STP30NF10 VBSEMI | Alldatasheet

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N-Channel 100-V (D-S) MOSFET

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  • TrenchFET ® Power MOSFETS  175 °C Jun ction Temperature  Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω)I D (A) 100 0.0 at V GS = 10 V 45 0.0 at V GS = 4.5 V 40 D G S N-Channel MOSFET Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derat ing. c. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TC = 25 °C , unless otherwise noted Parameter Symbo l Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID A TC = 125 °C 30 Pulsed Drain Cu rrent IDM Avalanche Curren t IAR 35 Repetitive Avalanche E nergya L = 0.1 mH EAR 61 mJ Maximum P ower Dissipationa TC = 25 °C PD 127b W TA = 25 °Cc 3.75 Operating Junction and S torage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Li mit Unit Junction-to-Ambient (PCB Mount)c RthJA 40 °C/W Juncti on-to-Case (Drain) RthJC 1.4 Available RoHS* COMPLIANT35 T O-220AB Top View GD S 135 STP30NF10 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Notes: Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond t hose listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symb ol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VSS = 0 V, ID = 250 µA 100 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Z ero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 80 V, VGS = 0 V, TJ = 125 °C 50 VDS = 80 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 75 A Drain-Source On-State Resista ncea rDS(on) VGS = 10 V, ID = 5 A 0.032 Ω VGS = 4.5 V, ID = 3 A 0.0 VGS = 10 V, ID = 5 A, TJ = 125 °C 0.050 VGS = 10 V, ID = 3 A, TJ = 175 °C 0.065 Forward Tra nsconductancea gfs VDS = 15 V, ID = 15 A 10 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz 2400 pFOutput Capacitance Coss 270 Reverse Transf er Capacitance Crss 90 Total Gate Chargec Qg VDS = 50 V, VGS = 10 V, ID = 40 A 35 6 nCGate-Source Chargec Qgs 11 Gate-Drain Chargec Qgd 9 Gate Resista nce RG 1.7 Ω Tur n-On Delay Timec td(on) VDD = 50 V, RL = 1.25 Ω ID ≅ 40 A, VGEN = 10 V, RG = 2.5 Ω 11 20 nsRise Timec tr 12 20 Turn -Off Delay Timec td(off) 30 45 Fall Timec tf 12 20 Source-Drain Diode Ratin gs and Characteristics TC = 25 °Cb Continuous Current IS 40 A Pulsed Current ISM 120 Forward Voltagea VSD IF = 30 A, VGS = 0 V 1.0 1.5 V Rev erse Recovery Time trr IF = 30 A, di/dt = 100 A/µs 60 100 ns Peak R everse Recovery Current IRM(REC) 58A Reverse Recov ery Charge Qrr 0.15 0.4 µC STP30NF10 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless o therwise noted Output Characteristics Tr ansconductance Capacitance 0 2468 1 0 VDS - Drain-to-Source Voltage (V) VGS = 10 thru 5V - Drain Current (A)I D 4 V 100 0 1 53 04 56 07 5 - Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 700 1400 2100 2800 3500 0 2 04 06 08 0 1 0 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss Transfer Characteristics On-Res istance vs. Drain Current Gate Charge 0123456 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C - 55 °C TC = 125 °C 0.02 0.04 0.06 0.08 0.10 0 1 53 04 56 07 5 ID - Drain Current (A) VGS = 10 V - On-Resistance (Ω)rDS(on) VGS = 4.5V 0 1 02 03 04 05 06 07 0 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 50 V ID = 10 A STP30NF10 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, un less otherwise noted On-Resistance vs. Junction Te mperature Avalanche Current vs. Time (Normalized) - On-Resistance rDS(on) 0.0 0.4 0.8 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature ( °C) VGS = 10 V ID = 15 A tin (s) 1000 0.00001 0.001 0.1 1 0.1 (A) IDav 0.01 IAV (A) at TA = 150 °C 100 0.0001 IAV (A) at TA = 25 °C Source-Drain Dio de Forward Voltage Drain-Source Breakdown Voltage vs. Junction Temperature VSD - Source-to-Drain Voltage (V) - Source Current (A)IS 100 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C 100 105 110 115 120 125 130 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature ( °C) ID = 10 mA Drain-Source Breakdown Voltage (V) STP30NF10 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

vs. Case Temperature 0 25 50 75 100 125 150 175 TC - Ambient Temperature ( °C) - Drain Current (A)I D Safe Oper ating Area 1000 0.1 1 10 1000 0.1 100 TC = 25 °C Single Pulse - Drain Current (A)I D 1 ms 10 ms DC, 100 ms 10 µs 100 µs 100 Limited by rDS(on)* VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified Normalized Thermal Transien t Impedance, Junction-to-Case Square Wave Pulse Dur ation (s) 0.1 0.01 10-4 10-3 10-2 10-1 1 Normalized Effective Tr ansient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 Single Pulse 0.05 0.02 STP30NF10 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

  • M = 1.32 mm to 1.62 mm (dim ension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES DIM. MIN . MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 STP30NF10 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. STP30NF10 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com