STN2610D STANSON | Alldatasheet
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N Channel Enhancement Mode MOSFET 50.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN2610D 2009. V1 DESCRIPTION STN2610D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO-252 TO-251 PART MARKING Y： Year Code A：Process Code B：Process Code FEATURE l 60V/10.0A, RDS(ON) = 10mΩ (Typ.) @VGS = 10V l 60V/8.0A, RDS(ON) = 12mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252, TO-251 package design
N Channel Enhancement Mode MOSFET 50.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN2610D 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 50.0 28.0 A Pulsed Drain Current IDM 180 A Continuous Source Current (Diode Conduction) IS 36 A Power Dissipation TA=25℃ TA=70℃ PD 63 0.5 W Operation Junction Temperature TJ 175 ℃ Storgae Temperature Range TSTG -55/155 ℃ Thermal Resistance-Junction to Ambient RθJA 62 ℃/W
N Channel Enhancement Mode MOSFET 50.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN2610D 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250mA 60 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1 2.5 V Gate Leakage Current IGSS VDS=0V,VGS=±20V 100 nA Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0V 1 uA VDS=48V,VGS=0V TJ=55℃ 5 9 18 nS 29 54 Turn-Off Time td(off) tf 45.3 86 11 21
N Channel Enhancement Mode MOSFET 50.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN2610D 2009. V1 TYPICAL CHARACTERICTICS
N Channel Enhancement Mode MOSFET 50.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN2610D 2009. V1 TYPICAL CHARACTERICTICS
N Channel Enhancement Mode MOSFET 50.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN2610D 2009. V1 TYPICAL CHARACTERICTICS
N Channel Enhancement Mode MOSFET 50.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN2610D 2009. V1 TO-252-2L PACKAGE OUTLINE