STP1013 STANSON | Alldatasheet
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Dual P Channel Enhancement Mode MOSFET p0.45A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com STP1013 2009. V1
DESCRIPTION
STP1013 is the PpChannel enhancement mode power fi eld effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize onpstate resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other better y powered circuits where highpside switching, low inpline power loss, and resistance to transients are needed. PIN CONFIGURATION SOT-523 / SC-89 PART MARKING FEATURE /circle6 p20V/p0.45A, R DS(ON) =520ohm /circle6 @V GS =p4.5V /circle6 p20V/p0.35A, R DS(ON) =700ohm /circle6 @V GS =p2.5V /circle6 p20V/p0.25A, R DS(ON) =950ohm /circle6 @VGS =p1.8V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional low onpresistance and maximum DC current capability /circle6 SOTp523 / SC89 package design
Dual P Channel Enhancement Mode MOSFET p0.45A STANSON TECHNOLOGY http://www.stansontech.com STP1013 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )℃ Parameter Symbol Typical Unit DrainpSource Voltage V DSS p20 V GatepSource Voltage V GSS ±12 V TA=25℃ p0.45 Continuous Drain Current J=150 )℃ TA=80℃ ID p0.35 A Pulsed Drain Current I DM p1.0 A Continuous Source Current (Diode Conduction) I S p0.3 A TA=25℃ 0.27 Power Dissipation T A=70℃ PD 0.16 W Operation Junction Temperature T J p55/150 Storage Temperature Range T STG p55/150
Dual P Channel Enhancement Mode MOSFET p0.45A STANSON TECHNOLOGY http://www.stansontech.com STP1013 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )℃ Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS DrainpSource Breakdown Voltage V (BR)DSS VGS =0V,I D=p250uA p20 V Gate Threshold Voltage V GS(th) VDS =V GS ,I D=p250uA p0.35 p0.8 V Gate Leakage Current I GSS VDS =0V,V GS =±12V ±100 nA VDS =20V,V GS =0V p1 Zero Gate Voltage Drain Current I DSS VDS =20V,V GS =0V TJ=55℃ uA OnpState Drain Current I D(on) VDS ≦p4.5V,V GS =p5V p0.7 A VGS =p4.5V,I D=p0.45A 420 520 VGS =p2.5V,I D=p0.35A 580 700 Drainpsource OnpResistance R DS(on) VGS =p1.8V,I D=p0.25A 750 950 mΩ Forward Transconductance g fs VDS =p10V,I D=p0.25A 0.4 S Diode Forward Voltage V SD IS=p0.15A,V GS =0V p0.8 p1.2 V DYNAMIC Total Gate Charge Qg 1.5 2.0 GatepSource Charge Q gs 0.3 GatepDrain Charge Q gd VDS =p10V,V GS =p4.5V, VDS=p0.6A 0.35 nC Td(on) 5 10 TurnpOn Time tr 15 25 Td(off) 8 15 TurnpOff Time tf VDD =p10V, RL=10Ω, ID=p0.4A, VGEN =p4.5V, RG=6Ω 1.4 1.8 nS
Dual P Channel Enhancement Mode MOSFET p0.45A STANSON TECHNOLOGY http://www.stansontech.com STP1013 2009. V1 TYPICAL CHARACTERICTICS
Dual P Channel Enhancement Mode MOSFET p0.45A STANSON TECHNOLOGY http://www.stansontech.com STP1013 2009. V1 TYPICAL CHARACTERICTICS
Dual P Channel Enhancement Mode MOSFET p0.45A STANSON TECHNOLOGY http://www.stansontech.com STP1013 2009. V1 SOT523 (SC-89) PACKAGE OUTLINE
Dual P Channel Enhancement Mode MOSFET p0.45A STANSON TECHNOLOGY http://www.stansontech.com STP1013 2009. V1