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◆( RDS(ON) (Max(5.0ohm(at(V GS (=(10V( ◆( Gate(Charge(((Typical(9.0nC)( ◆( Improve(dv/dt(capability,(Fast(switching( ◆( 100%(avalanche(Tested( General Description This( MOSFET( is( produced( using( advanced( planar( strip ( DMOS( technology.( This( latest( technology( has( been( especially( designed( to( minimize( onIstate( resistance( have( a( high(rugged(avalanche(characteristics.(These(device(are(well( suited( for( high( efficiency( switch( mode( power( supply( active( power(factor(correction.(Electronic(lamp(based(on(half(bridge( topology
Thermal(Characteristics( Symbol( Parameter( Ratings ( Unit( RθJC( ( Thermal(Resistance(Junction(to(Case( ( 5.3( ℃/W ( RθCS ( Thermal(Resistance(Case(to(Sink(Typ.( 0.5( ℃/W ( RθJA ( Thermal(Resistance(Junction(to(Ambient( 62.5( ℃/W ( Electrical(Characteristics(((TC(=(25 ℃ Unless(otherwise(noted)( Symbol( Items( Conditions( Ratings( Unit( Min ( Typ. ( Max ( BV DSS ( DrainISource(Breakdown(Voltage( V GS (=(0(V,(I D(=(250uA 600 ( ( ( V( ΔBV DSS( /ΔTJ( Breakdown( Voltage( Temperature( coefficient( ID(=250uA,(Reference(to(25 ℃ ( ( 0.7 ( ( V/ ℃( IDSS ( Zero(gate(voltage(Drain(Current( VDS (=(600V,(VGS (=(0V( ( ( 10( uA( IGSSF ( Gate(body(leakage(current(Forward( V GS (=(30V,(VDS (=(0V( ( ( 100( nA( IGSSR ( Gate(body(leakage(current(Reverse( V GS (=(I30V,(V DS (=(0V( ( ( I100 ( nA( On(Characteristics( VGS(th) ( Gate(Threshold(Voltage( VGS (=(V DS ,(I D(=(250uA ( 2.5( ( 4.5 ( V( RDS(ON) ( Static(DrainISource(OnIResistance( VGS (=(10V,(I D(=(3.5A ( ( 4.1 ( 5.0 ( Ω( Dynamic(Characteristics( Ciss ( Input(Capacitance( VDS (=(25(V,(V GS(=(0V( f(=(1.0MHz ( 200 ( ( pF( Coss ( output(Capacitance( ( 20( ( pF( Crss Reverse(Transfer(Capacitance( ( 4( ( pF(
Switching(Characteristics( Symbol( Items( Conditions( Min ( Typ. ( Max ( Units( td(on) ( TurnIon(Delay(Time( VDD (=(300V,(I D(=(2.0A( RG(=(25( Ω( (note(4,5) ( ( 10( ( ns( tr( TurnIon(Rise(Time( ( 25( ( ns( td(off) TurnIoff(Delay(Time( ( 25( ( ns( tf( TurnIoff(Fall(Time( ( 30( ( ns( Qg( Total(Gate(Charge( VDS (=(480V,(ID(=(2.0A( VGS (=(10V( (note(4,5) ( ( 9( ( nC( Qgs ( GateISource(Charge( ( 1.5 ( ( nC( Qgd ( GateIDrain(Charge( ( 4.0 ( ( nC( DrainISource(Diode(Characteristics( ( IS( Maximum(Continuous(DrainISource(diode(Forward(Curr ent ( ( 2.0 ( A( ISM ( Maximum(Pulse(DrainISource(diode(Forward(Current( ( ( 8.0 ( A( VSD DrainISource(diode(Forward(voltage( V GS (=(0V,(I s(=(2.0A( ( ( 1.4 ( V( trr ( Reverse(Recovery(Time( VGS (=(0V,(I s(=(2.0A( dl F/dt(=100(A/us( ( ( ( ( (note(4)( ( 230 ( ( nS( Qrr ( Reverse(Recovery(Charge( ( 1.0 ( ( uC( Notes( 1.( Repetitive(Rating(:(Pulse(width(limited(by(maximum(junction(temperature( 2.( L(=(60mH,(I AS (=(2.0A,(V DD (=(50V,(R G(=(25(Ω,(starting(T J(=(25 ℃( 3.( I SD (≤(2.0A,(di/dt(≤(200A/us,(V DD (≤(BV DSS (,(starting(T J(=(25 ℃( 4.( Pulse(Test(:(Pulse(width(≤(300us,(Duty(cycle(≤(2%( 5.( Essentially(independent(of(operation(temperature (
Fig.(1(OnIRegion(Characteristics( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( Fig.(2(OnIResistance(variation(vs(Drain(Current( ( ( ( ( ( ( ( Fig.(3(Breakdown(Voltage(Variation(vs( ( ( ( ( ( ( ( ( ( ( ( ( (Fig(4.(OnIResistance(Variation(vs(Temperature( ( ( ( ( ( Temperature( ( ( ( ( ( ( ( ( Fig.(5(Maximum(Safe(Operation(Area( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( Fig.(6(Maximum(Drain(Current(vs(Case(Temp.( 4/5(
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