STN2018 STANSON | Alldatasheet
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N Channel Enhancement Mode MOSFET 10.0A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com Copyright © 2007, Stanson Corp STN2018 2013. V1
DESCRIPTION
STN2018 is the N-Channel logic enhancement mode pow er field effect transistors which are produced using high cell density DMOS tre nch technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low volta ge application, notbook computer power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 PART MARKING SOP-8 FEATURE 20V/10A, R DS(ON) = 10mΩ @VGS = 4.5V 20V/7A, R DS(ON) = 15mΩ @VGS = 2.5V Super high density cell design for extremely low R DS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design
N Channel Enhancement Mode MOSFET 10.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp STN2018 2013. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±12 V Continuous Drain Current (TJ=150 ℃) T A=25 ℃ TA=70 ℃ ID 10.0 8.0 A Pulsed Drain Current I DM 35 A Continuous Source Current (Diode Conduction) I S 2.3 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 2.5 1.6 W Operation Junction Temperature T J -55/150 ℃ Storgae Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 ℃/W
N Channel Enhancement Mode MOSFET 10.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp STN2018 2013. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS VGS =0V,I D=250uA 20 V Gate Threshold Voltage V GS(th) VDS =V GS ,I D=250 uA 0.6 1.4 V Gate Leakage Current I GSS VDS =0V,V GS =±12V ±100 nA VDS =20VGS =0V 1 Zero Gate Voltage Drain Current I DSS TJ=55 ℃ VDS =20VGS =0V 10 uA On-State Drain Current I D(on) VDS ≥5V,V GS =4.5 6 A Drain-source On-Resistance R DS(on) VGS =4.5 V, I D=10A VGS =2.5V, I D=7.0A 0.008 0.011 0.012 0.015 Ω Forward Tran Conductance gfs VDS =15.0V,I D=5.0A 30 S Diode Forward Voltage V SD I S=1.0A,V GS =0V 0.8 1.2 V Dynamic Total Gate Charge Q g 18 25 Gate-Source Charge Q gs 4.2 Gate-Drain Charge Q gd VDS =10V,V GS =4.5V ID=5.0A 6.8 nC Input Capacitance Ciss 850 Output Capacitance Coss 135 Reverse TransferCapacitance Crss VDS=10V,VGS=0V f=1MHz 105 pF 12 16 Turn-On Time td(on) tr 10 28 30 55 Turn-Off Time td(off) tf VDD =10V,R L=10 Ω ID=1.0A,V GEN =4.5V RG=6Ω 35 58 nS
N Channel Enhancement Mode MOSFET 10.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp STN2018 2013. V1 TYPICAL CHARACTERICTICS (25 ℃ Unless Note)
N Channel Enhancement Mode MOSFET 10.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp STN2018 2013. V1 TYPICAL CHARACTERICTICS (25 ℃ Unless Note)
N Channel Enhancement Mode MOSFET 10.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp STN2018 2013. V1 TYPICAL CHARACTERICTICS (25 ℃ Unless Note)
N Channel Enhancement Mode MOSFET 10.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp STN2018 2013. V1 SOP-8 PACKAGE OUTLINE