS = -40 V, TJ = 175 °C - - -15 0 On-S tate Drain Currenta I D(on) V GS = -10 V VDS  -5 V -50 - - A Drain-Source On-State R esistancea R DS(on) VGS = -10 V ID = -17 A - 0.012 0.014 VGS = -10 V I D = -50 A, TJ = 125 °C - - 0.017 VGS = -10 V I D = -50 A, TJ = 175 °C - - 0.020 VGS = -4.5 V I D = -14 A - 0.015 0.018 Forward Transconduc tancea gfs VDS = -15 V, ID = -17 A - 61 - S Dynamic b Input Capacitance Ciss VGS = 0 V V DS = -25 V, f = 1 MHz - 2872 3950 pF Output Ca pacitance Coss - 508 635 Rever se Transfer Capacitance Crss - 352 440 Total Gate Charge c Qg VGS = -10 V V DS = -30 V, ID = -50 A -6 0 8 0 nC Gate-Sou rce Charge c Qgs -5 . 7 8 . 6 Gate-Drain Charge c Qgd -1 4 . 7 2 2 Gate Resi stance Rg f = 1 MHz 1.5 3 4.5  Turn-On Delay T ime c td(on) VDD = -20 V, RL = 0.4  ID  -50 A, VGEN = -10 V, Rg = 1  -1 0 1 5 ns Rise Time c tr -1 2 1 8 Turn-Off De lay Time c td(off) -4 0 6 0 Fall Ti me c tf -1 6 2 4 Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM -- - 2 0 0 A Forwar d Voltage VSD IF = -50 A, VGS = 0 V - -1 -1.5 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP413D A ll data sheet.com

TERISTICS (TA = 25 °C, unless oth erwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge Transf er Characteristics Capacitance On-Resistance vs. Junction Temperature 100 VGS = 10 V thru 5 V 3 V VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 129631 5 4 V 0.00 0.01 0.02 0.03 0.05 0 2 04 06 08 0 1 0 ID - Drain Current (A) VGS = 4.5 V RDS(on) - On-Resistance () 0.04 VGS = 10 V VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = 50 A VDS = 20 V 50403020 0601 100 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 86421 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 1000 2000 3000 4000 5000 C iss Coss Crss 35 30 25 20 15 1054 0 0.5 0.8 1.1 1.4 1.7 2.0 175 VGS = 10 V ID = 30 A TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) - 50 150 125 100 75 50 250 - 25 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP413D A ll data sheet.com

TERISTICS (TA = 25 °C, unless oth erwise noted) Source Drain Diode Forward Voltage Threshold Volt age On-Resistance vs. Gate-to Source Voltage Transconductance Drain Source Breakdown vs. Junction Temperature VSD -- Source-to-Drain Voltage (V) IS - Source Current (A) 0.01 0.001 0.1 100 TJ = 25 °C TJ = 150 °C ID = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) - 0.4 0.5 0.8 1.1 ID = 5 mA - 50 - 25 150 125 100 75 50 25175 - 0.1 0.2 0.00 0.02 0.04 0.08 0.10 0 2468 1 0 TJ = 25 °C RDS(on) - On-Resistance () VGS - Gate-to-Source Voltage (V) TJ = 150 °C 0.06 100 120 0 2 04 06 08 0 1 0 ID - Drain Current (A) - Transconductance (S)gfs TC = - 55 °C 25 °C 125 °C - 50 - 48 - 46 - 44 - 42 - 40 - 50 - 25 0 25 50 75 100 125 150 175 ID = 10 mA TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP413D A ll data sheet.com

TERISTICS (TA = 25 °C, unless oth erwise noted) Safe Operating A rea Normalized Thermal Transient Impedance, Junction-to-Case 0.01 0.1 100 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is s ID - Drain Current (A) TC = 25 °C Single Pulse 100 µs BVDSS Limited 1 ms 10 ms 100 ms 1 s, 10 s, DC Limited by R *DS(on) ID Limited IDM Limited Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 Normalized Effectiv e Transient Thermal Impedance 0.2 0.1 0.05 Duty Cycle = 0.5 Single Pulse 0.02 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP413D A ll data sheet.com

al Transient Impedance, Junction-to-Ambient Note

  • The characteristics shown in the two graphs  - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 10 Normalized Effective Transient Ther mal Impedance 1000 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1001 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP413D A ll data sheet.com
  • Dimension L3 is for r e ference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MIN . MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T13-0592-Rev. A, 02-Sep-13 DWG: 6019 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP413D A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Return to Index E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP413D A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP413D A ll data sheet.com