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Technical content

Features

◆ Repetitive Peak Off-State Voltage : 800V ◆ R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) General Description This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. This device is approved to comply with applicable require- ments by Underwriters Laboratories Inc. 2.T2 3.Gate 1.T1 Symbol STF12A80 SemiWell Semiconductor Bi-Directional Triode Thyristor copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. UL : E228720 TO-220F 2 3

Electrical Characteristics

Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ── 2.0 mA VTM Peak On-State Voltage IT = 20 A, Inst. Measurement ─ ─ 1.4 V GT1 Ⅰ Gate Trigger Current VD = 6 V, RL=10 Ω ── 30 mAI - GT1 Ⅱ ── 30 I - GT3 Ⅲ ── 30 GT1 Ⅰ Gate Trigger Voltage VD = 6 V, RL=10 Ω ── 1.5 VV- GT1 Ⅱ ── 1.5 GT3 Ⅲ ── 1.5 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ── V (dv/dt)c Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM 10 ── V/㎲ IH Holding Current ─ 20 ─ mA Rth(j-c) Thermal Impedance Junction to case ── 3.3 °C/W STF12A80

-50 0 50 100 150 0.1 V GT1 V GT1 VGT (t o C) V GT3 VGT (25 o Junction Temperature [ o 100 150 200 60Hz 50Hz Surge On-State Current [A] Time (cycles) 02468 1 0 1 2 1 4 100 110 120 130 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Allowable Case Temperature [ o RMS On-State Current [A] 02468 1 0 1 2 1 4 θ = 90 o θ = 150 o θ = 60 o θ = 30 o θ = 180 o θ = 120 o Power Dissipation [W] RMS On-State Current [A] TJ = 125 o C TJ = 25 o C On-State Current [A] On-State Voltage [V] VGD (0.2V) IGM (2A) 25 ℃ PG(AV) (0.5W) PGM (5W) VGM (10V) Gate Voltage [V] Gate Current [mA] Fig 1. Gate Characteristics Fig 2. On-State Voltage Fig 3. On State Current vs. Maximum Power Dissipation Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature θ θ 2π 360° π θ : Conduction Angle θ θ 2π 360° π θ : Conduction Angle STF12A80

-50 0 50 100 150 0.1 I GT3 I GT1 I GT1 IGT (t o IGT (25 o Junction Temperature [ o 0.1 Transient Thermal Impedance [ o C/W] Time (sec) Fig 8. Transient Thermal ImpedanceFig 7. Gate Trigger Current vs. Junction Temperature Fig 9. Gate Trigger Characteristics Test Circuit A V 10Ω RG A V 10Ω RG A V 10Ω RG Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ STF12A80

Dim. mm Inch A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 13.47 13.73 0.530 0.540 E 6.05 6.15 0.238 0.242 F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084 I 2.57 2.83 0.101 0.111 J2 . 5 4 0 . 1 0 0 K5 . 0 8 0 . 2 0 0 L 2.51 2.62 0.099 0.103 M 1.25 1.55 0.049 0.061 N 0.45 0.63 0.018 0.025 O 0.6 1.0 0.024 0.039 φ 3.7 0.146 φ 1 3.2 0.126 φ 2 1.5 0.059 1. T1 2. T2 3. Gate A B C I G L 1 M EF φ 1 H K N O J D φ 2 φ STF12A80

Dim. mm Inch A 10.4 10.6 0.409 0.417 B 6.18 6.44 0.243 0.254 C 9.55 9.81 0.376 0.386 D 8.4 8.66 0.331 0.341 E 6.05 6.15 0.238 0.242 F 1.26 1.36 0.050 0.054 G 3.17 3.43 0.125 0.135 H 1.87 2.13 0.074 0.084 I 2.57 2.83 0.101 0.111 J2 . 5 4 0 . 1 0 0 K5 . 0 8 0 . 2 0 0 L 2.51 2.62 0.099 0.103 M 1.25 1.55 0.049 0.061 N 0.45 0.63 0.018 0.025 O 0.6 1.0 0.024 0.039 P 5.0 0.197 φ 3.7 0.146 φ 1 3.2 0.126 φ 2 1.5 0.059 1. T1 2. T2 3. Gate A B C I G L 1 M EF φ 1 H K N O J D φ 2 φ P STF12A80