STP3481 VBSEMI | Alldatasheet

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Technical content

P-Channel 30-V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Available  TrenchFET® Power MOSFET

APPLICATIONS

 Load Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 30 0.049 at VGS = - 10 V - 4.8 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 Notes: a. Based on T C = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 4.8 A TC = 70 °C - 4.1 TA = 25 °C - 4.0b, c TA = 70 °C - 3.5b, c Pulsed Drain Current IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C IS - 2.5 TA = 25 °C - 1.67b, c Maximum Power Dissipation TC = 25 °C PD 3.0 WTC = 70 °C 2.0 TA = 25 °C 2.0b, c TA = 70 °C 1.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 55 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 34 41 TSOP-6 Top View 2.85 mm 3 mm (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET STP3481 www.VBsemi.com g A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 31 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.5 - 2.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 10 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 4.1 A 0.049 ΩVGS = - 4.5 V, ID = - 1.0 A 0.054 Forward Transconductancea gfs VDS = - 15 V, ID = - 4.1 A 8S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 450 pFOutput Capacitance Coss 80 Reverse Transfer Capacitance Crss 63 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 4.1 A 10 15 nCVDS = - 15 V, VGS = - 4.5 V, ID = - 4.1 A 5.1 8 Gate-Source Charge Qgs 1.8 Gate-Drain Charge Qgd 2.5 Gate Resistance Rg f = 1 MHz 7 Ω Tur n-On Delay Time td(on) VDD = - 15 V, RL = 4.6 Ω ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 40 60 ns Rise Time tr 80 120 Turn-Off Delay Time td(off) 20 30 Fall Time tf 12 20 Tur n-On Delay Time td(on) VDD = - 15 V, RL = 4.6 Ω ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω 51 0 Rise Time tr 13 20 Turn-Off Delay Time td(off) 20 30 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 2.5 A Pulse Diode Forward Currenta ISM - 20 Body Diode Voltage VSD IS = - 3.3 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 3.3 A, di/dt = 100 A/µs, TJ = 25 °C 20 30 ns Body Diode Reverse Recovery Charge Qrr 20 30 nC Reverse Recovery Fall Time ta 14 ns Reverse Recovery Rise Time tb 6 www.VBsemi.com STP3481 g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) VGS = 10 thru 5 V VGS = 3 V VGS = 4 V VGS = 2 V 0.040 0.045 0.050 0.055 0.060 0.065 048 12 16 20 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 02468 10 12 ID = 4.1 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 24 V VDS = 15 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 012 34 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) TC = 125 °C TC = 25 °C TC = - 55 °C Crss 200 400 600 800 0 5 10 15 20 25 30 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) VGS = 10 V, ID = 4.1 V VGS = 4.5 V, ID = 4.1 A www.VBsemi.com STP3481 g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage TJ = 150 °C VSD - Source-to-Drain Voltage (V) IS - Source Current (A) 100 TJ = 25 °C 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA V (V)GS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.05 0.10 0.15 0.20 0.25 02468 10 - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 4.1 A Power ( W) Time (s) 10 10000.10.010.001 1001 Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 100 0.1 1 10 100 0.01 ID - Drain Current (A) 0.1 TA = 25 °C Single Pulse 1 ms 10 ms Limited by RDS(on)* BVDSS Limited 100 µs 100 ms DC 1s, 10 s www.VBsemi.com STP3481 g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) Power, Junction-to-Foot 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) www.VBsemi.com STP3481 g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 0.02 Single Pulse Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse 0.02 0.05 www.VBsemi.com STP3481 g A ll data sheet.com

L 5 4 R R C 0.15 M B A b C 0.08

0.17 Ref

-C- Seating Plane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 www.VBsemi.com STP3481 g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) Return to Index www.VBsemi.com STP3481 g A ll data sheet.com

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