STD60N55F3 VBSEMI | Alldatasheet
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N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
- TrenchFET® Power MOSFET
- Package wi th Low Thermal Resistance
- 100 % Rg and UIS Teste d Notes a. Pac k age limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.0063 RDS(on) () at VGS = 4.5 V 0.0120 ID (A) 97 Configuration Single N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, u nless otherwise noted) PARAMETER SY MBOL LIMIT UNIT Dr ain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID A TC = 125 °C 56 Continuous Source Current (Diode Conduction)a IS 100 Pulsed Drai n Currentb IDM 290 Single Puls e Avalanche Current L = 0.1 mH IAS 45 Single Pulse A valanche Energy EAS 101 mJ Maximum Powe r Dissipationb TC = 25 °C PD 136 W TC = 125 °C 45 Operating Junction and S torage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE R ATINGS PARAMETER SYMBOL LIMIT UNI T Junction-to-Ambient PCB Mountc RthJA 50 °C/W Junction-to-Case (Drain) RthJC 1.1 TO-252 SGD Top View E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD60N55F3 A ll data sheet.ocm
a. Puls e te st; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subj ect to production testing. c. Independent of operating temperature. Stresses beyond those li sted under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, u nless otherwise noted) PARAMETER SYMB OL T EST CONDITIONS MIN. TYP. MAX. UNIT Static Drai n-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V Gate-Sou rce Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 4.0 Gate-Source Leakage IGSS V DS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V - - 1 μA VGS = 0 V V DS = 60 V, TJ = 125 °C - - 5 VGS = 0 V V DS = 60 V, TJ = 175 °C - - 1 On-State Drain Currenta I D(on) V GS = 10 V VDS5 V 50 - - A Drain-So urce On-State Resistancea R DS(on) VGS = 10 V ID = 25 A - 0.0050 VGS = 10 V I D = 25 A, TJ = 125 °C - - 0.0117 VGS = 10 V I D = 25 A, TJ = 175 °C - - 0.0149 VGS = 4.5 V ID = 20 A - 0.0120 - Forward Tr ansconductanceb gfs VDS = 15 V, ID = 25 A - 177 - S Dynamicb Input Capacitance Ciss VGS = 0 V V DS = 25 V, f = 1 MHz - 4844 6060 pF Output Ca pacitance Coss - 441 555 Rev erse Transfer Capacitance Crss - 200 250 Total Gate Chargec Qg VGS = 10 V V DS = 30 V, ID = 50 A -8 2 1 2 5 nC Ga te-Source Chargec Qgs -1 4 . 5- Gate-Drain Chargec Qgd -1 3 . 5- Gate Re sistance Rg f = 1 MHz 1 2 3 Turn-On De lay Timec td(on) VDD = 30 V, RL = 0.6 ID 50 A, VGEN = 10 V, Rg = 1 -1 4 2 1 ns Rise Ti mec tr -5 8 Turn-Off De lay Timec td(off) -4 1 6 2 Fall Timec tf -7 1 1 Source-Drai n Diode Ratings and Characteristicsb Pulsed Currenta ISM -- 2 9 0 A Forwa rd Voltage VSD IF = 50 A, VGS = 0 V - 0.9 1.5 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD60N55F3 A ll data sheet.ocm
ACTERISTICS (TA = 25 °C, unless o therwise noted) Output Characteristics Transconduc tance Capacitance Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 128 160 0 2 4 6 8 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 5 V VGS = 4 V 140 210 280 350 0 10 20 30 40 50 gfs - Transconduct ance (S) ID - Drain Current (A) TC = 125 °C TC = - 55 °C TC = 25 °C 1600 3200 4800 6400 8000 0 12 24 36 48 60 C - Capacitance (pF) VDS - Drain-to-Source V oltage (V) Ciss Coss Crss 120 0 2 4 6 8 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = - 55 °C TC = 125 °C TC = 25 °C 0.000 0.003 0.006 0.009 0.0012 0.015 0 20 40 60 80 100 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = 50 A VDS = 30 V E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD60N55F3 A ll data sheet.ocm
ACTERISTICS (TA = 25 °C, unless o therwise noted) On-Resistance vs . Junction Temperature Source Drain Diode Forward Voltage Drain Source Breakdown vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 RDS(on) - On-Resista nce (Normalized) TJ - Junction Temperature (°C) ID = 25 A VGS = 4.5 V VGS = 10 V 0.001 0.01 0.1 100 1.2 IS - Source Current (A) VSD - Source-to-Drain Vol tage (V) TJ = 25 °C TJ = 150 °C - 50 - 25 0 25 50 75 100 125 150 175 VDS - Drain-t o-Source Voltage (V) TJ - Junction Temperature (°C) ID = 1 mA 0.00 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 RDS(on) - On-Res istance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 150 °C TJ = 25 °C - 1.5 - 1.1 - 0.7 - 0.3 0.1 0.5 - 50 - 25 0 25 50 75 100 125 150 175 VGS(th) Variance (V) TJ - Temperature (°C) ID = 250 μA ID = 5 mA E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD60N55F3 A ll data sheet.ocm
THERMAL RATINGS (TA = 25 °C, un less otherwise noted) Safe Operati ng Area Normalized Thermal Transient Impedance, Junction-to-Ambient 0.01 0.1 100 1000 0.01 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-t o-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1 s, 10 s, DC Limited by RDS(on)* 1 ms IDM Limited TC = 25 °C Single Pu lse BVDSS Limited 10 ms 100 μs 100 ms Square Wave Pulse Dur ation (s) 0.1 0.01 10-4 10-3 10-2 10-1 10 Normalized Effective Tr ansient Thermal Impedance 1000 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1001 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD60N55F3 A ll data sheet.ocm
THERMAL RATINGS (TA = 25 °C, un less otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Case Note
- The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. Square Wave Pulse Dur ation (s) 0.1 0.01 10-4 10-3 10-2 10-1 10 Normalized Effective Tr ansient Thermal Impedance 100 0.2 0.1 Duty Cycle = 0.5 0.02 0.05 Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD60N55F3 A ll data sheet.ocm
- Dimensi on L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MIN. MAX. M I N. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STD60N55F3 A ll data sheet.ocm
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