STP6A60 SEMIWELL | Alldatasheet
Document overview
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Technical content
Features
◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 6 A ) ◆ High Commutation dv/dt ◆ Non-isolated Type General Description This device is suitable for AC switching application, phase control application such as fan speed and temperature mod- ulation control, lighting control and static switching relay. 2.T2 3.Gate 1.T1 Symbol TO-220 STP6A60 SemiWell Semiconductor Bi-Directional Triode Thyristor 1 2 3 copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Electrical Characteristics
Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ── 1.0 mA VTM Peak On-State Voltage IT = 8 A, Inst. Measurement ─ ─ 1.5 V GT1 Ⅰ Gate Trigger Current VD = 6 V, RL=10 Ω ── 20 mAI - GT1 Ⅱ ── 20 I - GT3 Ⅲ ── 20 GT1 Ⅰ Gate Trigger Voltage VD = 6 V, RL=10 Ω ── 1.5 VV- GT1 Ⅱ ── 1.5 GT3 Ⅲ ── 1.5 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ── V (dv/dt)c Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -3.0 A/ms, VD=2/3 VDRM 5.0 ── V/㎲ IH Holding Current ─ 10 ─ mA Rth(j-c) Thermal Impedance Junction to case ── 2.8 °C/W STP6A60
θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] 125 o C o C On-State Current [A] On-State Voltage [V] 012345678 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] -50 0 50 100 150 0.1 V GT1 V GT1 VGT (t o V GT3 VGT (25 o Junction Temperature [ o 60Hz 50Hz Surge On-State Current [A] Time (cycles) VGD (0.2V) IGM (2A) 25 ℃ PG(AV) (0.3W) PGM (3W) VGM (10V) Gate Voltage [V] Gate Current [mA] Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle STP6A60
Transient Thermal Impedance [ o C/W] Time (sec) -50 0 50 100 150 0.1 I GT3 I GT1 I GT1 IGT (t o IGT (25 o Junction Temperature [ o Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature Fig 9. Gate Trigger Characteristics Test Circuit A V 10Ω RG A V 10Ω RG A V 10Ω RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ STP6A60
Dim. mm Inch A 9.7 10.1 0.382 0.398 B 6.3 6.7 0.248 0.264 C 9.0 9.47 0.354 0.373 D 12.8 13.3 0.504 0.524 E 1.2 1.4 0.047 0.055 F 1.7 0.067 G 2.5 0.098 H 3.0 3.4 0.118 0.134 I 1.25 1.4 0.049 0.055 J 2.4 2.7 0.094 0.106 K 5.0 5.15 0.197 0.203 L 2.2 2.6 0.087 0.102 M 1.25 1.55 0.049 0.061 N 0.45 0.6 0.018 0.024 O 0.6 1.0 0.024 0.039 φ 3.6 0.142 1. T1 2. T2 3. Gate A B C I G L M E F φH K N O J D