STP30NS15LFP VBSEMI | Alldatasheet

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Technical content

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition
  • Surface Mou nt
  • Low-Profile Through-Hole
  • Available in Tape and Reel
  • Dynamic dV/dt Rating
  • 150 °C Operating Temperature
  • F a s t S w i t c h i n g
  • Fully Avalanche Rated
  • Compliant to RoHS Directive 2002/95/EC Notes a. Repetitive rating; pulse widt h limited by maximum ju nction temperature (see fig. 11). b. V DD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12). c. I SD 20 A, dI/dt  150 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 200 RDS(on) ()V GS = 10 V 0.058 Qg (Max.) (nC) 64 Qgs (nC) 12 Qgd (nC) 30 Configuration Singl e N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drai n-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID ATC = 100 °C 14 Pulsed Drain Currenta, e IDM 72 Linear Derating Factor 1.0 W/°C Single Pulse Avalanc he Energyb, e EAS 580 mJ Avalanche Currenta IAR 20 A Repetiitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD

42 W TA = 25 °C 13

ecovery dV/dtc, e dV/dt 5.0 V/ns Operating Junction and Storag e Temperature Range TJ, Tstg - 55 to + 150 °C Solder ing Recommendations (Peak Temperature) for 10 s 300d G D S TO-220 FULLPAK Top View N-Channel 200 V (D-S) MOSFET E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP30NS15LFP A ll data sheet.ocm

a. When mounted on 1" square PCB (FR-4 or G -10 material). Notes a. Repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Uses IRF640/SiHF640 data and test conditions. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mounted, S teady-State)a RthJA -4 0 °C/W Maximum Junction-to-Case (Drain ) RthJC -1 .0 SPECIFICATIONS (TJ = 25 °C, unless ot herwise noted) PARAMETER SYMBOL TEST CONDITION S MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Volt age VDS VGS = 0 V, ID = 250 μA 200 - - V VDS Temperature Coeffici ent VDS/TJ Reference to 25 °C, I D = 1 mAc -0 . 2 9- V / ° C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Sourc e Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V - - 25 μA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-Sta te Resistance RDS(on) V GS = 10 V ID = 11 Ab - 0.065 -  Forward Transc onductance gfs VDS = 50 V, ID = 11 Ad 6.7 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5d - 1300 - pFOutput Capacitance Coss - 430 - Reverse Transfer Capacitance Crss - 130 - Total Gate Charge Qg VGS = 10 V ID = 20 A, VDS = 160 V, see fig. 6 and 13b, c -- 7 0 nC Gate-Source Charge Qgs -- 1 3 Gate-Drain Charge Qgd -- 3 9 Turn-On Delay Time td(on) VDD = 100 V, ID = 20 A, Rg = 9.1 , RD = 5.4 , see fig. 10b, c -1 4- ns Rise Time tr -5 1- Turn-Off Delay T ime td(off) -4 5- Fall Time tf -3 6- Drain-Source Body Diod e Characteristics Continuous Source-Drain Diode Current I S MOSFET symbol showing the integral re verse p - n junction diode -- 2 0 A Pulsed Diode Forward Currenta ISM -- 7 2 Body Diode V oltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 Vb -- 2 . 0 V Body Diod e Reverse Recovery Time trr TJ = 25 °C, IF = 20 A, dI/dt = 100 A/μsb, c - 300 610 ns Body Diode Reverse Recovery Charge Q rr -3 . 4 7 . 1 μ C Forwa rd Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP30NS15LFP A ll data sheet.ocm

ERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Charac teristics, TJ = 25 °C Fig. 2 - Typical Outp ut Characteristics, TJ = 175 °C Fig. 3 - Typical Transf er Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 91037_01 Bottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width TC = 25 °C 4.5 V VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) 100 101 101 100 10-1 101 100 10-1 100 101 VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) Bottom Top VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width TC = 150 °C 91037_02 4.5 V 20 µs Pulse Width VDS = 50 V 101 100 10-1 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 5 6 789 1 04 25 °C 150 °C 91037_03 ID = 20 A VGS = 10 V 3.0 0.0 0.5 1.0 1.5 2.0 2.5 TJ, Junction Temperature (°C) RDS(on), Drain-to-Source On Resistance (Normalized) 91037_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP30NS15LFP A ll data sheet.ocm

Fig. 5 - Typical Cap acitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 3000 2500 2000 1500 500 1000 100 101 Capacitance (pF) VDS, Drain-to-Source Voltage (V) Ciss Crss Coss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 91037_05 QG, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) 0 15 75604530 VDS = 40 V VDS = 100 V For test circuit see figure 13 VDS = 160 V 91037_06 ID = 20 A 101 100 VSD, Source-to-Drain Voltage (V) ISD, Reverse Drain Current (A) 25 °C 150 °C VGS = 0 V 91037_07 1.50 10 µs 100 µs 1 ms 10 ms Operation in this area limited by RDS(on) VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) TC = 25 °C TJ = 150 °C Single Pulse 102 0.1 0.1 25 1022 5 103 91037_08 103 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP30NS15LFP A ll data sheet.ocm

Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case ID, Drain Current (A) TC, Case Temperature (°C) 25 1501251007550 91037_09 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS Rg D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf 0.1 10-2 10-5 10-4 10-3 10-2 0.1 1 10 PDM t1, Rectangular Pulse Duration (s) Thermal Response (ZthJC) Notes: 1. Duty Factor, D = t 1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 0 − 0.5 0.2 0.1 0.05 0.02 0.01 91037_11 10-3 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP30NS15LFP A ll data sheet.ocm

Fig. 12a - Unclamped I nductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit A Rg IAS 0.01 Ωtp D.U.T. LVDS - VDD Driver 15 V 20 V IAS VDS tp 1400 400 600 800 1000 1200 25 1501251007550 Starting TJ, Junction Temperature (°C) EAS, Single Pulse Energy (mJ) Bottom Top ID 8.0 A 11.0 A 20.0 A VDD = 50 V 91037_12c 200 QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP30NS15LFP A ll data sheet.ocm

Fig. 14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP30NS15LFP A ll data sheet.ocm

TO-220 FULLPAK (HIGH VOLTAGE) Notes 1. To be used only for process drawing. 2. These dimens ions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet C pk > 1.33. 4. All dimensions include bur rs and plating thickness. 5. No chipping or package da mage. E b n L e Ø P D c u V A MILLIMETERS INCHES A 4.570 4.830 0.180 0.190 A1 2.57 0 2.830 0.101 0.111 A2 2.510 2.850 0.099 0.112 b 0.622 0.890 0.024 0.035 b2 1.229 1.400 0.048 0.055 b3 1.229 1.400 0.048 0.055 c 0.440 0.629 0.017 0.025 D 8.650 9.800 0.341 0.386 d1 15.88 16.120 0.622 0.635 d3 12.300 12.920 0.484 0.509 E 10.360 10.630 0.408 0.419 e 2.54 BSC 0.100 BSC L 13.200 13.730 0.520 0.541 L1 3.100 3.500 0.122 0.138 n 6.050 6.150 0.238 0.242 Ø P 3.050 3.450 0.120 0.136 u 2.400 2.500 0.094 0.098 v 0.400 0.500 0.016 0.020 ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP30NS15LFP A ll data sheet.ocm

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP30NS15LFP A ll data sheet.ocm