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£ Repetitive Peak Off-State Voltage : 600V £ R.M.S On-State Current ( IT(RMS)= 4 A ) £ Low On-State Voltage (1.6V(Typ.) @ ITM) General Description Standard gate triggering SCR is suitable for the application where requiring high bidirectio nal blocking voltage capability and also suitable for over voltage protection ,motor control cir- cuit in power tool,inrush current limit circuit and heating control system. 3. Gate 1. Cathode Symbol SemiWell Semiconductor Silicon Controlled Rectifiers D-PAK 2. Anode Preliminary
Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VAK = VDRM TC = 25 °C TC = 125 °C ȇ ȇ ȇ ȇ 200 ɵ VTM Peak On-State Voltage (1) ITM = 6 A tp = 380ɫ ȇ 1.6 V IGT Gate Trigger Current (2) VAK = 6 V(DC), RL=10 Ǯ TC = 25 °C ȇȇ 200 uA VGT Gate Trigger Voltage (2) VD =6 V(DC), RL=10 Ǯ TC = 25 °C ȇȇ 1.5 V VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ǯ TC = 125 °C 0.2 ȇȇ V dv/dt Critical Rate of Rise Off-State Voltage Linear slope up to VD = VDRM 67% Gate open TC = 125 °C 200 ȇȇ V/ɫ IH Holding Current IT = 100mA , Gate Open TC = 25 °C ȇ 100 -u A Rth(j-c) Thermal Impedance Junction to case ȇȇ 3.12 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ȇȇ 89 °C/W SCD4C60S Notes : 1. Pulse Width = 1.0 ms , Duty cycle 1% 2. RGK Current not Included in measurement