STM2A60 SEMIWELL | Alldatasheet

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Technical content

Features

◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 2 A ) ◆ High Commutation dv/dt (3-Quadrant ) ◆ Surface Mount Package General Description This device is suitable for low power AC switching applica- tion, phase control application such as fan speed and tem- perature modulation control, lighting control and static switching relay. 2.T2 3.Gate 1.T1 Symbol SemiWell Semiconductor Bi-Directional Triode Thyristor copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Preliminary SOT-223

Electrical Characteristics

Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ── 0.5 mA VTM Peak On-State Voltage IT = 2.1 A, Inst. Measurement ── 1.6 V GT1 Ⅰ Gate Trigger Current VD = 6 V, RL=10 Ω ── 20 mAI - GT1 Ⅱ ── 20 I - GT3 Ⅲ ── 20 GT1 Ⅰ Gate Trigger Voltage VD = 6 V, RL=10 Ω ── 1.5 VV- GT1 Ⅱ ── 1.5 GT3 Ⅲ ── 1.5 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ── V dv/dt Critical Rate of Rise Off-State Voltage TJ = 125 °C, VD=2/3 VDRM exponential waveform, gate open circuit 1000 ── V/㎲ (dv/dt)c Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -0.75 A/ms, VD=2/3 VDRM 5.0 ── V/㎲ IH Holding Current ─ 5 ─ mA Rth(j-sp) Thermal Impedance Junction to solder point ── 15 °C/W Rth(j-a) Thermal Impedance (pcb mounted) Junction to Ambient(minimum footprint) ── 156 °C/W Junction to Ambient(pad area as in fig 11.) ── 70 °C/W STM2A60 ※ Notes : 1. Pulse Width ≤ 300us , Duty cycle ≤ 2%

-50 0 50 100 150 0.1 VGT (t o VGT (25 o Junction Temperature [ o 60Hz 50Hz Surge On-State Current [A] Time (cycles) 012345 100 110 120 130 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] 125 o C o C On-State Current [A] On-State Voltage [V] 25℃ PG(AV) = 0.5W PGK = 5W IGM=2A VGK = 5V VGD = 0.2V Gate Voltage [V] Gate Current [mA] STM2A60 Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle

Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature Fig 9. Gate Trigger Characteristics Test Circuit -50 0 50 100 150 0.1 I GT1 I GT1 I GT3 IGT (t o IGT (25 o Junction Temperature [ o Transient Thermal Impedance [ o C/W] Time (sec) A V 10Ω RG A V 10Ω RG A V 10Ω RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ

Dimensions in mm. Fig 10. Soldering pattern for surface mounting SOT-223 Fig 11. PCB for thermal resistance and power rating for SOT-223 (PCB; FR4 epoxy glass-1.6mm thick, copper laminate-35um thick) Dimensions in mm.

  1. T1 2. T2 3. Gate 4. T2 Dim. mm Inch A 1.80 0.071 A1 0.02 0.1 0.0008 0.004 e 2.3 0.090 e1 4.6 0.181 V1 0 ° M a x STM2A60