STN1304 STANSON | Alldatasheet
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N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com STN1304 2005. V1
DESCRIPTION
STN1304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resista nce.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, a nd low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-323 1.Gate 2.Source 3.Drain PART MARKING SOT-323 Y: Year Code A: Process Code FEATURE 20V/2.0A, R DS(ON) = 225mΩ @VGS = 4.5V 20V/1.5A, R DS(ON) = 315mΩ @VGS = 2.5V 20V/1.0A, R DS(ON) = 425mΩ @VGS = 4.5V Super high density cell design for extremely low R DS(ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design 1 2 D G S 1 2 04YA
N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY www.stansontech.com STN1304 2005. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage V DSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain CurrentTJ=150 ℃) TA=25 ℃ TA=70 ℃ ID 2.0 1.5 A Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) I S 1.6 A Power Dissipation TA=25 ℃ TA=70 ℃ PD 1.25 0.8 W Operation Junction Temperature T J 150 ℃ Storgae Temperature Range T STG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 105 ℃/W
N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY www.stansontech.com STN1304 2005. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 ℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS VGS =0V,I D=250uA 20 V Gate Threshold Voltage V GS(th) V DS =VGS,I D=250uA 0.35 1.0 V Gate Leakage Current I GSS VDS =0V,V GS =±12V ±100 nA VDS =20V,V GS =0V 1 Zero Gate Voltage Drain Current I DSS VDS =20V,V GS =0V TJ=55 ℃ 5 uA Drain-source On-Resistance R DS(on) VGS =4.5V,I D=2.0A VGS =2.5V,I D=1.5A VGS =1.8V,I D=1.0A 0.150 0.210 0.320 0.225 0.315 0.425 Ω Forward Transconductance g fs V DS =10V,I D=1.2A 10 S Diode Forward Voltage V SD I S=0.5A,V GS =0V 0.80 1.2 V Dynamic Total Gate Charge Q g 1.2 1.5 Gate-Source Charge Q gs 0.2 Gate-Drain Charge Q gd VDS =10V VGS =4.5V ID≡0.7A 0.3 nC Input Capacitance C iss 110 Output Capacitance C oss 34 Reverse Transfer Capacitance C rss VDS =10V VGS =0V F=1MH z 16 pF 5 10 Turn-On Time td(on) tr 8 15 10 18 Turn-Off Time td(off) tf VDD =10V RL=10 Ω ID=1.0A VGEN =4.5V RG=6 Ω 1.2 2.8 nS
N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY www.stansontech.com STN1304 2005. V1 TYPICAL CHARACTERICTICS (25 ℃ Unless noted)
N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY www.stansontech.com STN1304 2005. V1 TYPICAL CHARACTERICTICS (25 ℃ Unless noted)
N Channel Enhancement Mode MOSFET 2.0A STANSON TECHNOLOGY www.stansontech.com STN1304 2005. V1 SOT-323 PACKAGE OUTLINE