STP33N10

STP33N10 VBSEMI | Alldatasheet

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N-Channel 100-V (D-S) MOSFET

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• TrenchFET ® Power MOSFETS  175 °C Jun c tion Temperature  Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω)I D (A) 100 0.0 at V GS = 10 V 45 0.0 at V GS = 4.5 V 40 D G S N-Channel MOSFET Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Li mit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID A TC = 125 °C 30 Pulsed Drain Current IDM Avalanche Current IAR 35 Repetitive Avalanche En ergya L = 0.1 mH EAR 61 mJ Maximum Po wer Dissipationa TC = 25 °C PD 127b W TA = 25 °Cc 3.75 Operating Junction and St orage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Lim it Unit Junction-to-Ambient (PCB Mount)c RthJA 40 °C/W Junction-to-Ca se (Drain) RthJC 1.4 Available RoHS* COMPLIANT35 T O-220AB Top View GDS 135 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP33N10 A ll data sheet.com

Notes: a. P ulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, un less otherwise noted Parameter Symbol T est Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VSS = 0 V, ID = 250 µA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate V oltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 80 V, VGS = 0 V, TJ = 125 °C 50 VDS = 80 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 75 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 5 A 0.032 Ω VGS = 4.5 V, ID = 3 A 0.0 VGS = 10 V, ID = 5 A, TJ = 125 °C 0.050 VGS = 10 V, ID = 3 A, TJ = 175 °C 0.065 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 10 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 2400 pFOutput Capacitance Coss 270 Reverse Transfe r Capacitance Crss 90 Total Gate Chargec Qg VDS = 50 V, VGS = 10 V, ID = 40 A 35 60 nCGate-S ource Chargec Qgs 11 Gate-Drain Chargec Qgd 9 Gate Resistan ce RG 1.7 Ω Tur n-On D elay Timec td(on) VDD = 50 V, RL = 1.25 Ω ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 11 20 nsRise Timec tr 12 20 Turn-Off Dela y Timec td(off) 30 45 Fall T imec tf 12 20 Source-Drain Diode Rating s and Characteristics TC = 25 °Cb Continuous Current IS 40 A Pulsed Current ISM 120 Forward Voltagea VSD IF = 30 A, VGS = 0 V 1.0 1.5 V Reve rse Recovery Time trr IF = 30 A, di/dt = 100 A/µs 60 100 ns Peak Re verse Recovery Current IRM(REC) 58A Reverse Recove ry Charge Qrr 0.15 0.4 µC E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP33N10 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless oth erwise noted Output Characteristics Tra nsconductance Capacitance 0 2468 1 0 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 5V - Drain Current (A)I D 4 V 100 0 1 53 04 56 0 7 5 - Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 700 1400 2100 2800 3500 0 2 04 06 08 0 1 0 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss Transfer Characteristics On-Resistan ce vs. Drain Current Gate Charge 0123456 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C - 55 °C TC = 125 °C 0.02 0.04 0.06 0.08 0.10 0 1 53 04 56 0 7 5 ID - Drain Current (A) VGS = 10 V - On-Resistance (Ω)rDS(on) VGS = 4.5V 0 1 02 03 04 0 5 06 07 0 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 50 V ID = 10 A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP33N10 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unle ss otherwise noted On-Resistance vs. Junction Temp erature Avalanche Current vs. Time (Normalized) - On-Resistance rDS(on) 0.0 0.4 0.8 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS = 10 V ID = 15 A tin (s) 1000 0.00001 0.001 0.1 1 0.1 (A) IDav 0.01 IAV (A) at TA = 150 °C 100 0.0001 IAV (A) at TA = 25 °C Source-Drain Diod e Forward Voltage Drain-Source Breakdown Voltage vs. Junction Temperature VSD - Source-to-Drain Voltage (V) - Source Current (A)IS 100 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C 100 105 110 115 120 125 130 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) ID = 10 mA Drain-Source Breakdown Voltage (V) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP33N10 A ll data sheet.com

vs. Case Temperature 0 25 50 75 100 125 150 175 TC - Ambient Temperature (°C) - Drain Current (A)I D Safe Operat ing Area 1000 0.1 1 10 1000 0.1 100 TC = 25 °C Single Pulse - Drain Current (A)I D 1 ms 10 ms DC, 100 ms 10 µs 100 µs 100 Limited by rDS(on)* VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 1 Normalized Effective Transient Ther mal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP33N10 A ll data sheet.com

• M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN . MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP33N10 A ll data sheet.com

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