STN1810 STANSON | Alldatasheet
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N Channel Enhancement Mode MOSFET 8.0A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1
DESCRIPTION
STN1810 is the NpChannel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench te chnology. This high density process is especially tailored to minimize onpstate resistance and provide superior switching performance. These applications such as n otebook computer power management and other battery powered circuits where highpside switching, low inp line power loss and resistance to transients are melded. PIN CONFIGURATION SOP-8 PART MARKING Y: Year Code A: Process Code FEATURE /circle6 60V/8.0A, R DS(ON) = 140mΩ (Typ.) @V GS = 10V /circle6 60V/6.5.0A, R DS(ON) = 150mΩ @V GS = 7.0V /circle6 Super high density cell design for extremely low R DS(ON) /circle6 Exceptional onpresistance and maximum DC current capability /circle6 SOPp8 package design
N Channel Enhancement Mode MOSFET 8.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit DrainpSource Voltage VDSS 100 V GatepSource Voltage VGSS ±20 V Continuous Drain Current (TJ=150 ℃) TA=25 ℃ TA=70 ℃ ID 8.0 6.0 A Pulsed Drain Current IDM 12 A Continuous Source Current (Diode Conduction) IS 2.3 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 2.8 1.8 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG p55/150 ℃ Thermal ResistancepJunction to Ambient RθJA 80 ℃/W
N Channel Enhancement Mode MOSFET 8.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static DrainpSource Breakdown Voltage V (BR)DSS V GS =0V,ID=250uA 100 V Gate Threshold Voltage V GS(th) V DS =V GS ,ID=250uA 1.0 3.0 V Gate Leakage Current I GSS V DS =0V,V GS =±20V ±100 nA VDS =80V,V GS =0V 250 Zero Gate Voltage Drain Current I DSS VDS =80V,V GS =0V TJ=5℃ 5 uA OnpState Drain Current I D(on) VDS ≧5V,V GS =10V 8 A Drainpsource Onp Resistance R DS(on) VGS =10V,I D=10A VGS =7.0V,I D=6.5A 140 150 155 170 mΩ Forward Transconductance gfs V DS =5V,I D=6.2AV 5.6 S Diode Forward Voltage V SD I S=1A,V GS =0V 1.3 V Dynamic Total Gate Charge Q g 10 16 GatepSource Charge Q gs 2.5 GatepDrain Charge Q gd VDS =80V,V GS =5V ID≡5A 4.2 nC Input Capacitance Ciss 430 Output Capacitance Coss 58 Reverse TransferCapacitance C rss VDS =25V,VGS=0V F=1MHz pF 6.5 TurnpOn Time td(on) tr 10
13 TurnpOff Time td(off)
VDD =50V,R D=10Ω VDS=30V,RG=3.3Ω ID≡5A 3.4 nS
N Channel Enhancement Mode MOSFET 8.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 TYPICAL CHARACTERICTICS
N Channel Enhancement Mode MOSFET 8.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 TYPICAL CHARACTERICTICS
N Channel Enhancement Mode MOSFET 8.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 TYPICAL CHARACTERICTICS
N Channel Enhancement Mode MOSFET 8.0A STANSON TECHNOLOGY www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 PACKAGE OUTLINE SOP-8P