STP11NM65N VBSEMI | Alldatasheet

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Technical content

FEATURES

  • Reduced trr, Qrr, and IRRM
  • Low figure-of-merit (FOM) Ron x Qg
  • Low input capacitance (Ciss)
  • Low switching losses due to reduced Qrr
  • Ultra low gate charge (Qg)
  • Avalanche energy rated (UIS) Notes a. Repetitive rating; puls e width limited by maximum junction temperature. b. V DD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A. c. 1.6 mm from case. d. I SD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C. PRODUCT SUMMARY VDS (V) at TJ max. 650 RDS(on) max. () at 25 °C V GS = 10 V 0.3 Qg max. (nC) 106 Qgs (nC) 14 Qgd (nC) 33 Configuration Single N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C ID ATC = 100 °C 16 Pulsed Drain Current a IDM 53 Linear Derating Factor 1.7 W/°C Single Pulse Avalanche Energy b EAS 367 mJ Maximum Power Dissipation PD 208 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Drain-Source Voltage Slope TJ = 125 °C dV/dt 37 V/nsReverse Diode dV/dt d 31 Soldering Recommendations (Peak Temperature) c for 10 s 300 °C N-Channel 650 V (D-S) MOSFET TO-220AB GDS www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 STP11NM65N A ll data sheet.ocm

a. C oss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. C oss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -6 2 °C/WMaximum Junction-to-Case (Drain) RthJC -0 .5 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 650 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA -0 . 6 7- V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2.5 - 4 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ± 1 μA Zero Gate Voltage Drain Current IDSS VDS =650 V, VGS = 0 V - - 1 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 11 A - 0.3  Forward Transconductance gfs VDS = 30 V, ID = 11 A - 7.0 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 4826 - pF Output Capacitance Coss - 456 Reverse Transfer Capacitance Crss - - Effective Output Capacitance, Energy Related a Co(er) VDS = 0 V to 520 V, VGS = 0 V -8 4- Effective Output Capacitance, Time Related b Co(tr) - 293 - Total Gate Charge Qg VGS = 10 V I D = 11 A, VDS = 520 V -7 1 nC Gate-Source Charge Qgs -1 4- Gate-Drain Charge Qgd -3 3- Turn-On Delay Time td(on) VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1  -2 2 nsRise Time tr -3 4 Turn-Off Delay Time td(off) -6 8 Fall Time tf -4 2 Gate Input Resistance Rg f = 1 MHz, open drain - 0.78 -  Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the  integral reverse p - n junction diode -- 2 1 A Pulsed Diod e Forward Current ISM -- 5 3 Diode Forward Voltage VSD TJ = 25 °C, IS = 11 A, VGS = 0 V - 0.9 1.2 V Reverse Recovery Time trr TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V - 160 - ns Reverse Recovery Charge Qrr -1 . 2- μ C Reverse Recovery Current IRRM -1 4-A S D G 210 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 STP11NM65N A ll data sheet.ocm

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 2 - Typi cal Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Coss and Eoss vs. VDS VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) TJ = 25 °CTOP 15 V 14 V 13 V 12 V 11 V 10 V 9 V 8 V 7 V 6 V 5 V 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) 01 0 2 0 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9 V 8 V 7 V 6 V 5 V TJ = 150 °C 51 5 2 5 3 0 VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) 01 0 2 5 51 5 2 0 TJ = 25 °C TJ = 150 °C VDS = 29.6 V TJ, Junction Temperature (°C) RDS(on), Drain-to-Source 2.5 0.5 - 60 1.5 - 40 - 20 0 20 40 60 80 100 120 140 160 VGS = 10 V ID = 11 A On Resistance (Normalized) VDS, Drain-to-Source Voltage (V) Capacitance (pF) 2400 1200 0 200 400 4800 3600 100 300 500 600 Ciss Coss Crss VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd ġ ġ ġ ġ ġ ġ 500 5000 0 100 200 300 400 500 600 Eoss (μJ) Coss (pF) VDS Coss Eoss www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 STP11NM65N A ll data sheet.ocm

Fig. 7 - Typical Gate Charge vs. Gate-to-So urce Voltage Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Safe Operating Area Fig. 10 - Maximum Drain Current vs. Case Temperature Fig. 11 - Temperature vs. Drain-to-Source Voltage Qg, Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) 0 60 120 30 90 VDS = 520 V VDS = 325 V VDS = 130 V 150 VSD, Source-Drain Voltage (V) ISD, Reverse Drain Current (A) 0.1 100 TJ = 150 °C TJ = 25 °C VGS = 0 V VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) * VGS > minimum VGS at which RDS(on) is specified IDM Limited BVDSS Limited 100 μs 1 ms 10 ms TC = 25 °C TJ = 150 °C Single Pulse Limited by RDS(on)* 0.01 0.1 100 1 10 100 1000 Operation in this Area Limited by RDS(on) TJ, Case Temperature (°C) ID, Drain Current (A) 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain-to-Source - 60 0 160 Breakdown Voltage (V) - 40 - 20 20 40 60 80 100 120 140 650 675 700 725 750 775 800 825 850 ID = 10 mA www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 STP11NM65N A ll data sheet.ocm

Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-C ase Fig. 13 - Switching Time Test Circuit Fig. 14 - Switching Time Waveforms Fig. 15 - Unclamped Inductive Test Circuit Fig. 16 - Unclamped Inductive Waveforms Fig. 17 - Basic Gate Charge Waveform Fig. 18 - Gate Charge Test Circuit 0.01 0.1 0.0001 0.001 0.01 0.1 1 Normalized Effective Transient Thermal Impedance Pulse Time (s) Duty Cycle = 0.5 0.2 0.1 0.02 Single Pulse 0.05 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % RD VGS RG D.U.T. 10 V VDS VDD VDS 90 % 10 % VGS td(on) tr td(off) tf RG IAS 0.01 Ωtp D.U.T L VDS - VDD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp QGS QGD QG VG Charge 10 V D.U.T. 3 mA VGS VDS IG ID 0.3 µF 0.2 µF 50 kΩ 12 V Current regulator Current sampling resistors Same type as D.U.T. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 STP11NM65N A ll data sheet.ocm

Fig. 19 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 Va ISD Driver gate drive D.U.T. lSD waveform D.U.T. VDS waveform Inductor current D = P.W. Period Peak Diode Recovery dV/dt Test Circuit VDD  dV/dt controlled by Rg  Driver same type as D.U.T.  ISD controlled by duty factor “D”  D.U.T. - device under test D.U.T. Circuit layout considerations  Low stray inductance  Ground plane  Low leakage inductance current transformer Rg Note a. VGS = 5 V for logic level devices VDD www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 STP11NM65N A ll data sheet.ocm

  • M = 1.32 mm to 1.62 mm (dim ension including protrusion) Heatsink hole for HVM 321 L L(1) D H(1) Q Ø P A F J(1) b(1) e(1) e E b C MILLIMETERS INCHES A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1 .73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 STP11NM65N A ll data sheet.ocm

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 STP11NM65N A ll data sheet.ocm