STP36NF06 VBSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition
  • Surface Mou nt
  • Available in Tape and Reel
  • Dynamic dV/dt Rating
  • Logic-Level Gate Drive
  • F a s t S w i t c h i n g
  • Compliant to RoHS Directive 2002/95/EC Notes a. Repetitive rating; pulse widt h limited by maximum ju nction temperature (see fig. 11). b. V DD = 25 V, starting TJ = 25 °C, L = 179 μH, Rg = 25 , IAS = 51 A (see fig. 12). c. I SD  51 A, dI/dt  250 A/μs, VDD  VDS, TJ  175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). f. Current limited by th e package, (die current = 51 A N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless ot herwise noted) PARAMETER SYMBOL LIMIT UNIT Drai n-Source Voltage VDS 60 V Gate-Source Voltage VGS ± Continuous Drain Currentf VGS at 10 V TC = 25 °C ID AContinuous Drain Current TC = 100 °C 36 Pulsed Drain Currenta IDM 200 Linear Derating Factor 1.0 W/°C Linear Derating Factor (PCB Mount)e 0.025 Single Pulse Avalanch e Energyb EAS 400 mJ Maximum Power Dissipatio n TC = 25 °C PD 150 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.7 Peak Diode R ecovery dV/dtc dV/dt 4.5 V/ns Operating Junction and Stor age Temperature Range TJ, Tstg - 55 to + 175 °C Solderin g Recommendations (Peak Temperature)d for 10 s 300d N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a, e Qg (Max) 0.024 at VGS = 10 V 50 66 nC0.028 at VGS = 4.5 V 40 T O-220AB Top View GD S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP36NF06 A ll data sheet.ocm

a. When mounted on 1" square PCB (F R-4 or G-10 material). Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Current limited by the pack age, (Die Current = 51 A). THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -6 2 °C/WMaximum Junction-to-Ambient (PCB Mount)a RthJA -4 0 Maximum Junction-to-Case (Drain ) RthJC -1 .0 SPECIFICATIONS (TJ = 25 °C, unless ot herwise noted) PARAMETER SYMBOL TEST CONDITION S MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Volt age VDS VGS = 0, ID = 250 μA 60 - - V VDS Temperature Coeffici ent VDS/TJ Reference to 25 °C, I D = 1 mA - 0.070 - V/°C Gate-Sour ce Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.5 V Gate-Source Leakage IGSS V GS = ± 10 V - - ± 100 nA Zero Ga te Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 μA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Sourc e On-State Resistance RDS(on) VGS = 10 V ID = 21 Ab - 24 VGS = 4.5 V ID = 15 A b - 28 Forward Transco nductance gfs VDS = 25 V, ID = 21A b 23 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1900 - pFOutput Capacitance Coss - Reverse Trans fer Capacitance Crss - Total Gate Charge Qg VGS = 5.0 V ID = 51 A, VDS = 48 V, see fig. 6 and 13b -- 6 6 nC Gate-Source Charge Qgs -- 1 2 Gate-Drain Charge Qgd -- 4 3 Turn-On Delay Time td(on) VDD = 30 V, ID = 51 A, Rg = 4.6 , RD = 0.56 , see fig. 10b -1 7- ns Rise Time tr - 230 - Turn-Off Delay T ime td(off) -4 2- Fall Time tf - 110 - Internal Drain Inducta nce LD Between lead, 6 mm (0.25") from package an d center of die contact -4 . 5- nH Internal Source Inductance LS -7 . 5- Drain-Source Body Diod e Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral re verse p - n junction diode -- 5 0 c A Pulsed Diode For ward Currenta ISM - - 200 Body Diod e Voltage VSD TJ = 25 °C, IS = 51 A, VGS = 0 Vb -- 2 . 5 V Body Diod e Reverse Recovery Time trr TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μsb - 130 180 ns Body Diode Reverse Recovery Charge Q rr - 0.84 1.3 μC Forward Turn-O n Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G 170 - 920 - E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP36NF06 A ll data sheet.ocm

ERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Ou tput Characteristics, TC = 25 °C Fig. 2 - Typical Output Ch aracteristics, TC = 150 °C Fig. 3 - Typical Transf er Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP36NF06 A ll data sheet.ocm

Fig. 5 - Typical Cap acitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP36NF06 A ll data sheet.ocm

Fig. 9 - Maximum Drain Curr ent vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS Rg D.U.T. 5 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP36NF06 A ll data sheet.ocm

Fig. 12a - Unclamped I nductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Rg IAS 0.01 Ωtp D.U.T. L VDS - VDD 5 V Vary tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge 5 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP36NF06 A ll data sheet.ocm

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer R g Note a. VGS = 5 V for logic level devices VDD E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP36NF06 A ll data sheet.ocm

  • M = 1.32 mm to 1.62 mm (dim ension inc l uding protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN. MAX. MIN. M AX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP36NF06 A ll data sheet.ocm

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP36NF06 A ll data sheet.ocm