STN1A60 SEMIWELL | Alldatasheet

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Technical content

Features

◆ Repetitive Peak Off-State Voltage : 600/800V ◆ R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt General Description This device is suitable for low power AC switching applica- tion, phase control application such as fan speed and tem- perature modulation control, lighting control and static switching relay. 3.T2 2.Gate 1.T1 Symbol TO-92 SemiWell Semiconductor Bi-Directional Triode Thyristor

Electrical Characteristics

Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C -- 0 . 5 m A VTM Peak On-State Voltage IT = 1.5 A, Inst. Measurement -- 1 . 6 V GT1 I Gate Trigger Current VD = 6 V, RL=10 Ω -- 5 mA I - GT1 II -- 5 I - GT3 III -- 5 GT3 IV -7 1 2 GT1 I Gate Trigger Voltage VD = 6 V, RL=10 Ω -- 1 . 8 V GT1 II -- 1 . 8 GT3 III -- 1 . 8 GT3 IV -- 2 . 0 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 - - V (dv/dt)c Critical Rate of Rise Off- State Voltage at Commutation T J = 125 °C, [di/dt]c = -0.5 A/ms, VD=2/3 VDRM 2.0 - - V/㎲ IH Holding Current - 4.0 - mA Rth(j-c) Thermal Resistance Junction to case - - 50 °C/W Rth(j-a) Thermal Resistance Junction to Ambient - - 120 °C/W STN1A60/80

-50 0 50 100 150 0.1 VGT (t o V GT1 V GT1 V GT3 V GT3 VGT (25 o Junction Temperature [ o 60Hz 50Hz Surge On-State Current [A] Time (cycles) 100 110 120 130 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] 0.0 0.3 0.6 0.9 1.2 1.5 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] TJ = 125 o C TJ = 25 o C On-State Current [A] On-State Voltage [V] VGD(0.2V) 25 ℃ I GT3 IGM (0.5A) 25 ℃ I GT1 I GT1 I GT3 PG(AV) (0.1W) PGM (1W) VGM (6V) Gate Voltage [V] Gate Current [mA] Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle STN1A60/80

-50 0 50 100 150 0.1 IGT (t o IGT (25 o I GT3 I GT1 I GT1 I GT3 Junction Temperature [ o 100 1000 Rθ (J-C) Rθ (J-A) Transient Thermal Impedance [ o C/W] Time (sec) Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature Fig 9. Gate Trigger Characteristics Test Circuit A V 10Ω RG A V 10Ω RG A V 10Ω RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ A V 10Ω RG Test Procedure Ⅳ STN1A60/80

Dim. mm Inch A 4.2 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E 0.4 0.016 F 4.43 4.83 0.174 0.190 G 0.45 0.017 H2 . 5 4 0 . 1 0 0 I2 . 5 4 0 . 1 0 0 J 0.33 0.48 0.013 0.019 STN1A60/80 1. T1 2. Gate 3. T2 A B C G E F D H J I

Dim. mm Inch A 4.2 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E 0.4 0.016 F 4.43 4.83 0.174 0.190 G 0.45 0.017 H2 . 5 4 0 . 1 0 0 I2 . 5 4 0 . 1 0 0 J 0.33 0.48 0.013 0.019 K 4.5 5.5 0.177 0.216 L 7.8 8.2 0.295 0.323 M 1.8 2.2 0.070 0.086 N 1.3 1.7 0.051 0.067 1. T1 2. Gate 3. T2 STN1A60/80 A E G H C B D F I J K L M N