STP3052D STANSON | Alldatasheet
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P Channel Enhancement Mode MOSFET 325.0A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com Copyright © 2009, Stanson Corp. STP3052D 2009. V1
DESCRIPTION
STP3052D is the P3Channel logic enhancement mode po wer field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on3state resistance. These devices are particularly suited for low voltage app lication. Such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251 PART MARKING Y: Year Code A: Process Code FEATURE /circle6 330V/325.0A, R DS(ON) = 45mΩ (Typ.) @V GS = 310V /circle6 330V/316.0A, R DS(ON) = 78mΩ @V GS =35.0V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional on3resistance and maximum DC current capability /circle6 TO3252,TO3251 package design
P Channel Enhancement Mode MOSFET 325.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP3052D 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain3Source Voltage VDSS 330 V Gate3Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150 ℃) TA=25 ℃ TA=70 ℃ ID 325.0 318.0 A Pulsed Drain Current IDM 3100 A Continuous Source Current (Diode Conduction) IS 315 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 40 20 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG 355/150 ℃ Thermal Resistance3Junction to Ambient RθJA 105 ℃/W
P Channel Enhancement Mode MOSFET 325.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP3052D 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Uni t Static Drain3Source Breakdown Voltage V (BR)DSS V GS =0V,ID=3250uA 330 V Gate Threshold Voltage V GS(th) V DS =V GS ,ID=3250uA 31.0 33.0 V Gate Leakage Current I GSS V DS =0V,V GS =±20V ±100 nA VDS =340V,V GS =0V 31 Zero Gate Voltage Drain Current I DSS VDS =340V,V GS =0V TJ=55℃ 35 uA Drain3source On3 Resistance R DS(on) VGS =310V,I D=325A VGS =35.0V,I D=316A 85 mΩ Forward Transconductance gfs V DS =310V,I D=38A 8 S Diode Forward Voltage V SD I S=316A,V GS =0V 31.2 V Dynamic Total Gate Charge Q g 16.5 Gate3Source Charge Q gs 2.8 Gate3Drain Charge Q gd VDS =315V,V DS =3100V ID=33.5A 4.5 nC Input Capacitance Ciss 700 Output Capacitance Coss 129 Reverse TransferCapacitance C rss VDS =315V,VGS=0V F=1MHz pF Turn3On Time td(on) tr 26
70 Turn3Off Time td(off)
VDD=315V,RL=15Ω RGEN =310V,R G=6Ω ID≡-1.0A nS
P Channel Enhancement Mode MOSFET 325.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP3052D 2009. V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET 325.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP3052D 2009. V1 TYPICAL CHARACTERICTICS
P Channel Enhancement Mode MOSFET 325.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2009, Stanson Corp. STP3052D 2009. V1 TO-252-2L PACKAGE OUTLINE