STD65N55LF3 VBSEMI | Alldatasheet
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N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
- TrenchFET® Power MOSFET
- Package with Low Ther mal Resistance
- 100 % Rg and UIS Tested Notes a. Packag e l imited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.0063 RDS(on) () at VGS = 4.5 V 0.0120 ID (A) 97 Configuration Single N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unle ss otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-So urce Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID A TC = 125 °C 56 Continuous Source Current (Diode Conduction)a IS 100 Pulsed Drain Currentb IDM 290 Single Pulse Av alanche Current L = 0.1 mH IAS 45 Single Pulse Avalanc he Energy EAS 101 mJ Maximum Power Dissipationb TC = 25 °C PD 136 W TC = 125 °C 45 Operating Junction and Stor age Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Am bient PCB Mountc RthJA 50 °C/W Junction-to-Case (Drain) RthJC 1.1 TO-252 SGD Top View E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD65N55LF3 A ll data sheet.ocm
a. Pulse tes t ; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subj ect to production testing. c. Independent of operating temperature. Stresses beyond those listed un der “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unle ss otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-S ource Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V Gate-Source Thr eshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 4.0 Gate-Source Leakage IGSS V DS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V - - 1 μA VGS = 0 V V DS = 60 V, TJ = 125 °C - - 50 VGS = 0 V V DS = 60 V, TJ = 175 °C - - 150 On-St ate Drain Currenta I D(on) V GS = 10 V VDS5 V 50 - - A Drain-Source On-State Re sistancea R DS(on) VGS = 10 V ID = 25 A - 0.0050 VGS = 10 V I D = 25 A, TJ = 125 °C - - 0.0117 VGS = 10 V I D = 25 A, TJ = 175 °C - - 0.0149 VGS = 4.5 V ID = 20 A - 0.0120 - Forward Transconduc tanceb gfs VDS = 15 V, ID = 25 A - 177 - S Dynamicb Input Capacitance Ciss VGS = 0 V V DS = 25 V, f = 1 MHz - 4844 6060 pF Output Capacitance Coss - 441 555 Rever se Transfer Capacitance Crss - 200 250 Total Gate Chargec Qg VGS = 10 V V DS = 30 V, ID = 50 A -8 2 1 2 5 nC Gate-So urce Chargec Qgs -1 4 . 5- Gate-Drain Chargec Qgd -1 3 . 5- Gate Resista nce Rg f = 1 MHz 1 2 3 Turn-On Delay T imec td(on) VDD = 30 V, RL = 0.6 ID 50 A, VGEN = 10 V, Rg = 1 -1 4 2 1 ns Rise Timec tr -5 8 Turn-Off Dela y Timec td(off) -4 1 6 2 Fall Ti mec tf -7 1 1 Source-Drain Di ode Ratings and Characteristicsb Pulsed Currenta ISM -- 2 9 0 A Forward V oltage VSD IF = 50 A, VGS = 0 V - 0.9 1.5 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD65N55LF3 A ll data sheet.ocm
TERISTICS (TA = 25 °C, unless oth erwise noted) Output Characteristics Transconductanc e Capacitance Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 128 160 0 2 4 6 8 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 5 V VGS = 4 V 140 210 280 350 0 10 20 30 40 50 gfs - Transconductanc e (S) ID - Drain Cu rrent (A) TC = 125 °C TC = - 55 °C TC = 25 °C 1600 3200 4800 6400 8000 0 12 24 36 48 60 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss 120 0 2 4 6 8 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = - 55 °C TC = 125 °C TC = 25 °C 0.000 0.003 0.006 0.009 0.0012 0.015 0 20 40 60 80 100 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = 50 A VDS = 30 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD65N55LF3 A ll data sheet.ocm
TERISTICS (TA = 25 °C, unless oth erwise noted) On-Resistance vs. Junctio n Temperature Source Drain Diode Forward Voltage Drain Source Breakdown vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 RDS(on) - On-Resistance (No rmalized) TJ - Junction Temperature (°C) ID = 25 A VGS = 4.5 V VGS = 10 V 0.001 0.01 0.1 100 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C - 50 - 25 0 25 50 75 100 125 150 175 VDS - Drain-to- Source Voltage (V) TJ - Junction Temperature (°C) ID = 1 mA 0.00 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 RDS(on) - On-Resistance (Ω VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C - 1.5 - 1.1 - 0. - 0.3 0.1 0.5 - 50 - 25 0 25 50 75 100 125 150 175 VGS(th) Variance (V) TJ - Temperature (°C) ID = 250 μA ID = 5 mA E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD65N55LF3 A ll data sheet.ocm
THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Safe Operating A rea Normalized Thermal Transient Impedance, Junction-to-Ambient 0.01 0.1 100 1000 0.01 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to- Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1 s, 10 s, DC Limited by RDS(on)* 1 ms IDM Limited TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 100 ms Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 10 Normalized Effective Transient Thermal Impedance 1000 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1001 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD65N55LF3 A ll data sheet.ocm
THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Ther mal Transient Impedance, Junction-to-Case Note
- The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 10 Normalized Effective Transient Thermal Impedance 100 0.2 0.1 Duty Cycle = 0.5 0.02 0.05 Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD65N55LF3 A ll data sheet.ocm
- Dimension L3 is fo r reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD65N55LF3 A ll data sheet.ocm
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