STP413D STANSON | Alldatasheet

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P Channel Enhancement Mode MOSFET -12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP413D 2009. V1 DESCRIPTION STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 PART MARKING Y：Year Code A：Perduce Code Q：Process Code FEATURE l -40V/-12.0A, RDS(ON) = 36mΩ (Typ.) @VGS = -10V l -40V/-8.0A, RDS(ON) = 52mΩ @VGS =-4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252,TO-251 package design

P Channel Enhancement Mode MOSFET -12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP413D 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -12.0 -10.0 A Pulsed Drain Current IDM -30 A Continuous Source Current (Diode Conduction) IS -12 A Power Dissipation TA=25℃ TA=70℃ PD 50 25 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 60 ℃/W

P Channel Enhancement Mode MOSFET -12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP413D 2009. V1 6.9 nS 9 Turn-Off Time td(off) tf 44.8 41.2

P Channel Enhancement Mode MOSFET -12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP413D 2009. V1 TYPICAL CHARACTERICTICS

P Channel Enhancement Mode MOSFET -12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP413D 2009. V1 TYPICAL CHARACTERICTICS

P Channel Enhancement Mode MOSFET -12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP413D 2009. V1 TYPICAL CHARACTERICTICS

P Channel Enhancement Mode MOSFET -12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP413D 2009. V1 GATE CHARGE TEST CIRCUIT & WAVEFORM TESISTIVE SWITCHING TEST CIRCUIT & WAVEFORMS

P Channel Enhancement Mode MOSFET -12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP413D 2009. V1 UNCLAMPED INDUCTIVE SWITCHING (UIS) TEST CIRCUIT & WAVEFORMS DIODE TEC0VERY TEST CIRCUIT & WAVEFORMS

P Channel Enhancement Mode MOSFET -12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP413D 2009. V1 TO-252-2L PACKAGE OUTLINE SOP-8P

P Channel Enhancement Mode MOSFET -12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP413D 2009. V1 TO-251 PACKAGE OUTLINE SOP-8P